Fine-grained NaNbO3-based Relaxor Antiferroelectric Ceramics with High Energy-Storage Performance

Xiaoming Chen,Xuxin Cheng,Pengyuan Fan
DOI: https://doi.org/10.1007/s10854-023-11605-1
2023-01-01
Journal of Materials Science Materials in Electronics
Abstract:The breakdown electric field of NaNbO3-based antiferroelectric (AFE) ceramics is low, which makes it difficult to improve its energy-storage density. In this study, by adding nano-SiO2, sintering temperature of 0.88Na0.94Sm0.02NbO3-0.12Sr0.7Bi0.2TiO3 (NN-SBT-2Sm) relaxor AFE ceramics was reduced from 1150 to 980 °C. Mean grain size of NN-SBT-2Sm ceramics also decreased from 3.3 to 0.35 μm. Consequently, large recoverable energy-storage density of 5.89 J/cm3 was achieved at high breakdown electric field of 42 kV/mm, accompanied by good frequency stability (10–100 Hz) and temperature stability (25–125 °C). This performance demonstrates that the nano-SiO2-doped NN-SBT-2Sm relaxor AFE ceramics is a promising class of lead-free dielectric material for dielectric capacitors with high energy-storage density.
What problem does this paper attempt to address?