Basic Properties of a New Nd-doped Laser Crystal: Nd:GdNbO4

Shoujun DING,Qingli ZHANG,Wenpeng LIU,Jianqiao LUO,Dunlu SUN
DOI: https://doi.org/10.1007/s12200-017-0715-7
2017-01-01
Frontiers of Optoelectronics
Abstract:A Nd-doped GdNbO4 single crystals have been grown successfully using the Czochralski technique. The chemical etching method was employed to study the defects in the structural morphology of Nd:GdNbO4 crystal with phosphoric acid etchant. Mechanical properties (such as hardness, yield strength, fracture toughness, and brittle index) of the as-grown crystal were systematically estimated on the basis of the Vickers hardness test for the first time. The transmission spectrum of Nd:GdNbO4 was measured in the wavelength range of 320–2400 nm at room temperature, and the absorption peaks were assigned. Results hold great significance for further research on Nd:GdNbO4.
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