Microwave Surface Impedance of MgB2thin Film

B. B. Jin,N. Klein,Won Nam Kang,Hyeong-Jin Kim,Eun‐Mi Choi,Sung-I K Lee,Thomas Dahm,Kazumi Maki

DOI: https://doi.org/10.1088/0953-2048/16/2/314

2003-01-01

Abstract:The microwave surface impedance Zs = Rs + jωμ0λ was measured with dielectric resonator techniques for two c-axis-oriented MgB2 thin films. The temperature dependence of the penetration depth λ measured with a sapphire resonator at 17.93 GHz can be well fitted from 5 K close to Tc by the standard BCS integral expression assuming the reduced energy gap Δ(0)/kTc to be as low as 1.13 and 1.03 for the two samples. From these fits the penetration depth at zero temperatures was determined to be 102 nm and 107 nm, respectively. The results clearly indicate the s-wave nature of the order parameter. The temperature dependence of surface resistance Rs, measured with a rutile dielectric resonator, shows an exponential behaviour below about Tc/2 with a reduced energy gap being consistent with the one determined from the λ data. The Rs value at 4.2 K was found to be as low as 19 μΩ at 7.2 GHz, which is comparable with that of a high-quality high-temperature thin film of YBa2Cu3O7. A higher-order mode at 17.9 GHz was employed to determine the frequency f dependence of Rs ∝ fn(T). Our results revealed a decrease of n with increasing temperature ranging from n = 2 below 8 K to n = 1 from 13 to 34 K.