Narrow Spectral Linewidth O-Band Quantum Dot Distributed Feedback Lasers

Shizhe Lin,Zhengqing Ding,Kun Zhan,Minghao Cai,Ying Yu,Siyuan Yu

DOI: https://doi.org/10.1109/ACP/POEM59049.2023.10369073

2023-01-01

Abstract:We reported GaAs-based quantum dot distributed feedback lasers, with a tuning range of 5.21 nm, a side-mode suppression ratio (SMSR) of 48 dB and a minimum linewidth of 140 kHz.

What problem does this paper attempt to address?

High-Power, Narrow-Linewidth, and Low-Noise Quantum Dot Distributed Feedback Lasers

Shuai Wang,Zun-Ren Lv,Qiu-Lu Yang,Sheng-Lin Wang,Hong-Yu Chai,Lei Meng,Dan Lu,Chen Ji,Xiao-Guang Yang,Tao Yang

DOI: https://doi.org/10.1002/lpor.202200979

2023-01-01

LASER & PHOTONICS REVIEWS

Abstract:Single-frequency semiconductor lasers represent a critical role in optical communications, light detection and ranging systems, photonics integrated circuits, etc. Here, combining atom-like quantum dot (QD) materials and advanced lateral gratings, a high-power, ultra-low-noise 1.3 & mu;m InAs/GaAs QD distributed feedback laser is demonstrated. Stable single-longitudinal-mode output power of 100 mW from 25 celcius to 85 celcius is achieved with a maximum side mode suppression ratio of 62.6 dB, and the variations of threshold current and slope efficiency over the temperature range are slight, indicting a high temperature stability. A record-narrow intrinsic linewidth of 1.62 kHz is achieved at 55 celcius with a white noise level of merely 515 Hz(2) Hz(-1), and a minimum averaged relative intensity noise of only -166 dB/Hz between 0.1 GHz and 20 GHz is obtained at 25 celcius. Furthermore, a strong tolerance to external optical feedback (& rang; -14 dB) is demonstrated in the range from 25 celcius to 85 celcius, with a maximum value of -8 dB at 85 celcius. This high-quality single-frequency laser fabricated with simplified processes and compact size paves the way for its future large-scale applications such as high-capacity optical communication, high-precision optical detection, high-speed optical interconnections, etc.
High Linearity InAs/GaAs Quantum Dot Distributed Feedback Lasers

Minghao Cai,Zhengqing Ding,Kun Zhan,Ying Yu,Siyuan Yu

DOI: https://doi.org/10.1109/acp/poem59049.2023.10369023

2023-01-01

Abstract:We demonstrate the modulation linearity performances of GaAs-based quantum dot (QD) distributed feedback (DFB) diode lasers, with a 1-dB compression point of 19.25 dBm, an input third order intercept point of 28.6 dBm and a spurious free dynamic range of 92.6 dB.Hz 2/3 . The results are decisive for the QD lasers applied in analog optical communication.
Ultra-Low Threshold Lasing In A Quantum Dot Microdisk Cavity

G. S. Solomon,S. Goetzinger,W. Fang,Z. G. Xie,H. Cao

DOI: https://doi.org/10.1109/cleo.2007.4452488

2007-01-01

Abstract:We describe microdisk lasers exhibiting submicrowatt CW lasing thresholds from a small number of QD emitters. Changes in the cavity linewidth, second-order correlation measurements, and output emission versus input pumping are used to verify lasing. (C)2007 Optical Society of America
Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 Μm

Yating Wan,Sen Zhang,Justin C. Norman,M. J. Kennedy,William He,Yeyu Tong,Chen Shang,Jian-Jun He,Hon Ki Tsang,Arthur C. Gossard,John E. Bowers

