Vacancy ordering induced topological electronic transition in bulk Eu 2 ZnSb 2

Honghao Yao,Chen Chen,Wenhua Xue,Fengxian Bai,Feng Cao,Yucheng Lan,Xingjun Liu,Yumei Wang,David J Singh,Xi Lin,Qian Zhang,David J. Singh

DOI: https://doi.org/10.1126/sciadv.abd6162

IF: 13.6

2021-02-05

Science Advances

Abstract:Topological electronic structures emerge from order in a high-performance Zintl-phase thermoelectric.

multidisciplinary sciences

What problem does this paper attempt to address?

Hybrid-order topology in unconventional magnets of Eu-based Zintl compounds with surface-dependent quantum geometry

Yufei Zhao,Yiyang Jiang,Hyeonhu Bae,Kamal Das,Yongkang Li,Chao-Xing Liu,Binghai Yan

2024-07-11

Abstract:The exploration of magnetic topological insulators is instrumental in exploring axion electrodynamics and intriguing transport phenomena, such as the quantum anomalous Hall effect. Here, we report that a family of magnetic compounds Eu$_{2n+1}$In$_{2}$(As,Sb)$_{2n+2}$ ($n=0,1,2$) exhibit both gapless Dirac surface states and chiral hinge modes. Such a hybrid-order topology hatches surface-dependent quantum geometry. By mapping the responses into real space, we demonstrate the existence of chiral hinge modes along the $c$ direction, which originate from the half-quantized anomalous Hall effect on two gapped $ac$/$bc$ facets due to Berry curvature, while the unpinned Dirac surface states on the gapless $ab$ facet generate an intrinsic nonlinear anomalous Hall effect due to the quantum metric. When Eu$_{3}$In$_{2}$As$_{4}$ is polarized to the ferromagnetic phase by an external magnetic field, it becomes an ideal Weyl semimetal with a single pair of type-I Weyl points and no extra Fermi pocket. Our work predicts rich topological states sensitive to magnetic structures, quantum geometry-induced transport and topological superconductivity if proximitized with a superconductor.

Materials Science,Mesoscale and Nanoscale Physics
Br‐Vacancies Induced Variable Ranging Hopping Conduction in High‐Order Topological Insulator Bi4Br4

Zixin Gong,Xingyu Lai,Wenjing Miao,Jingyuan Zhong,Zhijian Shi,Huayi Shen,Xinqi Liu,Qiyi Li,Ming Yang,Jincheng Zhuang,Yi Du

DOI: https://doi.org/10.1002/smtd.202400517

IF: 12.4

2024-05-21

Small Methods

Abstract:This work reveals that the origin of the general semiconducting‐like behavior in topological quantum materials (TQM) is the Mott's variable range hopping (VRH) conduction. The formation of defects is identified from a microscopic perspective, and clarifies its influence on the macroscopic electronic structure and transport behavior, establishing a microscopic and macroscopic connection and revealing the VRH behavior caused by point vacancies. The defects have a remarkable influence on the electronic structures and the electric transport behaviors of the matter, providing the additional means to engineering their physical properties. In this work, a comprehensive study on the effect of Br‐vacancies on the electronic structures and transport behaviors in the high‐order topological insulator Bi4Br4 is performed by the combined techniques of the scanning tunneling microscopy (STM), angle‐resolved photoemission spectroscopy (ARPES), and physical properties measurement system along with the first‐principle calculations. The STM results show the defects on the cleaved surface of a single crystal and reveal that the defects are correlated to the Br‐vacancies with the support of the simulated STM images. The role of the Br‐vacancies in the modulation of the band structures has been identified by ARPES spectra and the calculated energy‐momentum dispersion. The relationship between the Br‐vacancies and the semiconducting‐like transport behaviors at low temperature has been established, implying a Mott variable ranging hopping conduction in Bi4Br4. The work not only resolves the unclear transport behaviors in this matter, but also paves a way to modulate the electric conduction path by the defects engineering.

