PREPARATION OF ORGANIC SEMICONDUCTOR PTCDA ANDSTUDIES ON ITS STRUCTURE INDICATION AND SPECIFICPROPERTY OF LIGHT ABSORPTION

Fuji Zhang,Qi Liu
1999-01-01
Abstract:By strictly controling the cooling and heating rate for reactor and using generoushot deionized water to rinse the deposition, the high purity organic semiconductor material 3, 4, 9, 10 perylenetetracarboxylic dianhydride (PTCDA) was preparde with rawmaterial 1. 8-naphthalic anhydride. Sublimated in vacuum, the purity of PTCDA washigher than 99% by analyzing purity with Varian high efficiency liquid phase colormetricspectrum. The measurement and analysis of HP5988A type mass spectrum of the sample is located at 392, which is consistent with the molecular weight of PTCDA* Themeasurement and analysis of the infrared absorption spectrum of the sample show it hasanhydried and benzene base. The hydrogen atom's ascription was analyzed by nuclearmagnetic resonance spectrum. X-ray diffraction spectrum shows PTCDA is monoclinicand its thin film deposition is preferred orientation. The analysis of the visible absorption spectrum shows that the absortion edge exists between 560~410um which is located at the blue and green range. At the same time obvious exciton atsorption peak existsand the exciton band gap is 0.8eV, For 540nm wave, the relative absorption Intensitycan be about 78%. For 500nm wave, the relative absorption intensity decreases to50%. With the decrease of the incident wavelength, the relative intensity decreases linearly. For visible wave length larger than 570urn, it is transparent.
What problem does this paper attempt to address?