High-Performance Broadband Si/Zno Nanorods Array Heterojunction Photodetector Based on Interface-Enhanced Photo-Thermo-Electrical Coupling Effect

Weizhuo Yu,Lanzhong Hao,Fuhai Guo,Mingcong Zhang,Siqi Li,Bing Hu,Bo Zhang,Yunjie Liu
DOI: https://doi.org/10.1016/j.optmat.2023.114752
IF: 3.754
2024-01-01
Optical Materials
Abstract:ZnO-based photodetectors are of great significance to military early warning and environmental detection. However, it is challenging to detect weak signals in a broad spectral range due to the nature of wide band gap and high background carriers, seriously limiting further practical application. In this work, large-area of uniform C-axis oriented ZnO nanorod array films were grown on Si substrates via sputtering technique, and Si/ZnO heterojunction photodetectors were fabricated. Because of the nanorod array structure, built-in electrical field and the enhanced pyro-phototronic coupling effect at the heterojunction interface, the fabricated Si/ZnO photodetectors exhibited excellent broadband photoresponse behaviors in the vast range from the ultraviolet to the near-infrared (355-1550 nm) under zero external bias. Especially, the device shows a significant enhancement ability to ultralow laser power (~500 nW/cm2) with a high responsivity value of 550.6 mA/W and the great optical detectivity of 7.7 × 1012 cm Hz1/2 W-1, which is ~1-2 orders of magnitude larger than others. These results supply an innovative strategy to develop high-performance ZnO-based photoelectric devices, and it also promotes the knowledge of interfacial coupling effect in heterojunction systems.
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