Abstract:Nonvolatile memories are in strong demand due to the desire for miniaturization, high-speed storage, and low energy consumption to fulfill the rapid developments of big data, the Internet of Things, and artificial intelligence. Hafnia (HfO2)-based materials have attracted significant interest due to the advantages of complementary-metal-oxide-semiconductor (CMOS) compatibility, large coercive voltage, and superior ferroelectricity at an ultra-thin thickness. The comparable ferroelectricity to that of traditional perovskite materials and size advantage of HfO2 result in fascinating storage performance, which can be readily applicable to the fields of integrated non-volatile memories. This Review provides a comprehensive overview of recent developments in HfO2-based ferroelectrics with attention to the origin of ferroelectricity, performance modulation, and recent achievements in the material. Moreover, potential solutions to existing challenges associated with the materials are discussed in detail, including the wake-up effect, long-term fatigue behavior, and imprint challenges, which pave the way for obtaining HfO2-based ferroelectric materials and devices with long service life and high stability. Finally, the range of potential applications for these fascinating new materials is presented and summarized, which include non-volatile memories and neuromorphic systems. This Review intends to present the state-of-the-art HfO2-based ferroelectrics and to highlight the current challenges, possible applications, and future opportunities and can act as an update for recent developments in these intriguing materials and provide guidance for future researchers in the design and optimization of HfO2-based ferroelectric materials and devices.

2D Ferroic Materials for Nonvolatile Memory Applications

Ferromagnetic and Ferroelectric Two-Dimensional Materials for Memory Application

HfO2-based Ferroelectrics: from Enhancing Performance, Material Design, to Applications

Memory and Synaptic Devices Based on Emerging 2D Ferroelectricity

Recent Progress on Two-Dimensional Ferroelectrics: Material Systems and Device Applications

Challenges and Recent Advances in HfO2-based Ferroelectric Films for Non-Volatile Memory Applications

Ferroelectricity Based Memory Devices: New-Generation of Materials and Applications

Ferroelectric memory based on two-dimensional materials for neuromorphic computing

Ferroelectric Memory Based on Nanostructures

2D ferroelectrics and ferroelectrics with 2D: materials and device prospects

HfO2-based Ferroelectric Thin Film and Memory Device Applications in the Post-Moore Era: A Review.

Wurtzite and fluorite ferroelectric materials for electronic memory

Two-dimensional Van Der Waals Ferroelectric Field-Effect Transistors Toward Nonvolatile Memory and Neuromorphic Computing

Two‐dimensional In2Se3: A Rising Advanced Material for Ferroelectric Data Storage

Ferroelectric Control of Electron Half-Metallicity in A-type Antiferromagnets and Its Application to Nonvolatile Memory Devices

Recent Progress of Non-Volatile Memory Devices Based on Two-Dimensional Materials

High-Performance C 60 Coupled Ferroelectric Enhanced MoS 2 Nonvolatile Memory

Ferroelectricity in Covalently Functionalized Two-dimensional Materials: Integration of High-mobility Semiconductors and Nonvolatile Memory.

Recent Progress and Applications of HfO2-Based Ferroelectric Memory

Recent Progress on Integrating Two-Dimensional Materials with Ferroelectrics for Memory Devices and Photodetectors

Emerging 2D Ferroelectric Devices for In‐Sensor and In‐Memory Computing