A Low-offset Low-noise Comparator for MVT-SiPM Detector Based on 0.18 Μm CMOS Process

W. Hu,Z. Li,Y. Li,H. Yu,H. Lao,Q. Xu,D. Xi,Q. Xie
DOI: https://doi.org/10.1109/nssmicrtsd49126.2023.10337995
2023-01-01
Abstract:Our group has been dedicated to develop a novel silicon photomultiplier (SiPM) integrated with a multi-voltage threshold (MVT) digitizer for PET detectors to achieve a direct digitization of SiPM output on the chip. This architecture requires a low-offset and low-noise comparator to implement MVT sampling precisely. In this paper, we report a new design of an op-amp comparator with internal positive feedback. A test chip was designed on a 0.18 μm CMOS process. The dimensions of the comparator are 36 μm × 24 μm. Our results show that the comparator achieves a 3.32 mV offset voltage at 1-sigma and a 500 μV temporal noise at 1-sigma. The power consumption is 1.98 mW. These results demonstrate that the proposed comparator is suitable to be applied in the MVT-SiPM detector.
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