Intrinsic and Extrinsic Defect-Related Excitons in TMDCs

Kyrylo Greben,Sonakshi Arora,Moshe G. Harats,Kirill I. Bolotin
DOI: https://doi.org/10.1021/acs.nanolett.9b05323
IF: 10.8
2020-03-19
Nano Letters
Abstract:We investigate the excitonic peak associated with defects and disorder in low-temperature photoluminescence of monolayer transition metal dichalcogenides (TMDCs). To uncover the intrinsic origin of defect-related (D) excitons, we study their dependence on gate voltage, excitation power, and temperature in a prototypical TMDC monolayer MoS<sub>2</sub>. Our results suggest that D excitons are neutral excitons bound to ionized donor levels, likely related to sulfur vacancies, with a density of 7 × 10<sup>11</sup> cm<sup>–2</sup>. To study the extrinsic contribution to D excitons, we controllably deposit oxygen molecules <i>in situ</i> onto the surface of MoS<sub>2</sub> kept at cryogenic temperature. We find that, in addition to trivial p-doping of 3 × 10<sup>12</sup> cm<sup>–2</sup>, oxygen affects the D excitons, likely by functionalizing the defect sites. Combined, our results uncover the origin of D excitons, suggest an approach to track the functionalization of TMDCs, to benchmark device quality, and pave the way toward exciton engineering in hybrid organic–inorganic TMDC devices.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
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