DOI: https://doi.org/10.1002/lpor.201900348

2020-01-01

LASER & PHOTONICS REVIEWS

Abstract:Wavelength tunable lasers are increasingly needed as key components for wavelength resource management technologies in future dense wavelength division multiplexing (DWDM) systems. While material systems with multiple quantum wells as an active region are widely used in long‐wavelength tunable lasers, the unique advantages of InAs/GaAs quantum dots (QDs) for low‐power operation, excellent thermal stability, and wide spectral bandwidth may open a new avenue in this field. Combining the advantages of QDs with a special designed half‐wave coupled cavity structure, directly modulated, single‐mode, tunable InAs/GaAs QD lasers are demonstrated at 1.3 µm wavelength range. The half‐wave coupler provides an active–active coupled‐cavity tunable structure without involving gratings or multiple epitaxial growths, producing synchronous power transfer in the two output waveguides and high single‐mode selectivity. 27‐channel wavelength switching is achieved with side‐mode‐suppression‐ratio of around 35 dB. Under continuous‐wave electrical injection, over 9 mW output power can be measured with 716 kHz Lorentzian linewidth, 4 GHz 3‐dB bandwidth, and 8 Gbit s−1 non‐return‐to‐zero signal modulation by directly probing the chip.
High Performance Index-Coupled Distributed Feedback Inas/Gaas Quantum Dots-In-A-Well Lasers with Laterally Corrugated Waveguides

Yuanbing Cheng,Haodong Qiu,Xiaonan Hu,Zhengji Xu,Xianshu Luo,Junfeng Song,Daohua Zhang,Hong Wang,Qi Jie Wang

DOI: https://doi.org/10.1364/cleo_at.2016.jth2a.51

2016-01-01

Abstract:We demonstrate an index-coupled distributed feedback InAs/GaAs quantum dots-in-a-well laser using a laterally corrugated ridge waveguide. Stable ground-state single-mode emission at 1224 nm with a side-mode-suppression-ratio more than 40 dB and low threshold is achieved.
High power lateral coupled InAs/GaAs quantum dot distributed feedback lasers grown on Si(001) substrates

Shuai Wang,Zun-Ren Lv,ShengLin Wang,Hong-Yu Chai,Wan-Lin Liu,Ke-Han Jiang,Xiao-Guang Yang,Tao Yang

DOI: https://doi.org/10.1364/oe.537635

IF: 3.8

2024-09-11

Optics Express

Abstract:Shuai Wang, Zunren Lv, Shenglin Wang, Hongyu Chai, Wanlin Liu, Kehan Jiang, Xiaoguang Yang, Tao Yang High-quality single-frequency semiconductor lasers play a key role in silicon optical integrated systems. Combining high density 8-stacked ... [Opt. Express 32, 34444-34452 (2024)]

optics
Quantum Dot Lasers: Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 Μm (laser Photonics Rev. 14(3)/2020)

Yating Wan,Sen Zhang,Justin C. Norman,MJ Kennedy,William He,Yeyu Tong,Chen Shang,Jian‐Jun He,Hon Ki Tsang,Arthur C. Gossard,John E. Bowers

DOI: https://doi.org/10.1002/lpor.202070021

2020-01-01

Abstract:In article number 1900348, Yating Wan and co-workers demonstrate directly modulated, single-mode, tunable InAs/GaAs quantum dot (QD) lasers at 1.3 µm wavelength range, by combining the advantages of QDs with a special designed half-wave coupled cavity structure. Without involving re-growth steps or sub-wavelength grating lithography, 27-channel wavelength switching was achieved with side-mode-suppression-ratio of around 35 dB and output power of over 9 mW.
InAs/GaAs Quantum Dot Dual-Mode Distributed Feedback Laser Towards Large Tuning Range Continuous-Wave Terahertz Application

Qi-zhu Li,Yuan-qing Huang,Ji-qiang Ning,Cheng Jiang,Xu Wang,Hong-mei Chen,Xiao Li,Rui-ying Zhang,Kai Zhang,Jia-hua Min,Yong Peng,Zi-yang Zhang

