Modulating the Internal Electric Field and Carrier Transfer of the Flexible ATF-ECDs by Inner NiOX Ionic Storage Layers

Zigan Yang,Jinhong Ye,Rui Wang,Hongbing Zhu,Kai Shen,Meixiu Wan,Yaohua Mai
DOI: https://doi.org/10.1016/j.mssp.2024.108286
IF: 4.1
2024-01-01
Materials Science in Semiconductor Processing
Abstract:In this study, modulating the internal electric field and carrier transfer of the flexible all-thin-film electrochromic devices (ATF-ECDs) for enhancing the device performance is carried out by tailoring thickness and morphology of the nickel oxide (NiOX) ionic storage layer. It is found that the charge density for flexible ATF-ECDs during electrochromic processes decreases with the NiOX thicknesses, which is related with the specific surface area of the sputtered NiOX and the internal electric field. Such a phenomenon is converse to the variation trend for the reported quasi-solid electrolyte based ECDs. The flexible ATF-ECDs with 97 nm and 155 nm thick NiOX layers perform excellent electrochromic performances including a high optical modulation of up to 68.6% and high coloration efficiencies. More details are deeply analyzed and discussed.
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