Abstract:N,N'-Bis(4-trifluoromethoxyphenyl) naphthalene-1,4,5,8-tetracarboxylic acid diimide (NDI-POCF3) and N,N'-bis(4-trifluoromethoxybenzyl) naphthalene-1,4,5,8-tetracarboxylic acid diimide (NDI-BOCF3) have similar optical and electrochemical properties with a deep LUMO level of approximately 4.2 eV, but exhibit significant differences in electron mobility and molecular packing. NDI-POCF3 exhibits nondetectable charge mobility. Interestingly, NDI-BOCF3 shows air-stable electron transfer performance with enhanced mobility by increasing the deposition temperature onto the octadecyltrichlorosilane (OTS)-modified SiO2/Si substrates and achieves electron mobility as high as 0.7 cm(2) V(-1) s(-1) in air. The different mobilities of those two materials can be explained by several factors including thin-film morphology and crystallinity. In contrast to the poor thin-film morphology and crystallinity of NDI-POCF3, NDI-BOCF3 exhibits larger grain sizes and improved crystallinities due to the higher deposition temperature. In addition, the theoretical calculated transfer integrals of the intermolecular lowest unoccupied molecular orbital (LUMO) of the two materials further show that a large intermolecular orbital overlap of NDI-BOCF3 can transfer electron more efficiently than NDI-POCF3 in thin-film transistors. On the basis of fact that the theoretical calculations are consistent with the experimental results, it can be concluded that the p-(trifluoromethoxy) benzyl (BOCF3) molecular architecture on the former position of the naphthalene tetracarboxylic diimides (NDI) core provides a more effective way to enhance the intermolecular electron transfer property than the p-(trifluoromethoxy) phenyl (POCF3) group for the future design of NDI-related air-stable n-channel semiconductor.

Influence of fluorination position on aggregate structure and electron transport of perylene diimide derivatives

Air Stable N-Channel Organic Semiconductors for Thin Film Transistors Based on Fluorinated Derivatives of Perylene Diimides

Effect of Fluorination on Aggregate Structure of Perylene Diimide

Benzodithiophene/Benzothiadiazole-Based ADA-Type Optoelectronic Molecules: Influence of Fluorine Substitution

A novel organic n-type material: fluorinated perylene diimide

Improvement of electrical characteristics of fluorinated perylene diimide thin-film transistors by gate dielectric surface treatment

Influences of Different Fluorinated Substituents on Electron Mobility of Perylene Diimides

Soluble perylene-containing polyimide for electroluminescent devices

Fluoranthene Imide Dimers with Strong Isomeric Effects on the Charge Transport Properties

Unique Aggregate Structure of Fluoroperylene Diimide Thin Film

Photovoltaic performances of fluorinated perylene diimide doped polythiophene thin films

Crystal Growth and Characterization of Fluorinated Perylene Diimides

Fluorinated Dielectrics‐Modulated Organic Phototransistors and Flexible Image Sensors

Unraveling the unusual effect of fluorination on crystal packing in an organic semiconductor

Effect of Fluorination on Molecular Orientation of Conjugated Polymers in High Performance Field-Effect Transistors

Organic Semiconducting Materials from Sulfur-Hetero Benzo[k]fluoranthene Derivatives: Synthesis, Photophysical Properties, and Thin Film Transistor Fabrication.

Enhancing Carrier Transport in 2D/3D Perovskite Heterostructures through Organic Cation Fluorination

Intermolecular Interactions, Morphology, and Photovoltaic Patterns in p-i-n Heterojunction Solar Cells With Fluorine-Substituted Organic Photovoltaic Materials

Effects of P-(Trifluoromethoxy)benzyl and P-(Trifluoromethoxy)phenyl Molecular Architecture on the Performance of Naphthalene Tetracarboxylic Diimide-Based Air-Stable N-Type Semiconductors.

Valence Electronic Properties Of N-Channel Organic Materials Based On Fluorinated Derivatives Of Perylene Diimides

Effect of Backbone Fluorine and Chlorine Substitution on Charge‐Transport Properties of Naphthalenediimide‐Based Polymer Semiconductors