DOI: https://doi.org/10.1186/s11671-018-2674-3

2018-01-01

Nanoscale Research Letters

Abstract:In this paper, a laterally coupled distributed feedback (LC-DFB) laser based on modulation p-doped multiple InAs/GaAs quantum dot (QD) structures has been fabricated. The device exhibits a high side-mode suppression ratio (SMSR) of > 47 dB and a high thermal stability of dλ/dT = 0.092 nm/K under continuous-wave (CW) operation, which is mainly attributed to the high material gain prepared by modulation p-doping and rapid thermal annealing (RTA) process, and the significantly reduced waveguide losses by shallow-etched gratings and its close proximity to the laser ridge feature in the LC-DFB laser. With this superior performance of the DFB laser, the wide tunable dual-wavelength lasing operation has been obtained by delicately defining different periods for the grating structures on the two sides of the laser ridge or combining the reduced laser cavity length. The wavelength spacing between the two lasing modes can be flexibly tuned in a very wide range from 0.5 to 73.4 nm, corresponding to the frequency difference from 0.10 to 14 THz, which is the largest tuning range by the utilization of single device and hence providing a new opportunity towards the generation of CW THz radiation.
High-performance Distributed Feedback Quantum Dot Lasers with Laterally Coupled Dielectric Gratings

Zhuohui Yang,Zhengqing Ding,Lin Liu,Hancheng Zhong,Sheng Cao,Xinzhong Zhang,Shizhe Lin,Xiaoying Huang,Huadi Deng,Ying Yu,Siyuan Yu

DOI: https://doi.org/10.1364/prj.454200

IF: 7.6

2022-01-01

Photonics Research

Abstract:The combination of grating-based frequency-selective optical feedback mechanisms, such as distributed feedback (DFB) or distributed Bragg reflector (DBR) structures, with quantum dot (QD) gain materials is a main approach towards ultrahigh-performance semiconductor lasers for many key novel applications, as either stand-alone sources or on-chip sources in photonic integrated circuits. However, the fabrication of conventional buried Bragg grating structures on GaAs, GaAs/Si, GaSb, and other material platforms has been met with major material regrowth difficulties. We report a novel and universal approach of introducing laterally coupled dielectric Bragg gratings to semiconductor lasers that allows highly controllable, reliable, and strong coupling between the grating and the optical mode. We implement such a grating structure in a low-loss amorphous silicon material alongside GaAs lasers with InAs/GaAs QD gain layers. The resulting DFB laser arrays emit at pre-designed 0.8 THz local area network wavelength division multiplexing frequency intervals in the 1300 nm band with record performance parameters, including sidemode suppression ratios as high as 52.7 dB, continuous-wave output power of 26.6 mW (room temperature) and 6 mW (at 55°C), and ultralow relative intensity noise (RIN) of < − 165 dB / Hz (2.5–20 GHz). The devices are also capable of isolator-free operating under very high external reflection levels of up to − 12.3 dB while maintaining high spectral purity and ultralow RIN qualities. These results validate the novel laterally coupled dielectric grating as a technologically superior and potentially cost-effective approach for fabricating DFB and DBR lasers free of their semiconductor material constraints, which are thus universally applicable across different material platforms and wavelength bands.
Q-modulated Distributed Feedback Laser with 28ghz 3db Bandwidth

Hongli Zhu,Lei Wang,Jian-Jun He

DOI: https://doi.org/10.1364/acp.2012.as4h.3

2012-01-01

Abstract:Get PDF Email Share Share with Facebook Tweet This Post on reddit Share with LinkedIn Add to CiteULike Add to Mendeley Add to BibSonomy Get Citation Copy Citation Text H. Zhu, L. Wang, and J. He, "Q-modulated distributed feedback laser with 28GHz 3dB bandwidth," in Asia Communications and Photonics Conference, OSA Technical Digest (online) (Optica Publishing Group, 2012), paper AS4H.3. Export Citation BibTex Endnote (RIS) HTML Plain Text Citation alert Save article
Widely Tunable Distributed Feedback Semiconductor Lasers with Constant Power and Narrow Linewidth

