Vacancy-induced Magnetic Fluctuation and Topological Hall Effect in Zintl Eu2ZnSb2

Lei Zhang,Zan Du,Azizur Rahman,Yihao Wang,Jiangpeng Song,Wei Liu,Gao Min,Chunlan Ma,Jiyu Fan,Li Pi,Yimin Xiong,Y. Zhang
DOI: https://doi.org/10.21203/rs.3.rs-3420119/v1
2023-01-01
Abstract:The outstanding performance of thermoelectric materials is intimately related to complicated electronic band structures that may comprise topological linear dispersion bands. In the thermo-electric material Eu 2 ZnSb 2 , a vacancy-ordering-induced topological electronic transition was predicted theoretically, however, experimental verification is still lacking. This work investigates the exotic magnetism and magneto-transport properties induced by the vacancy-ordering in Eu 2 ZnSb 2 single crystal. Temperature- and field-dependent magnetization reveal an antiferromagnetic (AFM) ground state and highly localized magnetic moments of Eu 2+ ions. The longitudinal resistivity [ ρ xx ( T )] and magnetoresisitivity (MR) unveil the coexistence of underlying ferromagnetic (FM) and antiferromagnetic (AFM) fluctuations caused by vacancies in this system. Furthermore, a rare topological Hall effect (THE) for both above and below the AFM phase transition temperature ( T N ) is observed due to the vacancy-induced topological bands and strong magnetic fluctuations, which experimentally supports the theoretically-predicted vacancy-ordering-induced topological electronic transition under the background of magnetic fluctuation in Eu 2 ZnSb 2 .
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