Enhanced Spin-Orbit-Torque Efficiency in W-Co20Fe60B20 Multilayers by Insertion of an IrxMn1-x or PtxMn1-x Layer

Qingtao Xia,Junda Qu,Tianren Luo,Dandan Zhang,Jin Cui,Houyi Cheng,Kewen Shi,Huaiwen Yang,Xueying Zhang,Qiang Li,Sylvain Eimer,Cong Wang,Dapeng Zhu,Weisheng Zhao
DOI: https://doi.org/10.1103/physrevapplied.21.014016
IF: 4.6
2024-01-01
Physical Review Applied
Abstract:Spin-orbit torque (SOT) has great potential application for developing next-generation magnetic random-access memory (MRAM). For efficient utilization of the SOT MRAM, most efforts have been focused on reducing power consumption by improving the SOT efficiency. Here, we report that inserting an ultrathin IrxMn1-x (or PtxMn1-x) layer at the heavy-metal-ferromagnet interface is an effective strategy to increase the SOT efficiency. By performing spin-torque ferromagnetic magnetic resonance and second-harmonic Hall measurements, we found that the absolute values of the charge-to-spin conversion efficiency increase from 0.09 for annealed W-Co20Fe60B20 (CFB) sample to 0.15 for annealed W-IrxMn1-x-CFB sample. The enhancement of the SOT efficiency can be attributed to the reduction of interfacial spin-memory loss at the annealed W-IrxMn1-x (or PtxMn1-x)-CFB samples. Moreover, currentdriven magnetization switching with a reduced critical current density has been achieved in the annealed W-IrxMn1-x-CFB samples. This study highlights the significant roles of the IrxMn1-x (or PtxMn1-x) insertion layer on improving the SOT efficiency and provides a strategy to improve the SOT efficiency through nanoengineering of the IrxMn1-x (or PtxMn1-x) insertion layer for energy-efficient SOT devices.
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