Qi Wang,Jinjin Guo,Wei Chen,Jianguo Liu,Ninghua Zhu

DOI: https://doi.org/10.3788/CJL201744.0101004

2017-01-01

Chinese Journal of Lasers

Abstract:A widely tunable distributed feedback (DFB)semiconductor laser with constant power and narrow linewidth is fabricated. The laser chip is based on the asymmetric phase-shifted DFB structure, which can effectively narrow the bandwidth of the output. By precisely controlling the temperature and driving current, the dynamic characteristic of internal carriers and the refractive index of the material can be controlled effectively, so wide-band tuning wavelength and constant output power are obtained. The wavelength tuning range is over 3. 5 nm, the laser power is 7. 4 mW, the linewidth is about 220kHz and the side mode suppression radio is 52. 7dB. This laser has wide application prospects for tunable diode laser absorption spectroscopy(TDLAS).
High performance distributed feedback quantum dot lasers with laterally coupled dielectric grating

Zhuohui Yang,Zhengqing Ding,Lin Liu,Hancheng Zhong,Sheng Cao,Xinzhong Zhang,Shizhe Lin,Xiaoying Huang,Huadi Deng,Ying Yu,Siyuan Yu

DOI: https://doi.org/10.48550/arXiv.2110.14186

2021-10-27

Abstract:The combination of grating-based frequency-selective optical feedback mechanisms, such as distributed feedback (DFB) or distributed Bragg reflector (DBR) structures, with quantum dot (QD) gain materials is a main approach towards ultra-high-performance semiconductor lasers for many key novel applications, either as stand-alone sources or as on-chip sources in photonic integrated circuits. However, the fabrication of conventional buried Bragg grating structures on GaAs, GaAs/Si, GaSb and other material platforms have been met with major material regrowth difficulties. We report a novel and universal approach of introducing laterally coupled dielectric Bragg gratings to semiconductor lasers that allows highly controllable, reliable and strong coupling between the grating and the optical mode. We implement such a grating structure in a low-loss amorphous silicon material alongside GaAs lasers with InAs/GaAs QD gain layers. The resulting DFB laser arrays emit at pre-designed 0.8 THz LWDM frequency intervals in the 1300 nm band with record performance parameters, including side mode suppression ratios as high as 52.7 dB, continuous-wave output power of 27.7 mW (room-temperature) and 10 mW (at 70°C), and ultra-low relative intensity noise (RIN) of < -165 dB/Hz (2.5-25 GHz). The devices are also capable of operating isolator-free under very high external reflection levels of up to -12.3 dB whilst maintaining the high spectral and ultra-low RIN qualities. These results validate the novel laterally coupled dielectric grating as a technologically superior and potentially cost-effective approach for fabricating DFB and DBR lasers free of their semiconductor material constraints, thus universally applicable across different material platforms and wavelength bands.

Optics,Applied Physics
Second-Order Distributed Feedback Quantum Cascade Lasers at 7.8μm

Yu Guo,Fengqi Liu,Junqi Liu,Xiuzhen Lu,Zhanguo WANG

DOI: https://doi.org/10.3321/j.issn:0253-4177.2005.03.039

2005-01-01

Abstract:The realization of distributed feedback quantum cascade lasers based on strain-compensated In0.53+xGa0.47-x As/In0.52-yAl0.48+yAs grown on InP substrate using molecular beam epitaxy is reported. The lasers operate at λ ≈ 7.8 mu;m. The second-order surface grating with a period of 2.45 μm is used for feedback. For 1% duty cycle and 5 kHz repetition rate, the emission spectrum is single mode with more than 20 dB side mode suppression ratio between 93 and 173 K with the tuning coefficient of dλ/dT = 0.5125 nm/K. Peak optical power is over than 12 mW up to 153 K.
Electrically-Pumped Continuous-Wave Quantum-Dot Distributed Feedback Laser Array on Silicon

