Effect of Nb5+ Doping on Microwave Dielectric Properties of MgTa2O6 Ceramic

Liang Shi,Cheng Liu,Huaiwu Zhang

DOI: https://doi.org/10.54097/hset.v43i.7402

2023-01-01

Abstract:As the main carrier for microwave circuits, microwave dielectric ceramics are receiving a lot of attention as the main carrier for the current 5G and pre-developed 6G communication technologies. A series of Nb5+ doped MgTa2O6 ceramics were synthesized by the solid-state reaction method X-ray diffraction confirmed that a single tetragonal structure can be formed when the doping amount is lower than 0.03, a heterogeneous structure of tetragonal and orthorhombic crystal structure is formed when the doping amount is lower than 0.15, and the tetragonal structure is completely transformed into orthorhombic structure when the doping exceeds 0.15. SEM results also show the transformation process of the grains of tetragonal structure to orthorhombic structure. The optimum microwave dielectric properties were obtained for 9% Nb5+ doped samples: εr = 24, Q×f = 71,000 GHz (at 8.9 GHz), TCF = 15 ppm/oC.