Design of Si/SiO_2 Micropillar Cavities for Purcell-enhanced Single Photon Emission at 155 Μm from InAs/InP Quantum Dots

Hai‐Zhi Song,Kazuhiro Takemoto,T. Miyazawa,Motomu Takatsu,Satoshi Iwamoto,Tsuyoshi Yamamoto,Yasuhiko Arakawa
DOI: https://doi.org/10.1364/ol.38.003241
2013-01-01
Abstract:Numerical simulations were carried out on micropillar cavities consisting of Si/SiO2 distributed Bragg reflectors (DBRs) with an InP spacer layer. Owing to a large refractive index contrast of ~2 in DBRs, cavities with just 4/6.5 top/bottom DBR pairs that give a low pillar height (~4.5 μm), have noticeable Purcell-enhancement effect in the 1.55-μm band. With careful designs on cavities with diameters of ~2.30 μm, a quality factor of up to 3300, a nominal Purcell factor of up to 110, and an output efficiency of ~60% are obtainable. These results ensure improvement of operation frequency and enhancement of photon indistinguishability for 1.55-μm single photon sources based on InAs/InP quantum dots.
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