Current–voltage Characteristics of a Ag:Y Ba2Cu3O7−δ/Nb-doped SrTiO3bilayer Structure

Z Liu,Yuying Zhu,Buwen Cheng,S F Wang,Shouyu Dai,Yiru Zhou,Z H Chen,Haojian Lu,Kuijuan Jin,Guang Yang
DOI: https://doi.org/10.1088/0953-2048/18/4/011
2005-01-01
Abstract:A Ag:Y Ba2Cu3O7−δ/SrNb0.01Ti0.99O3 bilayer structure was fabricated by pulsed-laser deposition. Current–voltage (I–V) dependence measurements of the bilayer were carried out in the temperature range 5–250 K with variation of magnetic field from 0 to 50 kOe. Schottky junction behaviour was observed at temperatures higher than the critical temperature of superconductivity (Tc) due to the n-type semiconductor SrNb0.01Ti0.99O3 and the metallic conductivity of Y Ba2Cu3O7−δ. At temperatures lower than Tc, the bilayer becomes a degenerate heterostructure p–n junction. The I–V characteristic shows a sequence of current steps at forward voltage and an oscillation character at backward voltage. Energy diagrams of the Ag:Y Ba2Cu3O7−δ/SrNb0.01Ti0.99O3 bilayer structure have been proposed to explain the peculiar I–V characteristics.
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