Abstract:Recent SRAM-based computation-in-memory (CIM) macros enable mid-to-high precision multiply-and-accumulate (MAC) operations with improved energy efficiency using ultra-small/small capacity (0.4-8KB) memory devices. However, advanced CIM-based edge-AI chips favor multiple mid/large capacity SRAM-CIM macros: with high input (IN) and weight (W) precision to reduce the frequency of data reloads from external DRAM, and to avoid the need for additional SRAM buffers or ultra-large on-chip weight buffers. However, enlarging memory capacity and throughput increases the delay parasitics on WLs and BLs, and the number of parallel computing elements; resulting in longer compute latency (tAC), lower energy-efficiency (EF), degraded signal margin, and larger fluctuations in power consumption across data-patterns (see Fig. 16.3.1). Recent SRAM-CIM macros tend to not use in-lab SRAM cells, with a logic-based layout, in favor of foundry provided compact-layout 8T [2], 3, [5] or 6T cells with local-computing cells (LCCs) [4], [6] to reduce the cell-array area and facilitate manufacturing. This paper presents a SRAM-CIM structure using (1) a segmented-BL charge-sharing (SBCS) scheme for MAC operations, with low energy consumption and a consistently high signal margin across MAC values (MACV); (2) An new LCC cell, called a source-injection local-multiplication cell (SILMC), to support the SBCS scheme with a consistent signal margin against transistor process variation; and (3) A prioritized-hybrid-ADC (Ph-ADC) to achieve a small area and power overhead for analog readout. A 28nm 384kb SRAM-CIM macro was fabricated using a foundry compact-6T cell with support for MAC operations with 16 accumulations of 8b-inputs and 8b-weights with near-full precision output (20b). This macro achieves a 7.2ns tAC and a 22.75TOPS/W EF for 8b-MAC operations with an FoM (IN-precision × W-precision × output-ratio × output-channel × EF/tAC) 6× higher than prior work.

A 768.7-2124.2 TOPS/W Time-Domain Computing-in-Memory Macro with Low Static Leakage and Precision-Configurable TDC

A Low-Power In-Memory Multiplication and Accumulation Array with Modified Radix-4 Input and Canonical Signed Digit Weights

A Robust 8-Bit Non-Volatile Computing-in-Memory Core for Low-Power Parallel MAC Operations.

A 28nm 8Kb Reconfigurable SRAM Computing-In-Memory Macro With Input-Sparsity Optimized DTC for Multi-mode MAC Operations

A 128 Kb DAC-less 6T SRAM computing-in-memory macro with prioritized subranging ADC for AI edge applications

A 137.5 TOPS/W SRAM Compute-in-Memory Macro with 9-b Memory Cell-Embedded ADCs and Signal Margin Enhancement Techniques for AI Edge Applications

A 28nm 32kb SRAM Computing-in-Memory Macro with Hierarchical Capacity Attenuator and Input Sparsity-Optimized ADC for 4b Mac Operation

An XOR-10T SRAM computing-in-memory macro with current MAC operations and time-to-digital conversion for BNN edge processors

An 8-Mb DC-Current-Free Binary-to-8b Precision ReRAM Nonvolatile Computing-in-Memory Macro using Time-Space-Readout with 1286.4-21.6TOPS/W for Edge-AI Devices

PS-IMC: A 2385.7 TOPS/W/b Precision Scalable In-Memory Computing Macro with Bit-Parallel Inputs and Decomposable Weights for DNNs

A Twin-8T SRAM Computation-in-Memory Unit-Macro for Multibit CNN-Based AI Edge Processors

7.8 A 22nm Delta-Sigma Computing-In-Memory (Δ∑CIM) SRAM Macro with Near-Zero-Mean Outputs and LSB-First ADCs Achieving 21.38TOPS/W for 8b-MAC Edge AI Processing

A 40nm 33.6Tops/W 8T-SRAM Computing-in-Memory Macro with DAC-less Spike-Pulse-Truncation Input and ADC-less Charge-Reservoir-Integrate-Counter Output

A Dual-Wordline 6T SRAM Computing-In-Memory Macro Featuring Full Signed Multi-Bit Computation for Lightweight Networks

A High-Density and Reconfigurable SRAM-Based Digital Compute-In-Memory Macro for Low-Power AI Chips.

34.7 A 28nm 2.4Mb/mm<sup>2</sup> 6.9 - 16.3TOPS/mm<sup>2</sup> eDRAM-LUT-Based Digital-Computing-in-Memory Macro with In-Memory Encoding and Refreshing

A 4-Bit Calibration-Free Computing-In-Memory Macro with 3T1C Current-Programed Dynamic-Cascode Multi-Level-Cell Edram

An 11T1C Bit-Level-Sparsity-Aware Computing-in-Memory Macro with Adaptive Conversion Time and Computation Voltage

A Local Computing Cell and 6T SRAM-Based Computing-in-Memory Macro With 8-b MAC Operation for Edge AI Chips

16.3 A 28nm 384kb 6T-SRAM Computation-in-Memory Macro with 8b Precision for AI Edge Chips

34.3 A 22nm 64kb Lightning-Like Hybrid Computing-in-Memory Macro with a Compressed Adder Tree and Analog-Storage Quantizers for Transformer and CNNs.