Interface Engineering Yields Efficient Perovskite Light-Emitting Diodes

Rashid Khan,Guangyi Shi,Wenjing Chen,Zhengguo Xiao,Liming Ding

DOI: https://doi.org/10.1088/1674-4926/44/12/120501

2023-01-01

Journal of Semiconductors

Abstract:Metal-halide perovskites (MHPs) have emerged as a new class of semiconductors used in perovskite solar cells (PSCs)[1-5], perovskite light-emitting diodes (PeLEDs)[6-12], photo/X-ray detectors[13-16], and memristors[17, 18]. PeLEDs can emit different light with high purity[19, 20]. Over the past few years, the external quantum efficiency (EQE) has been rapidly increased from less than 1％ to above 28％ due to the intensive research efforts in composition engineering, device structure optimization and defect passivation[21-23]. Interface defects passivation is useful for developing efficient and sta-ble PeLEDs[24]. Alkylammonium salts exhibited strong passiva-tion function due to the chemical interaction between ammo-nium and [PbI6]4- octahedron[25, 26]. The alkyl chain length is a critical factor in defect passivation[27], which has been demon-strated in perovskite solar cells[28]. In this work, we thor-oughly examined the functions of alkylammonium iodide with tunable alkyl chain lengths (propyl ammonium iodide (PAI), butylammonium iodide (BAI), and dodecylammonium iodide (DAI)) in passivating defects of the interface between MAPbI3 emission layer and the electron-transport layer (ETL). We found that the passivation function intensifies with increas-ing alkyl chain length. The EQE reaches 16.5％ when the emis-sive layer is post-treated by DAI with longer chain.