Resonant Magneto-Optic Kerr Effect in the Magnetic Topological Insulatorcr:(Sbx,bi1−x)2

Shreyas Patankar,James P. Hinton,J. Griesmar,Joseph Orenstein,J. Steven Dodge,Xufeng Kou,Lei Pan,Kang L. Wang,Andrew Bestwick,Eli Fox,David Goldhaber‐Gordon,Jing Wang,Shou Cheng Zhang
DOI: https://doi.org/10.1103/physrevb.92.214440
2015-01-01
Abstract:We report measurements of the polar Kerr effect, proportional to the out-of-plane component of the magnetization, in thin films of the magnetically doped topological insulator $(\text{Cr}_{0.12}\text{Bi}_{0.26}\text{Sb}_{0.62})_2\text{Te}_3$. Measurements of the complex Kerr angle, $\Theta_K$, were performed as a function of photon energy in the range $0.8\text{ eV}<\hbar\omega<3.0\text{ eV}$. We observed a peak in the real part of $\Theta_K(\omega)$ and zero crossing in the imaginary part that we attribute to resonant interaction with a spin-orbit avoided crossing located $\approx$ 1.6 eV above the Fermi energy. The resonant enhancement allows measurement of the temperature and magnetic field dependence of $\Theta_K$ in the ultrathin film limit, $d\geq2$ quintuple layers. We find a sharp transition to zero remanent magnetization at 6 K for $d<8$~QL, consistent with theories of the dependence of impurity spin interactions on film thickness and their location relative to topological insulator surfaces.
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