Yi Wang,Siming Chen,Ying Yu,Lidan Zhou,Lin Liu,Chunchuan Yang,Mengya Liao,Mingchu Tang,Zizhuo Liu,Jiang Wu,A.J. Seeds,Wei Li,I M Ross,Huiyun Liu,Siyuan Yu

2018-01-01

Abstract:Electrically-pumped lasers directly grown on silicon are key devices interfacing silicon microelectronics and photonics. We report here for the first time, an electrically pumped, room temperature, continuous-wave and single-mode distributed feedback (DFB) laser array fabricated in InAs/GaAs quantum-dot gain material epitaxially grown on silicon with a record wavelength covering range of 100 nm. The array is also coarse wavelength division multiplexing (CWDM) compatible, with an accurate channel spacing of 20$pm$0.2 nm. Individual devices have a threshold as low as 550 A cm-2 at room temperature and stable single mode operation with a side mode suppression ratio (SMSR) as high as 50 dB. For the first time, the performance of epitaxially grown silicon-based lasers is elevated to the point so close to practical applications, showing the great potential of this technology.
Quantum Dot Lasers: High Speed Evanescent Quantum‐Dot Lasers on Si (laser Photonics Rev. 15(8)/2021)

Yating Wan,Chao Xiang,Joel Guo,Rosalyn Koscica,MJ Kennedy,Jennifer Selvidge,Zeyu Zhang,Lin Chang,Weiqiang Xie,Duanni Huang,Arthur C. Gossard,John E. Bowers

DOI: https://doi.org/10.1002/lpor.202170042

2021-01-01

Abstract:In article number 2100057, John E. Bowers, Yating Wan, Chao Xiang, and co-workers report record-setting quantum dot (QD) distributed feedback lasers on Si with a 3-dB modulation bandwidth of 13 GHz, a threshold current of 4 mA, a side-mode-suppression-ratio of 60 dB, and a fundamental linewidth of 26 kHz. The broadband QD lasers and the Si-on-insulator waveguiding platform can be expanded to build fully functional photonic integrated circuits throughout the O band.
InAs quantum dots with a narrow photoluminescence linewidth for a lower threshold current density in 1.55 μm lasers

Bin Wang,Xuezhe Yu,Yugang Zeng,Weijie Gao,Wei Chen,Haoyu Shen,Kedi Ma,Hongxiao Li,Zizhuo Liu,Hui Su,Li Qin,Yongqiang Ning,Lijun Wang

DOI: https://doi.org/10.1364/ome.521709

2024-03-29

Optical Materials Express

Abstract:Bin Wang, Xuezhe Yu, Yugang Zeng, Weijie Gao, Wei Chen, Haoyu Shen, Kedi Ma, Hongxiao Li, Zizhuo Liu, Hui Su, Li Qin, Yongqiang Ning, Lijun Wang Uniform quantum dots (QDs) with a narrowed linewidth of photoluminescence (PL) are crucial for developing high-performance QD lasers. This ... [Opt. Mater. Express 14, 1074-1084 (2024)]

materials science, multidisciplinary,optics
High optical feedback tolerance of InAs/GaAs quantum dot distributed feedback lasers

Zhengqing Ding,Zhuohui Yang,Sheng Cao,Ying Yu,Siyuan Yu

DOI: https://doi.org/10.1364/acpc.2021.t4a.186

2021-01-01

Abstract:We investigate the optical feedback sensitivity of GaAs-based quantum dot (QD) distributed-feedback (DFB) diode lasers, which has demonstrated an isolator-free operation under a reflection of up to -16dB. This strong tolerance against the optical feedback suggests the high potential of isolator-free operation in photonic integrated circuits.
Ultra-broadband Tunable Single- and Double-Mode InAs/InP Quantum Dot External-Cavity Laser Emitting Around 165 Μm