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
Structure, physical properties, and magnetically tunable topological phases in topological semimetal EuCuBi

Xuhui Wang,Boxuan Li,Liqin Zhou,Long Chen,Yulong Wang,Yaling Yang,Ying Zhou,Ke Liao,Hongming Weng,Gang Wang

2023-03-21

Abstract:A single material achieving multiple topological phases can provide potential application for topological spintronics, whereas the candidate materials are very limited. Here, we report the structure, physical properties, and possible emergence of multiple topological phases in the newly discovered, air-stable EuCuBi single crystal. EuCuBi crystallizes in a hexagonal space group P63/mmc (No. 194) in ZrBeSi-type structure with an antiferromagnetic (AFM) ground state below TN = 11.2 K. There is a competition between AFM and ferromagnetic (FM) interactions below TN revealed by electrical resistivity and magnetic susceptibility measurements. With the increasing magnetic field, EuCuBi evolves from the AFM ground state with a small amount of FM component, going through two possible metamagnetic phases, finally reaches the field-induced FM phase. Based on the first-principles calculations, we demonstrate that the Dirac, Weyl, and possible mirror Chern insulator can be achieved in EuCuBi by tuning the temperature and applying magnetic field, making EuCuBi a promising candidate for exploring multiple topological phases.

Materials Science,Strongly Correlated Electrons
Bonding Interactions Can Drive Topological Phase Transitions in a Zintl Antiferromagnetic Insulator

Tanya Berry,Jaime M. Moya,David Smiadak,Scott B. Lee,Sigalit Aharon,Alexandra Zevalkink,Tyrel M. McQueen,Leslie M. Schoop

DOI: https://doi.org/10.1002/adfm.202415610

IF: 19

2024-11-01

Advanced Functional Materials

Abstract:Band Inversions happen in various topological materials. However, the mechanism of band inversion usually involves banding folding effects. Here, the chemical origin of topological phase transition via complex hybridization effects is discussed. Overall, this work paints a picture of a possible magnetic topological insulator via band engineering and explains why Eu‐based Zintl compounds are suitable for the co‐existence of magnetism and topology. While ∼30% of materials are reported to be topological, topological insulators are rare. Magnetic topological insulators (MTI) are even harder to find. Identifying crystallographic features that can host the coexistence of a topological insulating phase with magnetic order is vital for finding intrinsic MTI materials. Thus far, most materials that are investigated for the determination of an MTI are some combination of known topological insulators with a magnetic ion such as MnBi2Te4. Motivated by the recent success of EuIn2As2, the role of chemical pressure on topologically trivial insulator is investigated, Eu5In2Sb6 via Ga substitution. Eu5Ga2Sb6 is predicted to be topological but is synthetically difficult to stabilize. The intermediate compositions between Eu5In2Sb6 and Eu5Ga2Sb6 are observed through theoretical works to explore a topological phase transition and band inversion mechanism. The band inversion mechanism is attributed to changes in Eu–Sb hybridization as Ga is substituted for In due to chemical pressure. Eu5In4/3Ga2/3Sb6 is also synthesized, the highest Ga concentration in Eu5In2‐xGaxSb6, and report the thermodynamic, magnetic, transport, and Hall properties. Overall, the work paints a picture of a possible MTI via band engineering and explains why Eu‐based Zintl compounds are suitable for the co‐existence of magnetism and topology.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Topological electronic structure and spin texture of quasi-one-dimensional higher-order topological insulator Bi4Br4

W. X. Zhao,M. Yang,R. Z. Xu,X. Du,Y. D. Li,K. Y. Zhai,C. Peng,D. Pei,H. Gao,Y. W. Li,L. X. Xu,J. F. Han,Y. Huang,Z. K. Liu,Y. G. Yao,J. C. Zhuang,Y. Du,J. J. Zhou,Y. L. Chen,L. X. Yang

