Abstract:It is essential to understand to what extent the protected edge states of topological insulators (TIs) can survive against the degradation of the ubiquitous disorders in realistic devices. From a different perspective, disorders can also help to enrich the applications by modulation of the phases in TIs. In this work, the phases and phase transitions in stanene, a two-dimensional TI, have been investigated via the statistical approach based on the random matrix theory. Using a tight binding model with Aderson disorder term and the Landauer-Büttiker formalism, we calculated the conductance of realistic stanene ribbons of tens of nanometers long with random disorders. The calculated phase diagram presents TI in the gap, metal in high energy and ordinary insulator (OI) in large disorder region. Increasing the width of the ribbon can significantly enhance the robustness of TI phase against disorders. Due to different underlying symmetries, the metallic phase can be further categorized into unitary and orthogonal classes according to the calculated universal conductance fluctuations. The local density of states (LDOS) is calculated, showing characteristic patterns, which can facilitate the experimental identification of the phases. It is found that different phases have distinguishing statistical distribution of conductance. Whereas at the phase boundary the distribution exhibits intermediate features to show where the phase transition occurs. To reveal the phase evolution process, we further studied the effects of the disorders on respective transmission channels. It is found that when phase transition takes place, the major transmission channels of the old phase are fading and the new channels of the new phase are emerging.

Photoinduced Topological Phase Transition in Monolayer Ti_2SiCO_2

Photoinduced topological phase transition in monolayer Ti$_2$SiCO$_2$

Photoinduced Topological Phase Transition and Spin Polarization in A Two-Dimensional Topological Insulator

Polaritonic Chern insulators in monolayer semiconductors

Topological Phase Transition and Texture Inversion in a Tunable Topological Insulator.

Light induced sub-picosecond topological phase transition in MoTe2

Topological Phase Transitions in a Hybridized Three-Dimensional Topological Insulator

Topology-driven Magnetic Quantum Phase Transition in Topological Insulators.

The Magnetic, Electronic, and Light-Induced Topological Properties in Two-Dimensional Hexagonal FeX2 (X = Cl, Br, I) Monolayers

Zeeman-field-induced Valley-Dependent Topological Phase Transitions on the Surface of a Topological Crystalline Insulator SnTe

A topological crystalline insulator (TCI) phase via topological phase transition and crystalline mirror symmetry

Topological phase transition in Dirac fermionic heterostructures

Topological phase transition induced by magnetic proximity effect in two dimensions

Realization of Z$_2$ topological photonic insulators made from multilayer transition metal dichalcogenides

Photoinduced topological phase transitions in Kitaev-Heisenberg honeycomb ferromagnets with the Dzyaloshinskii-Moriya interaction

Magnetization-Induced Phase Transitions on the surface of 3D Topological Insulators

Quantum Spin Hall Effect and Topological Phase Transition in Two-Dimensional Square Transition Metal Dichalcogenides

Photoinduced Multistage Phase Transitions in Ta2NiSe5

Phase transitions, conductance fluctuations and distributions in disordered topological insulator stanene

Exploring topological phases in superconducting transition metal (Sc, Ti, V)-carbides

Magnetization-induced Phase Transitions on the Surface of Three-Dimensional Topological Insulators