Abstract:Magnetoresistance (MR) sensors provide cost‐effective solutions for diverse industrial and consumer applications, including emerging fields such as internet‐of‐things (IoT), artificial intelligence, and smart living. Commercially available MR sensors such as anisotropic magnetoresistance (AMR) sensors, giant magnetoresistance (GMR) sensors, and tunnel magnetoresistance (TMR) sensors typically require an appropriate magnetic bias for both output linearization and noise suppression, resulting in increased structural complexity and manufacturing cost. Here, an all‐in‐one spin Hall magnetoresistance (SMR) sensor with built‐in AC excitation and rectification detection is demonstrated, which effectively eliminates the requirements of any linearization and domain stabilization mechanisms separated from the active sensing layer. This is made possible by the coexistence of SMR and spin–orbit torque (SOT) in ultrathin NiFe/Pt bilayers. Despite the simplest possible structure, the fabricated Wheatstone bridge sensor exhibits essentially zero DC offset, negligible hysteresis, and a detectivity of around 1 nT Hz−1/2 at 1 Hz. In addition, it also shows an angle dependence to external field similar to those of GMR and TMR, though it does not have any reference layer (unlike GMR and TMR). The superior performances of SMR sensors are evidently demonstrated in the proof‐of‐concept experiments on rotation angle measurement, and vibration and finger motion detection. An all‐in‐one spin Hall magnetic sensor that features simplest structure, nearly zero DC offset, negligible hysteresis, and low noise based on AC excitation is demonstrated. A few proof‐of‐concept potential applications including angle, vibration, and finger movement detection are demonstrated. The work opens new possibilities for further exploitation of spin–orbit torque technology in a wide range of applications.

Using Peacock Shape Anisotropic Magnetoresistance (AMR) and Ni Mushroom Array to Achieve Tri-Axis Magnetic Sensor

Ni mushroom array to enhance out-of-plane magnetic field sensitivity of anisotropic magnetoresistance sensor

By Varying The Distance Of Ni Flux-Guide For Out-Of-Plane Magnetic Field Sensitivity Enhancement Of Amr Sensor

On the influence of magnetic flux guide location to the out-of-plane magnetic field sensing of chip-scale AMR sensor

Monolithic integration of micro magnetic pillar array with anisotropic magneto-resistive (AMR) structure for out-of-plane magnetic field detection

Development of a Compliant Magnetic 3-D Tactile Sensor with AMR Elements.

Three-dimensional AMRMEMS (Anisotropic Magneto Resistive Micro-Electro-Mechanical System) three-axis magnetometer structure and magnetometer

A high-sensitive anisotropic magnetoresistive sensor based on hybrid Ta/NiFe/Ta/Al multilayer structure

A 3-Axis Miniature Magnetic Sensor Based on a Planar Fluxgate Magnetometer with an Orthogonal Fluxguide

A New Magnetic Sensor Based on Giant Magneto- impedance Effect of Fe-based Amorphous Wire

Angular Position Sensor Based on Anisotropic Magnetoresistive and Anomalous Nernst Effect

Design and Application of MEMS-Based Hall Sensor Array for Magnetic Field Mapping

2D magnetic field sensing array using face-shear mode PMN-PT/Metglas composite

A 1D Magnetoelectric Sensor Array for Magnetic Sketching

Development of CMOS-MEMS in-plane magnetic coils for application as a three-axis resonant magnetic sensor

An out-of-plane electromagnetic induction based resonant MEMS magnetometer

Ultrathin All-in-One Spin Hall Magnetic Sensor with Built-In AC Excitation Enabled by Spin Current

Design of Gmi Micro-Magnetic Sensor Based on Co-Based Amorphous Alloys for Space Applications

Three-dimensional Mapping of the Anisotropic Magnetoresistance in Fe3O4 Single Crystal Thin Films

Design and Measurement of Microelectromechanical Three-Axis Magnetic Field Sensors Based on the CMOS Technique