2023-11-06

Abstract:The notion of topological insulators (TIs), characterized by an insulating bulk and conducting topological surface states, can be extended to higher-order topological insulators (HOTIs) hosting gapless modes localized at the boundaries of two or more dimensions lower than the insulating bulk1-5. In this work, by performing high-resolution angle-resolved photoemission spectroscopy (ARPES) measurements with submicron spatial and spin resolutions, we systematically investigate the electronic structure and spin texture of quasi-one-dimensional (1D) HOTI candidate Bi4Br4. In contrast to the bulk-state-dominant spectra on the (001) surface, we observe gapped surface states on the (100) surface, whose dispersion and spin-polarization agree well with our ab initio calculations. Moreover, we reveal in-gap states connecting the surface valence and conduction bands, which is an explicit signature of the existence of hinge states inside the (100) surface gap. Our findings provide compelling evidence for the HOTI phase of Bi4Br4. The identification of the higher-order topological phase will lay the promising prospect of applications based on 1D spin-momentum locked current in electronic and spintronic devices.

Materials Science
Consecutive Topological Phase Transitions and Colossal Magnetoresistance in a Magnetic Topological Semimetal

Feng Du,Lin Yang,Zhiyong Nie,Ninghua Wu,Yong Li,Shuaishuai Luo,Ye Chen,Dajun Su,Michael Smidman,Youguo Shi,Chao Cao,Frank Steglich,Yu Song,Huiqiu Yuan

DOI: https://doi.org/10.1038/s41535-022-00468-0

IF: 6.856

2022-01-01

npj Quantum Materials

Abstract:The combination of magnetic symmetries and electronic band topology provides a promising route for realizing topologically nontrivial quasiparticles, and the manipulation of magnetic structures may enable the switching between topological phases, with the potential for achieving functional physical properties. Here, we report measurements of the electrical resistivity of EuCd 2 As 2 under pressure, which show an intriguing insulating dome at pressures between p c1 ~ 1.0 GPa and p c2 ~ 2.0 GPa, situated between two regimes with metallic transport. The insulating state can be fully suppressed by a small magnetic field, leading to a colossal negative magnetoresistance on the order of 10 5 %, accessible via a modest field of ~ 0.2 T. First-principles calculations reveal that the dramatic evolution of the resistivity under pressure can be attributed to consecutive transitions of EuCd 2 As 2 from a magnetic topological insulator to a trivial insulator, and then to a Weyl semimetal, with the latter resulting from a pressure-induced change in the magnetic ground state. Similarly, the colossal magnetoresistance results from a field-induced polarization of the magnetic moments, transforming EuCd 2 As 2 from a trivial insulator to a Weyl semimetal. These findings underscore weak exchange couplings and weak magnetic anisotropy as ingredients for discovering tunable magnetic topological materials with desirable functionalities.
Exotic Topological Insulator States and Topological Phase Transitions in Sb2se3-Bi2se3 Heterostructures

Qianfan Zhang,Zhiyong Zhang,Zhiyong Zhu,Udo Schwingenschloegl,Yi Cui

DOI: https://doi.org/10.1021/nn2045328

IF: 17.1

2012-01-01

ACS Nano

Abstract:Topological insulator is a new state of matter attracting tremendous interest due to its gapless linear dispersion and spin momentum locking topological states located near the surface. Heterostructures, which have traditionally been powerful in controlling the electronic properties of semiconductor devices, are interesting for topological insulators. Here, we studied the spatial distribution of the topological state in Sb(2)Se(3)-Bi(2)Se(3) heterostructures by first-principle simulation and discovered that an exotic topological state exists. Surprisingly, the state migrates from the nontrivial Bi(2)Se(3) into the trivial Sb(2)Se(3) region and spreads across the entire Sb(2)Se(3) slab, extending beyond the concept of "surface" state while preserving all of the topological surface state characteristics. This unusual topological state arises from the coupling between different materials and the modification of electronic structure near Fermi energy. Our study demonstrates that heterostructures can open up opportunities for controlling the real-space distribution of the topological state and inducing quantum phase transitions between topologically trivial and nontrivial states.
Topological phase transitions in bulk

