High-performance self-powered ultraviolet to near-infrared photodetector based on WS2/InSe van der Waals heterostructure
Jinping Chen,Zhen Zhang,Yi Ma,Jiying Feng,Xiaoyu Xie,Xiaoxuan Wang,Aoqun Jian,Yuanzheng Li,Zhuxin Li,Heng Guo,Yizhi Zhu,Qiannan Cui,Zengliang Shi,Chunxiang Xu
DOI: https://doi.org/10.1007/s12274-022-5323-1
IF: 9.9
2022-12-30
Nano Research
Abstract:van der Waals heterostructures (vdWHs) based on two-dimensional (2D) materials without the crystal lattice matching constraint have great potential for high-performance optoelectronic devices. Herein, a WS 2 /InSe vdWH photodiode is proposed and fabricated by precisely stacking InSe and WS 2 flakes through an all-dry transfer method. The WS 2 /InSe vdWH forms an n—n heterojunction with strong built-in electric field due to their intrinsic n-type semiconductor characteristics and energy-band alignments with a large Fermi level offset between WS 2 and InSe. As a result, the device displays excellent photovoltaic behavior with a large open voltage of 0.47 V and a short-circuit current of 11.7 nA under 520 nm light illumination. Significantly, a fast rising/decay time of 63/76 μs, a large light on/off ratio of 10 5 , a responsivity of 61 mA/W, a high detectivity of 2.5 × 10 11 Jones, and a broadband photoresponse ranging from ultraviolet to near-infrared (325–980 nm) are achieved at zero bias. This study provides a strategy for developing high-performance self-powered broadband photodetectors based on 2D materials.
materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology