A symmetrical fully-integrated CMOS doherty power amplifier

Samira Ebazadeh,Masoud Meghdadi,Ali Medi
DOI: https://doi.org/10.1016/j.mejo.2024.106188
IF: 1.992
2024-04-10
Microelectronics Journal
Abstract:This paper presents a new method to enhance the efficiency of a symmetrical doherty power amplifier (DPA) by fully utilizing the current driving capability of a class-C biased peaking amplifier. In this method, with utilization of the passive voltage gain concept, the input matching networks are designed in a way that the peaking path experiences a higher voltage gain than the carrier path, at high powers. As a result, the higher drive voltage of the peaking amplifier compensates for its lower gate bias and identical peak output currents for both amplifiers can be achieved. For demonstration purpose, a two-stage symmetrical DPA with a power utilization factor (PUF) of about unity is designed and fabricated in a standard 0.18- μm CMOS technology. The measurement results at 2.6 GHz show a power gain of 21 dB and an 1 dB compression point of 21.3 dBm. The peak power added efficiency (PAE) is 35% and the PAE at 6 dB power back-off (PBO) is better than 23%.
engineering, electrical & electronic,nanoscience & nanotechnology
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