Stanislav Chadov,Janos Kiss,Jürgen Kübler,Claudia Felser

DOI: https://doi.org/10.48550/arXiv.1209.6249

2012-09-27

Materials Science

Abstract:We consider the analogy between the topological phase transition which occurs as a function of spatial coordinate on a surface of a non-trivial insulator, and the one which occurs in the bulk due to the change of internal parameters (such as crystal field and spin-orbit coupling). In both cases the system exhibits a Dirac cone, which is the universal manifestation of topological phase transition, independently on the type of driving parameters. In particular, this leads to a simple way of determining the topological class based solely on the bulk information even for the systems with translational symmetry broken by atomic disorder or by strong electron correlations. Here we demonstrate this on example of the zinc-blende related semiconductors by means of the {\it ab-initio} fully-relativistic band structure calculations involving the coherent potential approximation (CPA) technique.
Topology-driven Magnetic Quantum Phase Transition in Topological Insulators.

Jinsong Zhang,Cui-Zu Chang,Peizhe Tang,Zuocheng Zhang,Xiao Feng,Kang Li,Li-li Wang,Xi Chen,Chaoxing Liu,Wenhui Duan,Ke He,Qi-Kun Xue,Xucun Ma,Yayu Wang

DOI: https://doi.org/10.1126/science.1230905

2016-01-01

Abstract:The breaking of time reversal symmetry in topological insulators may create previously unknown quantum effects. We observed a magnetic quantum phase transition in Cr-doped Bi2(SexTe1-x)3 topological insulator films grown by means of molecular beam epitaxy. Across the critical point, a topological quantum phase transition is revealed through both angle-resolved photoemission measurements and density functional theory calculations. We present strong evidence that the bulk band topology is the fundamental driving force for the magnetic quantum phase transition. The tunable topological and magnetic properties in this system are well suited for realizing the exotic topological quantum phenomena in magnetic topological insulators.
Superconductivity from buckled-honeycomb-vacancy ordering

Yanpeng Qi,Tianping Ying,Xianxin Wu,Zhuoya Dong,Masato Sasase,Qing Zhang,Weiyan Liu,Masaki Ichihara,Yanhang Ma,Jiangping Hu,Hideo Hosono

DOI: https://doi.org/10.1016/j.scib.2020.12.007

IF: 18.9

2021-02-01

Science Bulletin

Abstract:Vacancies are prevalent and versatile in solid-state physics and materials science. The role of vacancies in strongly correlated materials, however, remains uncultivated until now. Here, we report the discovery of an unprecedented vacancy state forming an extended buckled-honeycomb-vacancy (BHV) ordering in Ir16Sb18. Superconductivity emerges by suppressing the BHV ordering through squeezing of extra Ir atoms into the vacancies or isovalent Rh substitution. The phase diagram on vacancy ordering reveals the superconductivity competes with the BHV ordering. Further theoretical calculations suggest that this ordering originates from a synergistic effect of the vacancy formation energy and Fermi surface nesting with a wave vector of (1/3, 1/3, 0). The buckled structure breaks the crystal inversion symmetry and can mostly suppress the density of states near the Fermi level. The peculiarities of BHV ordering highlight the importance of "correlated vacancies" and may serve as a paradigm for exploring other non-trivial excitations and quantum criticality.

multidisciplinary sciences
Fluctuation-driven, topology-stabilized order in a correlated nodal semimetal

