Abstract:Magnetic topological insulators in the tetradymite family, such as Cr/V doped Bi2Se3, Bi2Te3, Sb2Te3, and their ternary compounds, provide a new route for realizing the novel time-reversal symmetry-breaking physics [1, 2]. To effectively manipulate these versatile quantum states, various heterostructures are demonstrated by utilizing the unique Néel order in an antiferromagnet CrSb and the topological order in a magnetic topological insulator Cr-doped (Bi,Sb)2Te3 [3-5] grown by molecular beam epitaxy. It is shown that emergent interfacial magnetic interactions can be tailored through deliberate artificial structural engineering. By investigating bilayers, trilayers, and superlattices made of these two components, interfacial exchange coupling and antiferromagnetic exchange coupling were shown to affect the topological magnetism as mediated by the massive Dirac fermions. The relationship of magnetic spin textures of the antiferromagnet to that of the magnetic topological insulator was further explored through polarized neutron reflectometry/diffraction, magneto-electrical transport measurements as well as the control of the mass of Dirac fermions by using different Cr doping concentrations. From these studies, the antiferromagnet is shown to be an efficient interfacial- and interlayer- exchange coupling layer for the massive Dirac fermions of the magnetic topological insulator, which additionally gives rise to a giant enhancement in magnetic ordering. This work provides a new framework for new topological antiferromagnetic spintronics. *The work was in part supported by the SHINES Center, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Basic Energy Sciences under Award # S000686, National Science Foundation, Army Research Office program under contract 15-1-10561, TANMS, FAME Center, and a Semiconductor Research Corporation program sponsored by MARCO and DARPA. References: [1] Y. L. Chen et al., Science 329, 659 (2010). [2] X.-L. Qi, T. L. Hughes, and S.-C. Zhang, Physical Review B 78, 195424 (2008). [3] X. Kou et al., Nature Communications 6, 8474 (2015). [4] X. Kou et al., Physical Review Letters 113, 137201 (2014). [5] Y. Fan et al., Nature Materials 13, 699 (2014).

Facet-dependent Electronic Quantum Diffusion in the High-Order Topological Insulator Bi4Br4

Topological electronic structure and spin texture of quasi-one-dimensional higher-order topological insulator Bi4Br4

Topological electronic structure and spin texture of quasi-one-dimensional higher-order topological insulator Bi 4 Br 4

Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi 2 Se 3

Symmetry-Constrained Reorganization Of Dirac Cones In Topological Insulators By Surface Modification

Universal gapless Dirac cone and tunable topological states in (MnBi$_2$Te$_4$)$_m$(Bi$_2$Te$_3$)$_n$ heterostructures

Tunable Dirac Fermion Dynamics in Topological Insulators

Room-Temperature Topological Phase Transition in Quasi-One-Dimensional Material Bi_4I_4

(Invited) Towards Topological Antiferromagnetic Spintronics

Large-Gap Quantum Spin Hall State and Temperature-Induced Lifshitz Transition in Bi4Br4

Massive topological edge channels in three-dimensional topological materials induced by extreme surface anisotropy

Experimental Observation of Dual Magnetic States in Topological Insulators

Weak Anti-localization and Quantum Oscillations of Surface States in Topological Insulator Bi2Se2Te

Aharonov-Bohm interference in topological insulator nanoribbons

Topology-driven Magnetic Quantum Phase Transition in Topological Insulators.

Surface-State-Dominated Transport in Crystals of the Topological Crystalline Insulator In-Doped Pb1-X Snxte

Hidden non-collinear spin-order induced topological surface states

Hybridization-induced gapped and gapless states on the surface of magnetic topological insulators

Observation of the Topologically Originated Edge States in large-gap Quasi-One-Dimensional a-Bi_4Br_4

Zeeman effect on surface electron transport in topological insulator Bi2Se3 nanoribbons

Approaching a Minimal Topological Electronic Structure in Antiferromagnetic Topological Insulator MnBi2Te4 Via Surface Modification