Abstract:In the present paper, to fabricate electroluminescent devices CdSe QDs were used as active materials, TPD (N,N'-biphenyl-N,N'-bis-(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine) was used as a hole transport layer, and ZnS was used as an electron transport layer. The electroluminescent properties of the organic/inorganic composite ITO/TPD/CdSe QDs/ZnS/Ag light emitting devices were studied. Both TPD and CdSe QDs thin films were spin-coated and ZnS thin films were deposited by magnetron sputtering. The surfaces of the devices are smooth. The luminescence (EL) peak of the CdSe QDs is at 580 nm which is assigned to the band-edge exciton emission. Compared to the previous EL device of ITO/ZnS/CdSe QDs/ZnS/Ag, it is seen that the new devices do not display surface state related emission peaks and EL intensity is about 10 folds that of the previous device. The enhancement of luminescence efficiency is attributed to both of the excitation of CdSe QDs by accelerated electron collision and carriers injection into QDs: (1) electrons are accelerated by the ZnS layer and collide with CdSe QDs, which excites electrons in QDs to excited states and allows them to emit photons; (2) the holes injected into QDs recombine with some of electrons excited in the QDs. The authors further studied the influence of thickness variation of ZnS on the luminescent properties. ZnS thin films are of 80, 120, and 160 nm thickness, respectively. It was found that as the thickness of ZnS increases the threshold voltage rises and EL intensity increases, but breakdown voltage decreases. The EL peak position blue shifts when the thickness of ZnS decreases. The explanation of underlying mechanism is given.

The Research on the EL Characteristics of ZnS:TmF_3 TFEL Devices

[Influence of Parameters of ZnS Film on the Organic/inorganic Composite Luminescence Devices].

Effect of Solution Concentrations on Crystal Structure, Surface Topographies and Photoluminescence Properties of ZnO Thin Films

A Novel Structure Of Zns : Tm3+ Tfel Device

Color‐tunable and White Emission of Tm3+ Doped Transparent Zinc Silicate Glass‐ceramics Embedding ZnO Nanocrystals

High Fluorescence Rate of Thermally Activated Delayed Fluorescence Emitters for Efficient and Stable Blue OLEDs

Electroluminescence From Doped Zns Nanocrystals Polymer Composite Systems

Effect of the Thickness of Zn(BTZ)_2 Layer on the Electroluminescent Spectra of White Organic Light-emitting Devices

The influence of the concentration of Er3+ ions on the characteristics of AC-electroluminescence in ZnS:ErF3 thin films

Pyrazine-Based Blue Thermally Activated Delayed Fluorescence Materials: Combine Small Singlet–Triplet Splitting with Large Fluorescence Rate

Luminescence Properties And Energy Transfer Of Ce3+,Tb3+-Coactivated-Sialon Phosphors

Effect of the Thickness of Zn（BTZ）; Layer on the Electroluminescent Spectra of White Organic Light-emitting Devices

Blue-green Emitting ZnS0.75O0.25: Ce3+, X%tb3+ Phosphor with Tunable Fluorescence Lifetime

Qd-Led Devices Using Znsno As an Electron-Transporting Layer

AC Electroluminescence of ZnS : Tm

Preparation, Characterization and Electroluminescence of ZnSnanocrystals in a Polymer Matrix

Blue Electroluminescent Al2O3/Tm2O3 Nanolaminate Films Fabricated by Atomic Layer Deposition on Silicon

Low-voltage thin-film electroluminescent devices with low-resistivity stacked insulators

High performance pure blue organic fluorescent electroluminescent devices by utilizing a traditional electron transport material as the emitter

Electroluminescence Based On A Beta-Diketonate Ternary Samarium Complex

Electroluminescence from ZnS/CdS nanocrystals/polymer composite