Nathan C. Drucker,Thanh Nguyen,Fei Han,Xi Luo,Nina Andrejevic,Ziming Zhu,Grigory Bednik,Quynh T. Nguyen,Zhantao Chen,Linh K. Nguyen,Travis J. Williams,Matthew B. Stone,Alexander I. Kolesnikov,Songxue Chi,Jaime Fernandez-Baca,Tom Hogan,Ahmet Alatas,Alexander A. Puretzky,David B. Geohegan,Shengxi Huang,Yue Yu,Mingda Li

DOI: https://doi.org/10.48550/arXiv.2103.08489

2023-07-19

Abstract:The interplay between strong electron correlation and band topology is at the forefront of condensed matter research. As a direct consequence of correlation, magnetism enriches topological phases and also has promising functional applications. However, the influence of topology on magnetism remains unclear, and the main research effort has been limited to ground state magnetic orders. Here we report a novel order above the magnetic transition temperature in magnetic Weyl semimetal (WSM) CeAlGe. Such order shows a number of anomalies in electrical and thermal transport, and neutron scattering measurements. We attribute this order to the coupling of Weyl fermions and magnetic fluctuations originating from a three-dimensional Seiberg-Witten monopole, which qualitatively agrees well with the observations. Our work reveals a prominent role topology may play in tailoring electron correlation beyond ground state ordering, and offers a new avenue to investigate emergent electronic properties in magnetic topological materials.

Strongly Correlated Electrons
Intrinsic nanostructure induced ultralow thermal conductivity yields enhanced thermoelectric performance in Zintl phase Eu2ZnSb2

Chen Chen,Zhenzhen Feng,Honghao Yao,Feng Cao,Bing-Hua Lei,Yumei Wang,Yue Chen,David J. Singh,Qian Zhang

DOI: https://doi.org/10.1038/s41467-021-25483-w

IF: 16.6

2021-09-29

Nature Communications

Abstract:Abstract The Zintl thermoelectric phase Eu 2 ZnSb 2 has a remarkable combination of high mobility and low thermal conductivity that leads to good thermoelectric performance. The key feature of this compound is a crystal structure that has a Zn-site with a 50% occupancy. Here we use comparison of experimental thermal conductivity measurements and first principles thermal conductivity calculations to characterize the thermal conductivity reduction. We find that partial ordering, characterized by local order, but Zn-site disorder on longer scales, leads to an intrinsic nanostructuring induced reduction in thermal conductivity, while retaining electron mobility. This provides a direction for identifying Zintl compounds with ultralow lattice thermal conductivity and good electrical conductivity.

multidisciplinary sciences
Z3-vestigial nematic order due to superconducting fluctuations in the doped topological insulators NbxBi2Se3 and CuxBi2Se3

Chang-Woo Cho,Junying Shen,Jian Lyu,Omargeldi Atanov,Qianxue Chen,Seng Huat Lee,Yew San Hor,Dariusz Jakub Gawryluk,Ekaterina Pomjakushina,Marek Bartkowiak,Matthias Hecker,Jörg Schmalian,Rolf Lortz

DOI: https://doi.org/10.1038/s41467-020-16871-9

2020-06-16

Abstract:A state of matter with a multi-component order parameter can give rise to vestigial order. In the vestigial phase, the primary order is only partially melted, leaving a remaining symmetry breaking behind, an effect driven by strong classical or quantum fluctuations. Vestigial states due to primary spin and charge-density-wave order have been discussed in iron-based and cuprate materials. Here we present the observation of a partially melted superconductivity in which pairing fluctuations condense at a separate phase transition and form a nematic state with broken Z3, i.e., three-state Potts-model symmetry. Thermal expansion, specific heat and magnetization measurements of the doped topological insulators NbxBi2Se3 and CuxBi2Se3 reveal that this symmetry breaking occurs at [Formula: see text] above [Formula: see text], along with an onset of superconducting fluctuations. Thus, before Cooper pairs establish long-range coherence at Tc, they fluctuate in a way that breaks the rotational invariance at Tnem and induces a crystalline distortion.
Optical bulk-boundary dichotomy in a quantum spin Hall insulator

