Abstract:Advanced MaterialsVolume 28, Issue 3 p. 546-546 FrontispieceFree Access Transistors: Realization of Room-Temperature Phonon-Limited Carrier Transport in Monolayer MoS2 by Dielectric and Carrier Screening (Adv. Mater. 3/2016) Zhihao Yu, Zhihao Yu National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093 P. R. ChinaSearch for more papers by this authorZhun-Yong Ong, Zhun-Yong Ong Institute of High Performance Computing, 1 Fusionopolis Way, Singapore, 138632 SingaporeSearch for more papers by this authorYiming Pan, Yiming Pan National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, 210093 P. R. ChinaSearch for more papers by this authorYang Cui, Yang Cui National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093 P. R. ChinaSearch for more papers by this authorRun Xin, Run Xin National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093 P. R. ChinaSearch for more papers by this authorYi Shi, Corresponding Author Yi Shi National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093 P. R. ChinaSearch for more papers by this authorBaigeng Wang, Baigeng Wang National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, 210093 P. R. ChinaSearch for more papers by this authorYun Wu, Yun Wu Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Device Institute, Nanjing, 210016 P. R. ChinaSearch for more papers by this authorTangsheng Chen, Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Device Institute, Nanjing, 210016 P. R. ChinaSearch for more papers by this authorYong-Wei Zhang, Yong-Wei Zhang Institute of High Performance Computing, 1 Fusionopolis Way, Singapore, 138632 SingaporeSearch for more papers by this authorGang Zhang, Corresponding Author Gang Zhang Institute of High Performance Computing, 1 Fusionopolis Way, Singapore, 138632 SingaporeSearch for more papers by this authorXinran Wang, Corresponding Author Xinran Wang National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093 P. R. ChinaSearch for more papers by this author Zhihao Yu, Zhihao Yu National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093 P. R. ChinaSearch for more papers by this authorZhun-Yong Ong, Zhun-Yong Ong Institute of High Performance Computing, 1 Fusionopolis Way, Singapore, 138632 SingaporeSearch for more papers by this authorYiming Pan, Yiming Pan National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, 210093 P. R. ChinaSearch for more papers by this authorYang Cui, Yang Cui National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093 P. R. ChinaSearch for more papers by this authorRun Xin, Run Xin National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093 P. R. ChinaSearch for more papers by this authorYi Shi, Corresponding Author Yi Shi National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093 P. R. ChinaSearch for more papers by this authorBaigeng Wang, Baigeng Wang National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, 210093 P. R. ChinaSearch for more papers by this authorYun Wu, Yun Wu Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Device Institute, Nanjing, 210016 P. R. ChinaSearch for more papers by this authorTangsheng Chen, Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Device Institute, Nanjing, 210016 P. R. ChinaSearch for more papers by this authorYong-Wei Zhang, Yong-Wei Zhang Institute of High Performance Computing, 1 Fusionopolis Way, Singapore, 138632 SingaporeSearch for more papers by this authorGang Zhang, Corresponding Author Gang Zhang Institute of High Performance Computing, 1 Fusionopolis Way, Singapore, 138632 SingaporeSearch for more papers by this authorXinran Wang, Corresponding Author Xinran Wang National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093 P. R. ChinaSearch for more papers by this author First published: 14 January 2016 https://doi.org/10.1002/adma.201670019Citations: 4AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinkedInRedditWechat Graphical Abstract On page 547, charged impurities in monolayer MoS2 are effectively screened by combining a high-κ dielectric substrate and a high density of carriers, leading to an unprecedented room-temperature electron mobility of ≈150 cm2 V−1 s−1. Y. Shi, G. Zhang, X. Wang and co-workers also demonstrate phonon-limited transport in monolayer MoS2 for the first time, an important milestone for electronic device applications. Citing Literature Volume28, Issue3January 20, 2016Pages 546-546 RelatedInformation

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