Abstract:Using temperature dependent photoluminescence (PL), polarization resolved PL and Raman spectroscopy, we investigate the effect of in situ vacuum annealing as well as the relaxation of strain on the luminescence and the valley polarization properties of large area strictly monolayer (1L)-MoS$_2$, grown on sapphire and SiO$_2$/Si substrates by a microcavity based chemical vapor deposition (CVD) technique. The study shows that the strain as well as the physisorption of air molecules at the sulfur vacancy ($V_S$) sites play key roles in governing the optical quality of CVD grown 1L-MoS$_2$. Removal of air molecules from the $V_S$ sites enhances the relative strength of the A-exciton/trion transition as compared to the broad luminescence (BL) band arising from those defects at low temperatures. It has also been found that such removal helps in improving the valley polarization property of the film. Relaxation of biaxial tensile strain, which has been achieved by post growth transferring of 1L-MoS$_2$ film from the sapphire to a SiO$_2$/Si substrate by a polystyrene assisted transfer process, is also found to be helpful to get back the high polarization character ($\sim$80%) of the valleys. The study further shows that the transfer process not only facilitates the removal of physisorbed air molecules from the $V_S$ sites but also puts in place a long lasting capping layer on MoS$_2$ that shields the film from reacting with air and hence enhances the relative yield of A-exciton/trion transition by suppressing the BL transition. The study thus creates an opportunity to use CVD grown large area 1L-MoS$_2$ for the development of optoelectronic as well as valleytronic devices for practical applications for the future.

Strain-Induced Sulfur Vacancies in Monolayer MoS2

First-Principles Study on the Structural and Electronic Properties of Monolayer MoS2 with S-Vacancy under Uniaxial Tensile Strain

Strain effects on the behavior of isolated and paired sulfur vacancy defects in monolayer MoS 2

Approaching strain limit of two-dimensional MoS2 via chalcogenide substitution

Effect of Strain on the Band Gap of Monolayer MoS$_2$

Strain induced magnetic hysteresis in MoS2 and WS2 monolayers with symmetric double sulfur vacancy defects

Modulation of Gas Adsorption and Magnetic Properties of Monolayer-MoS2 by Antisite Defect and Strain

Biaxial Tensile Strain Enhances Electron Mobility of Monolayer Transition Metal Dichalcogenides

Temperature-Triggered Sulfur Vacancy Evolution in Monolayer MoS2 /Graphene Heterostructures.

Strain Effects on Electronic States and Lattice Vibration of Monolayer MoS2

Strain-engineering in two-dimensional transition metal dichalcogenide alloys

Strain Engineering the Behaviors of Small Molecules over Defective MoS2 Monolayers in the 2H and 1T′ Phases

Strain Relaxation Via Formation of Cracks in Compositionally Modulated Two-Dimensional Semiconductor Alloys

Strain-Enhanced Mobility of Monolayer MoS2

Unravelling the effect of sulfur vacancies on the electronic structure of the MoS 2 crystal.

Charge and Strain Induced Magnetism in Monolayer MoS2 with S Vacancy

Strain and structure heterogeneity in MoS2 atomic layers grown by chemical vapour deposition

Effect of strain and sulfur vacancies on the luminescence and valley polarization properties of CVD grown monolayer MoS$_2$ films

Strain engineering the structures and electronic properties of Janus monolayer transition-metal dichalcogenides

Strain-induced Electronic Structures, Mechanical Anisotropy, and Piezoelectricity of Transition-Metal Dichalcogenide Monolayer CrS2