Abstract:Isolated flat bands with significantly quenched kinetic energy of electrons could give rise to exotic strongly correlated states from electron-electron interactions. More intriguingly, the interplay between topology and flat bands can further lead to richer physical phenomena, which have attracted much interest. Here, taking advantage of the recently proposed intertwined Dirac states induced from the anisotropic coupling between the top and bottom surface states of an antiferromagnetic topological insulator thin film, we show the emergence of a high-Chern-number (quasi)flat-band state through moiré engineering of the surface states. Remarkably, the flat bands are isolated from other bands and located near the Fermi level. Furthermore, topological phase transitions between trivial and nontrivial flat-band states can be driven by tuning the out-of-plane electric field. Our work not only proposes a new scheme to realize high-Chern-number flat-band states, but also highlights the versatility of the intertwined Dirac-cone states.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to achieve a high - Chern - number quasi - flat - band state by twisting an antiferromagnetic topological insulator thin film, and to study the tunability and topological phase transitions of these states under the action of an external electric field. Specifically: 1. **Achieving a high - Chern - number quasi - flat - band**: The paper uses moiré engineering to induce a high - Chern - number quasi - flat - band state in an antiferromagnetic topological insulator thin film. These quasi - flat - bands have a significantly reduced electron kinetic energy, making electron - electron interactions dominant and thus potentially giving rise to exotic strongly - correlated states. 2. **Electric - field regulation**: The paper shows how to regulate the topological properties of these quasi - flat - bands by applying an electric field perpendicular to the thin film. Specifically, by adjusting the electric field, a topological phase transition from trivial ($C = 0$) to nontrivial ($C = 3$) can be achieved. 3. **New physical phenomena**: The paper also explores the physical behavior of these high - Chern - number quasi - flat - bands under different conditions, especially their behavior at small twist angles. Research shows that these quasi - flat - bands are almost flat near the Fermi level, which provides an ideal platform for studying strong - correlation effects. 4. **Theoretical model and experimental verification**: Based on an effective model analysis, the paper proposes a specific scheme for achieving a high - Chern - number quasi - flat - band, and discusses methods that may be experimentally achievable to reach this goal, such as using double - gate technology to apply and adjust the electric field. In summary, this paper aims to explore how to achieve a high - Chern - number quasi - flat - band by twisting an antiferromagnetic topological insulator thin film, and to study the tunability and topological phase transitions of these quasi - flat - bands under the action of an external electric field, providing a new experimental platform for studying strongly - correlated physics.

Electrically tunable high-Chern-number quasiflat bands in twisted antiferromagnetic topological insulators

Magnetic Moiré Surface States and Flat Chern Bands in Topological Insulators

Fractional Chern Insulators in Topological Flat Bands with Higher Chern Number

Tunable Band Topology Reflected By Fractional Quantum Hall States In Two-Dimensional Lattices

Chern insulators, van Hove singularities and topological flat bands in magic-angle twisted bilayer graphene

Topology and Interactions in a Frustrated Slab: Tuning from Weyl Semimetals to C>1 Fractional Chern Insulators.

Symmetry-driven anisotropic coupling effect in antiferromagnetic topological insulator: Mechanism for high-Chern-number quantum anomalous Hall state

Chern Bands with Higher-Order Van Hove Singularities on Topological Moiré Surface States

Symmetry-driven Anisotropic Coupling Effect in Antiferromagnetic Topological Insulator: Mechanism for a Quantum Anomalous Hall State with a High Chern Number

Generation of isolated flat bands with tunable numbers through Moiré engineering

Ferromagnetism and Topology of the Higher Flat Band in a Fractional Chern Insulator

Moiré Engineering and Topological Flat Bands in Twisted Orbital-Active Bilayers

Integer and fractional Chern insulators in twisted bilayer MoTe2

Intertwined Magnetism and Superconductivity in Isolated Correlated Flat Bands

Floquet-Engineered Topological Flat Bands in Irradiated Twisted Bilayer Graphene

Electric Control of a Canted-Antiferromagnetic Chern Insulator

Tunable Topological States in Stacked Chern Insulator Bilayers

Tunable Magnonic Chern Bands and Chiral Spin Currents in Magnetic Multilayers

Tunable Correlated Chern Insulator and Ferromagnetism in Trilayer Graphene/Boron Nitride Moiré Superlattice

Isolated nearly flat higher Chern band in monolayer transition metal trihalides

Gate-Tunable Topological Flat Bands in Trilayer Graphene-Boron Nitride Moiré Superlattices