Abstract:The study demonstrates highly electron‐doped multi‐monolayer 2H‐MoS2 through planar organic ion intercalation (1‐ethyl‐3‐methylimidazolium, EMIM+), maintaining a direct bandgap with high photoluminescence intensity, and stable valley polarization up to room temperature for future applications of valleytronics and spintronics. Monolayer (1L) group VI transition metal dichalcogenides (TMDs) exhibit broken inversion symmetry and strong spin‐orbit coupling, offering promising applications in optoelectronics and valleytronics. Despite their direct bandgap, high absorption coefficient, and spin‐valley locking in K or K' valleys, the ultra‐short valley lifetime limits their room‐temperature applications. In contrast, multilayer TMDs, with more absorptive layers, sacrifice the direct bandgap and valley polarization upon gaining inversion symmetry from the bilayer structure. It is demonstrated that multilayer molybdenum disulfide (MoS2) can maintain 1) a structure with broken inversion symmetry and strong spin‐orbit coupling, 2) a direct bandgap with high photoluminescence (PL) intensity, and 3) stable valley polarization up to room temperature. Through the intercalation of organic 1‐ethyl‐3‐methylimidazolium (EMIM+) ions, multilayer MoS2 not only exhibits layer decoupling but also benefits from an electron doping effect. This results in a hundredfold increase in PL intensity and stable valley polarization, achieving 55% and 16% degrees of valley polarization at 3 K and room temperature, respectively. The persistent valley polarization at room temperature, due to interlayer decoupling and trion dominance facilitated by a gate‐free method, opens up potential applications in valley‐selective optoelectronics and valley transistors.

Robust Enhancement of Valley Polarization and Quantum Yield in Composition Grading Lateral Heterostructure of Mos2-Ws2 Monolayer

Enhanced Valley Polarization in WS2/LaMnO3 Heterostructure

Enhanced Valley Polarization of Bilayer MoSe2 with Variable Stacking Order and Interlayer Coupling

Interface Engineering Modulated Valley Polarization in MoS2/hBN Heterostructure

Ultrafast Investigation of Room Temperature Valley Polarization in “optical Bilayer” WS 2

Modulation of Valley Dynamics in Hybrid H/T Phase Monolayer WSe2

Valley-selective Circular Dichroism of Monolayer Molybdenum Disulphide

Enhancement of Room-Temperature Photoluminescence and Valley Polarization of Monolayer and Bilayer WS2 Via Chiral Plasmonic Coupling.

Engineering Valley Polarization of Monolayer WS2: A Physical Doping Approach

Valley polarization in MoS 2 monolayers by optical pumping

Realization of Valley Polarization in Monolayer WS2 Via 3d Transition Metal Atom Adsorption

Observation of Strong Valley Magnetic Response in Monolayer Transition Metal Dichalcogenide Alloys of Mo0.5W0.5Se2 and Mo0.5W0.5Se2/WS2 Heterostructures

Ultrafast modulation of valley dynamics in multiple WS2 − Ag gratings strong coupling system

Large Valley Polarization In Monolayer Mote2 On A Magnetic Substrate

Giant and tunable valley degeneracy splitting in MoTe2

Unveiling exceptionally robust valley contrast in AA- and AB-stacked bilayer WS 2 .

Indirect‐To‐Direct Bandgap Crossover and Room‐Temperature Valley Polarization of Multilayer MoS2 Achieved by Electrochemical Intercalation

Manipulating Valley-Polarized Photoluminescence of MoS2 Monolayer at off Resonance Wavelength with a Double-Resonance Strategy

Enhanced valley polarization in WSe2/YIG heterostructures via interfacial magnetic exchange effect

Tuning the valley depolarization dynamics in selenium and vanadium alloyed monolayer

Enhancement of Valley Polarization in Monolayer WSe2 Coupled with Microsphere‐Cavity‐Array