Hui-Hong Yuan,Feng Gao,Tao Yang

DOI: https://doi.org/10.1364/ol.43.003025

IF: 3.6

2018-01-01

Optics Letters

Abstract:We report an ultra-wide tunable single- and double-mode InAs/InP quantum dot (QD) external-cavity (EC) laser in a Littrow configuration. By combining the high modal gain of the QD material in the long wavelength range and an anti-reflection/high-reflection facet coating, the entire single-mode tuning range was increased up to 190 nm under a relatively low constant pulsed injection current. Furthermore, the tunable range was further increased to 230 nm at different bias currents. In addition, a mode spacing as wide as 100 nm was achieved using the same QD-EC device in the dual-mode operation, corresponding to a frequency difference of approximately 11 THz. (C) 2018 Optical Society of America
Two-color Multi-Section Quantum Dot Distributed Feedback Laser.

Nader A. Naderi,Frederic Grillot,Kai Yang,Jeremy B. Wright,Aaron Gin,Luke F. Lester

DOI: https://doi.org/10.1364/oe.18.027028

IF: 3.8

2010-01-01

Optics Express

Abstract:A dual-wavelength emission source is realized by asymmetrically pumping a two-section quantum-dot distributed feedback laser. It is found that under asymmetric bias conditions, the powers between the ground-state and excited-state modes of the two-section device can be equalized, which is mainly attributed to the unique carrier dynamics of the quantum-dot gain medium. As a result, a two-color emission with an 8-THz frequency difference is realized that has potential as a compact THz source. It is also shown that the combination of significant inhomogeneous broadening and excited-state coupled mode operation allows the manipulation of the quantum-dot states through external optical stabilization.

Narrow Spectral Linewidth O-Band Quantum Dot Distributed Feedback Lasers

High-Power, Narrow-Linewidth, and Low-Noise Quantum Dot Distributed Feedback Lasers

High Linearity InAs/GaAs Quantum Dot Distributed Feedback Lasers

Ultra-Low Threshold Lasing In A Quantum Dot Microdisk Cavity

Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 Μm

High Performance Index-Coupled Distributed Feedback Inas/Gaas Quantum Dots-In-A-Well Lasers with Laterally Corrugated Waveguides

High power lateral coupled InAs/GaAs quantum dot distributed feedback lasers grown on Si(001) substrates

Quantum Dot Lasers: Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 Μm (laser Photonics Rev. 14(3)/2020)

InAs/GaAs Quantum Dot Dual-Mode Distributed Feedback Laser Towards Large Tuning Range Continuous-Wave Terahertz Application

High-performance Distributed Feedback Quantum Dot Lasers with Laterally Coupled Dielectric Gratings

Q-modulated Distributed Feedback Laser with 28ghz 3db Bandwidth

Widely Tunable Distributed Feedback Semiconductor Lasers with Constant Power and Narrow Linewidth

High performance distributed feedback quantum dot lasers with laterally coupled dielectric grating

Second-Order Distributed Feedback Quantum Cascade Lasers at 7.8μm

Electrically-Pumped Continuous-Wave Quantum-Dot Distributed Feedback Laser Array on Silicon

Quantum Dot Lasers: High Speed Evanescent Quantum‐Dot Lasers on Si (laser Photonics Rev. 15(8)/2021)

InAs quantum dots with a narrow photoluminescence linewidth for a lower threshold current density in 1.55 μm lasers

High optical feedback tolerance of InAs/GaAs quantum dot distributed feedback lasers

Ultra-broadband Tunable Single- and Double-Mode InAs/InP Quantum Dot External-Cavity Laser Emitting Around 165 Μm

Two-color Multi-Section Quantum Dot Distributed Feedback Laser.