Artificial Vision Adaption Mimicked by an Optoelectrical In 2 O 3 Transistor Array
Chenxing Jin,Wanrong Liu,Yunchao Xu,Yulong Huang,Yiling Nie,Xiaofang Shi,Gengming Zhang,Pei He,Jian Zhang,Hongtao Cao,Jia Sun,Junliang Yang
DOI: https://doi.org/10.1021/acs.nanolett.2c00599
IF: 10.8
2022-03-28
Nano Letters
Abstract:Simulation of biological visual perception has gained considerable attention. In this paper, an optoelectrical In2O3 transistor array with a negative photoconductivity behavior is designed using a side-gate structure and a screen-printed ion-gel as the gate insulator. This paper is the first to observe a negative photoconductivity in electrolyte-gated oxide devices. Furthermore, an artificial visual perception system capable of self-adapting to environmental lightness is mimicked using the proposed device array. The transistor device array shows a self-adaptive behavior of light under different levels of light intensity, successfully demonstrating the visual adaption with an adjustable threshold range to the external environment. This study provides a new way to create an environmentally adaptive artificial visual perception system and has far-reaching significance for the future of neuromorphic electronics.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acs.nanolett.2c00599.Experimental details, AFM and XRD images of In2O3 films, photographs of ion-gel arrays and device arrays, comparative experimental data, and detailed experimental data for visual adaptation (PDF)This article has not yet been cited by other publications.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology