Probing coordination geometry and electronic nature of Cu center in mixed ligand N,N,N′,N'-tetramethylethylenediamine copper complexes using XAFS
M. Bairagi,V.K. Hinge,N. Yadav,S.K. Joshi,B.D. Shrivastava,S.N. Jha,D. Bhattacharya
DOI: https://doi.org/10.1016/j.radphyschem.2024.111609
IF: 2.776
2024-02-15
Radiation Physics and Chemistry
Abstract:X-ray absorption fine structure (XAFS) has been investigated at the Cu K-edge in the copper complexes: [Cu tmen ox ]·4H 2 O( 1 ), [Cu tmen bipy ](ClO 4 ) 2 ( 2 ), [Cu tmen en ](SO 4 )·4H 2 O ( 3 ), [Cu tmen gly ](ClO 4 ) ( 4 ), [Cu tmen phen ](ClO 4 ) 2 ( 5 ), where tmen = N,N,N′,N'-tetramethyl-ethylenediamine, ox = oxalate ion, en = ethylenediamine, gly = glycinate ion, bpy = 2,2′-bipyridine, phen = 1,10-phenanthroline, to probe the coordination geometry and electronic nature of the Cu metal center. Crystal structure of 1 is known to be distorted octahedral and the same result has been obtained from EXAFS analysis. Structures of 2 – 5 are not available. From analysis of XANES and its derivative spectra, the structures of 2 and 3 have been estimated to be square pyramidal and of 4 and 5 to be square planar. From EXAFS analysis, the same structures have been arrived at. Four O/N atoms form the square plane in 2 – 5 with Cu atom at center of the square. In 2 and 3 , one O/N atom is at apical position forming the pyramid. Ab-initio XANES calculations have been performed to obtain simulated XANES spectra as well as p-DOS and d-DOS for the absorbing Cu metal center and these have been compared and correlated with the experimental spectra. The splitting of Cu K-edge into two edges K 1 and K 2 in both the experimental and simulated spectra have been correlated with the theoretical p-DOS. The trends in the relative intensities of the two peaks in the derivative XANES spectra and in the p-DOS have been observed to be similar in the three geometries. The occurrence of pre-edge has been correlated with the d-DOS.
chemistry, physical,physics, atomic, molecular & chemical,nuclear science & technology