Abstract: Carbon nanotubes (CNTs) exhibit a great prospect as a nanoscale building block for future nanoelectronics due to their unique one-dimensional nanostructure and properties [1]. To explore their potential in various domains, an essential prerequisite is to build reliable interconnections between the CNTs and the external electrical circuits and mechanical systems. To address this need, various chemical and physical processes have been explored to build such interconnections. For example, Burghard et al. reported “controlled adsorption of CNTs on chemically modified electrodes” for interconnection of CNTs [2,3]. However, a stronger bonding instead of a weak chemical adsorption is mandatory for constructing reliable nanodevices. Ruoff et al. showed that focused electron beam in a scanning electron microscope (SEM) can be used to deposit a small amount of hydrocarbon contamination so as to attach nanotubes on an AFM tip [4, 5]. Such a “spot welding” technique has also been used for connecting CNTs and polysilicon surface electrically and mechanically [6]. Madsen et al. presented an in situ method for highly conductive attachment of multiwalled carbon nanotubes (MWCNTs) onto microelectrodes by depositing a gold–carbon composite using a focused electron beam system [7]. Although robust contacts can be obtained by the these methods, limited access to a focused electron beam system and the small-scale spot-treatment nature prevent their large-scale industrial applications. To meet the needs of future large-scale applications, simpler, less capital intensive and more scalable processes are highly desirable. In this chapter, we introduce a novel ultrasonic nanowelding process, with which one can fabricate reliable bonding between single-wall carbon nanotubes (SWCNTs) and metal electrodes. Contacts formed by the present process are found to have low contact resistance and good long-term stability and mechanical strength. A low resistance of around 15 k Ω for a 1- µm-long metallic SWCNT at room temperature can be achieved. After nanowelding, the effective Schottky barrier height between semiconducting SWCNT and Ti electrode is as low as ~6:6 meV in the ON-state and the barrier width is ~0:9 nm at Vg = 0. The performance of the CNT field-effect transistors (FETs) fabricated by this method has also been demonstrated to have greatly improved.

Ultrasonic Nanowelding of Carbon Nanotubes to Metal Electrodes

Corrections to “zinc Oxide Nanostructures and High Electron Mobility Nanocomposite Thin Film Transistors” [nov 08 3001-3011

Ultrasonic Nanowelding Technology Between Carbon Nanotubes and Metal Electrodes

Corrigendum to “A Method for Creating Reliable and Low-Resistance Contacts Between Carbon Nanotubes and Microelectrodes” [carbon 45 (2007) 436–442]

Ultrasonic Nanowelding of Carbon Nanotubes to Metal Electrodes

Improvement of Carbon Nanotube Field Emission Properties by Ultrasonic Nanowelding

Intermetallic Nanocrystals: Syntheses and Catalytic Applications

CorrigendumCorrigendum to “improving the Synthesis of Single-Walled Carbon Nanotubes by Pulsed Arc Discharge in Air by Preheating the Catalysts” [carbon 46 (2008) 1819–1822]

Correction to Nb Doping and Alloying of 2D WS2 by Atomic Layer Deposition for 2D Transition Metal Dichalcogenide Transistors and HER Electrocatalysts

Erratum: “Synthesis, characterization and ferroelectric properties of lead-free K0.5Na0.5NbO3 nanotube arrays” [J. Appl. Phys. 109, 114104 (2011)]

Effects of Welding Head on the Carbon Nanotube Field Emission in Ultrasonic Nanowelding

Correction: Enhanced field emission stability of vertically aligned carbon nanotubes through anchoring for X-ray imaging applications

Contact Configuration Modification at Carbon Nanotube-Metal Interface During Nanowelding

Decrease of contact resistance at the interface of carbon nanotube/electrode by nanowelding

Corrigendum: Copper induced hollow carbon nanospheres by arc discharge method: controlled synthesis and formation mechanism (2016 Nanotechnology 27 335602)

Microstructure and mechanical properties of underwater friction stir welding of CNT/Al-Cu-Mg composites

A Combined Top‐down and Bottom‐up Approach for Precise Placement of Metal Nanoparticles on Silicon

Nanorobotic Spot Welding by Attogram Precision Metal Deposition from Copper-filled Carbon Nanotubes.

10.1063/1.5084134.2

Correction: CoPt/CeO2catalysts for the Growth of Narrow Diameter Semiconducting Single-Walled Carbon Nanotubes

Tailoring The Intrinsic Metallic States Of Double-Walled Nanotube Films By Self-Soldered Laser Welding