Junfeng Han,Pengcheng Mao,Hailong Chen,Jia-Xin Yin,Maoyuan Wang,Dongyun Chen,Yongkai Li,Jingchuan Zheng,Xu Zhang,Dashuai Ma,Qiong Ma,Zhi-Ming Yu,Jinjian Zhou,Cheng-Cheng Liu,Yeliang Wang,Shuang Jia,Yuxiang Weng,Wende Xiao,Yugui Yao,M. Zahid Hasan

DOI: https://doi.org/10.1016/j.scib.2023.01.038

IF: 18.9

2023-02-26

Science Bulletin

Abstract:The bulk-boundary correspondence is a critical concept in topological quantum materials. For instance, a quantum spin Hall insulator features a bulk insulating gap with gapless helical boundary states protected by the underlying Z2 topology. However, the bulk-boundary dichotomy and distinction are rarely explored in optical experiments, which can provide unique information about topological charge carriers beyond transport and electronic spectroscopy techniques. Here, we utilize mid-infrared absorption micro-spectroscopy and pump–probe micro-spectroscopy to elucidate the bulk-boundary optical responses of Bi4Br4, a recently discovered room-temperature quantum spin Hall insulator. Benefiting from the low energy of infrared photons and the high spatial resolution, we unambiguously resolve a strong absorption from the boundary states while the bulk absorption is suppressed by its insulating gap. Moreover, the boundary absorption exhibits strong polarization anisotropy, consistent with the one-dimensional nature of the topological boundary states. Our infrared pump–probe microscopy further measures a substantially increased carrier lifetime for the boundary states, which reaches one nanosecond scale. The nanosecond lifetime is about one to two orders longer than that of most topological materials and can be attributed to the linear dispersion nature of the helical boundary states. Our findings demonstrate the optical bulk-boundary dichotomy in a topological material and provide a proof-of-principal methodology for studying topological optoelectronics.

multidisciplinary sciences
Colossal Magnetoresistance and Topological Phase Transition in EuZn2As2

Shuaishuai Luo,Yongkang Xu,Feng Du,Lin Yang,Yuxin Chen,Chao Cao,Yu Song,Huiqiu Yuan

DOI: https://doi.org/10.1103/physrevb.108.205140

IF: 3.7

2023-01-01

Physical Review B

Abstract:We report electrical transport properties of EuZn2As2 under pressures up to 26 GPa. At ambient pressure, EuZn2As2 exhibits an insulating ground state and a approximate to 200% negative magnetoresistance (MR) at B = 5 T and T = 2 K. For pressures up to similar to 3 GPa, the system becomes more insulating, accompanied by a dramatic enhancement of the MR (B = 5 T and T = 2 K) up to approximate to 14 000%. Further increase of pressure drives EuZn2As2 into a metallic state without significant MR. Resistivity measurements under field reveal ferromagnetic characteristics associated with the metallic ground state in pressurized EuZn2As2, distinct from the antiferromagnetic state realized at ambient pressure. We propose the pressure-induced insulator-metal transition and the colossal MR both originate from transformations of the magnetic ground state that strongly reconstruct the electronic structure. This view is supported by first-principles calculations, which further reveal that while antiferromagnetic EuZn2As2 is a trivial insulator, spin-polarized/ferromagnetic EuZn2As2 is a Weyl metal, indicting that the insulator-metal transition in EuZn2As2 is also a topological phase transition. These pressure- and field-induced topological phase transitions in EuZn2As2 are remarkably similar to behaviors reported in EuCd2As2, suggesting a common origin. Our findings demonstrate that spin-orbit coupling, electronic topology, and particularly the magnetic ground state play key roles in determining the physical properties of Eu-based magnetic topological materials.
Giant and Reversible Electronic Structure Evolution in a Magnetic Topological Material EuCd2As2

