Z-Scheme Heterojunction Engineering and Hole-Extraction Layer Enable Efficient Photoelectrochemical Water Splitting on Bivo4 Photoanode

Lin Wang,Lei Ding,Wei Zhai,Shuai Chu,Jie Li,Guangxin He,Bin Wang,Zhengbo Jiao
DOI: https://doi.org/10.1016/j.apsusc.2024.159963
IF: 6.7
2024-01-01
Applied Surface Science
Abstract:This study presents a novel Z-scheme heterostructure that was developed by integrating three-dimensional CoFe 2 O 4 nanospheres with Mo and W co-doped BiVO 4 (MW:BVO). Subsequently, ultra-thin hydroxides (NiOOH-FeOOH) were grown on the surface of the MW:BVO@CFO photoanode in the presence of tannic acid (TA), resulting in the formation of MW:BVO@CFO/TANF photoanodes. Notably, TANF served as a hole extraction layer. Compared to pristine MW:BVO, the photocurrent density of MW:BVO@CFO/TANF photoanodes exhibited a significant enhancement from 0.96 mA/cm 2 to 6.03 mA/cm 2 at 1.23 V & Oslash; with a charge separation efficiency of 90.2 % due to the synergistic effect of the Z-scheme structure and hole extraction layer. Notably, the Z-scheme architecture facilitates the effective separation and transfer of electron-hole pairs, thereby retaining electrons and holes with high redox capacity. Meanwhile, the hole extraction layer quickly exports and aggregates the photo-generated holes, thereby further improving the separation efficiency of electron-hole pairs.
What problem does this paper attempt to address?