Yang Wang,Cong Li,Taimin Miao,Shuai Zhang,Yong Li,Liqin Zhou,Meng Yang,Chaohui Yin,Yongqing Cai,Chunyao Song,Hailan Luo,Hao Chen,Hanqing Mao,Lin Zhao,Hanbin Deng,Yingkai Sun,Changjiang Zhu,Fengfeng Zhang,Feng Yang,Zhimin Wang,Shenjin Zhang,Qinjun Peng,Shuheng Pan,Youguo Shi,Hongming Weng,Tao Xiang,Zuyan Xu,X. J. Zhou

DOI: https://doi.org/10.1103/physrevb.106.085134

2022-01-01

Abstract:The electronic structure and the physical properties of quantum materials can be significantly altered by charge carrier doping and magnetic state transition. Here we report a discovery of a giant and reversible electronic structure evolution with doping in a magnetic topological material. By performing high-resolution angle-resolved photoemission measurements on EuCd2As2,we found that a huge amount of hole doping can be introduced into the sample surface due to surface absorption. The electronic structure exhibits a dramatic change with the hole doping which can not be described by a rigid band shift. Prominent band splitting is observed at high doping which corresponds to a doping-induced magnetic transition at low temperature (below -15 K) from an antiferromagnetic state to a ferromagnetic state. These results have established a detailed electronic phase diagram of EuCd2As2 where the electronic structure and the magnetic structure change systematically and dramatically with the doping level. They further suggest that the transport, magnetic and topological properties of EuCd2As2 can be greatly modified by doping. These work will stimulate further investigations to explore for new phenomena and properties in doping this magnetic topological material.
Zeeman-field-induced Valley-Dependent Topological Phase Transitions on the Surface of a Topological Crystalline Insulator SnTe

Wei Luo,W. Y. Deng,L. Sheng

DOI: https://doi.org/10.1088/1367-2630/18/5/053020

2016-01-01

New Journal of Physics

Abstract:Mirror-symmetric (001) surfaces of a topological crystalline insulator SnTe host an even number of Dirac cone structures of surface states. A Zeeman field generically gaps the surface states, leading to a 2D topological insulator. By symmetry analysis and calculation of spin-Chern numbers, we show that with varying the direction of the Zeeman field, the system displays a rich phase diagram, consisting of a quantum anomalous Hall (QAH) phase with Chern number C = 2, a QAH phase with C= 1, a quantum pseudospin Hall phase, and an unusual insulator phase. In the QAH phase with C= 1 and the insulator phase, the two valleys X and Y are in different topological states. These valley-dependent topological phases provide a new pathway to potential applications of valleytronics.
Unconventional transverse transport above and below the magnetic transition temperature in Weyl semimetal EuCd$_2$As$_2$

Y. Xu,L. Das,J. Z. Ma,C. J. Yi,S. M. Nie,Y. G. Shi,A. Tiwari,S. S. Tsirkin,T. Neupert,M. Medarde,M. Shi,J. Chang,T. Shang

DOI: https://doi.org/10.1103/PhysRevLett.126.076602

2021-01-28

Abstract:As exemplified by the growing interest in the quantum anomalous Hall effect, the research on topology as an organizing principle of quantum matter is greatly enriched from the interplay with magnetism. In this vein, we present a combined electrical and thermoelectrical transport study on the magnetic Weyl semimetal EuCd$_2$As$_2$. Unconventional contribution to the anomalous Hall and anomalous Nernst effects were observed both above and below the magnetic transition temperature of EuCd$_2$As$_2$, indicating the existence of significant Berry curvature. EuCd$_2$As$_2$ represents a rare case in which this unconventional transverse transport emerges both above and below the magnetic transition temperature in the same material. The transport properties evolve with temperature and field in the antiferromagnetic phase in a different manner than in the paramagnetic phase, suggesting different mechanisms to their origin. Our results indicate EuCd$_2$As$_2$ is a fertile playground for investigating the interplay between magnetism and topology, and potentially a plethora of topologically nontrivial phases rooted in this interplay.

Strongly Correlated Electrons
Discrete Scale Invariance of the Quasi-Bound States at Atomic Vacancies in a Topological Material

Zhibin Shao,Shaojian Li,Yanzhao Liu,Zi Li,Huichao Wang,Qi Bian,Jiaqiang Yan,David Mandrus,Haiwen Liu,Ping Zhang,X. C. Xie,Jian Wang,Minghu Pan

DOI: https://doi.org/10.1073/pnas.2204804119

2022-01-01

Abstract:Recently, log-periodic quantum oscillations have been detected in the topological materials zirconium pentatelluride (ZrTe5) and hafnium pentatelluride (HfTe5), displaying an intriguing discrete scale invariance (DSI) characteristic. In condensed materials, the DSI is considered to be related to the quasi-bound states formed by massless Dirac fermions with strong Coulomb attraction, offering a feasible platform to study the long-pursued atomic-collapse phenomenon. Here, we demonstrate that a variety of atomic vacancies in the topological material HfTe5 can host the geometric quasi-bound states with a DSI feature, resembling an artificial supercritical atom collapse. The density of states of these quasi-bound states is enhanced, and the quasi-bound states are spatially distributed in the "orbitals" surrounding the vacancy sites, which are detected and visualized by low-temperature scanning tunneling microscope/spectroscopy. By applying the perpendicular magnetic fields, the quasi-bound states at lower energies become wider and eventually invisible; meanwhile, the energies of quasi-bound states move gradually toward the Fermi energy (EF). These features are consistent with the theoretical prediction of a magnetic field-induced transition from supercritical to subcritical states. The direct observation of geometric quasi-bound states sheds light on the deep understanding of the DSI in quantum materials.

Vacancy ordering induced topological electronic transition in bulk Eu 2 ZnSb 2

Hybrid-order topology in unconventional magnets of Eu-based Zintl compounds with surface-dependent quantum geometry

Br‐Vacancies Induced Variable Ranging Hopping Conduction in High‐Order Topological Insulator Bi4Br4

Structure, physical properties, and magnetically tunable topological phases in topological semimetal EuCuBi

Bonding Interactions Can Drive Topological Phase Transitions in a Zintl Antiferromagnetic Insulator

Topological electronic structure and spin texture of quasi-one-dimensional higher-order topological insulator Bi4Br4

Consecutive Topological Phase Transitions and Colossal Magnetoresistance in a Magnetic Topological Semimetal

Exotic Topological Insulator States and Topological Phase Transitions in Sb2se3-Bi2se3 Heterostructures

Topological phase transitions in bulk

Topology-driven Magnetic Quantum Phase Transition in Topological Insulators.

Superconductivity from buckled-honeycomb-vacancy ordering

Fluctuation-driven, topology-stabilized order in a correlated nodal semimetal

Intrinsic nanostructure induced ultralow thermal conductivity yields enhanced thermoelectric performance in Zintl phase Eu2ZnSb2

Z3-vestigial nematic order due to superconducting fluctuations in the doped topological insulators NbxBi2Se3 and CuxBi2Se3

Optical bulk-boundary dichotomy in a quantum spin Hall insulator

Colossal Magnetoresistance and Topological Phase Transition in EuZn2As2

Giant and Reversible Electronic Structure Evolution in a Magnetic Topological Material EuCd2As2

Zeeman-field-induced Valley-Dependent Topological Phase Transitions on the Surface of a Topological Crystalline Insulator SnTe

Unconventional transverse transport above and below the magnetic transition temperature in Weyl semimetal EuCd$_2$As$_2$

Discrete Scale Invariance of the Quasi-Bound States at Atomic Vacancies in a Topological Material