Abstract:An efficient dendrite‐function‐like negative‐differential‐resistance (NDR) neuron is proposed for the first time. By co‐integrating electrochemicalrandom‐access memory (ECRAM) and ionic regulation, the non‐ideality of devicesis mitigated and it can also be trained to enhance neural network performancefor edge learning. Finally, the NDR neuron can work synergistically with 1T1R arrays to achieve full hardware implementation of neural networks. Computing‐in‐memory (CIM) architecture inspired by the hierarchy of human brain is proposed to resolve the von Neumann bottleneck and boost acceleration of artificial intelligence. Whereas remarkable progress has been achieved for CIM, making further improvements in CIM performance is becoming increasingly challenging, which is mainly caused by the disparity between rapid evolution of synaptic arrays and relatively slow progress in building efficient neuronal devices. Specifically, dedicated efforts are required toward developments of more advanced activation units in terms of both optimized algorithms and innovative hardware implementations. Here a novel bio‐inspired dendrite function‐like neuron based on negative‐differential‐resistance (NDR) behavior is reported and experimentally demonstrates this design as a more efficient neuron. By integrating electrochemical random‐access memory (ECRAM) with ionic regulation, the tunable NDR neuron can be trained to enhance neural network performances. Furthermore, based on a high‐density RRAM chip, fully hardware implementation of CIM is experimentally demonstrated by integrating NDR neuron devices with only a 1.03% accuracy loss. This work provides 516 × and 1.3 × 105 × improvements on LAE (Latency‐Area‐Energy) property, compared to the digital and analog CMOS activation circuits, respectively. With device‐algorithm co‐optimization, this work proposes a compact and energy‐efficient solution that pushes CIM‐based neuromorphic computing into a new paradigm.

Hidden-ROM

Hidden-ROM: A Compute-in-ROM Architecture to Deploy Large-Scale Neural Networks on Chip with Flexible and Scalable Post-Fabrication Task Transfer Capability

YOLoC: DeploY Large-Scale Neural Network by ROM-based Computing-in-Memory using ResiduaL Branch on a Chip

Modeling and Benchmarking Computing-in-Memory for Design Space Exploration.

Computing-in-memory Circuits and Cross-Layer Integrated Design and Optimization: from SRAM to FeFET

A 28nm 8928Kb/mm 2 -Weight-Density Hybrid SRAM/ROM Compute-in-Memory Architecture Reducing >95% Weight Loading from DRAM.

Cramming More Weight Data Onto Compute-in-Memory Macros for High Task-Level Energy Efficiency Using Custom ROM with 3984-Kb/mm$^{2}$ Density in 65-Nm CMOS

SPARE: Spiking Networks Acceleration Using CMOS ROM-Embedded RAM as an In-Memory-Computation Primitive

Architecture-circuit-technology Co-Optimization for Resistive Random Access Memory-Based Computation-in-memory Chips

33.1 A 74 TMACS/W CMOS-RRAM Neurosynaptic Core with Dynamically Reconfigurable Dataflow and In-situ Transposable Weights for Probabilistic Graphical Models.

Enabling RRAM-Based Brain-Inspired Computation by Co-design of Device, Circuit, and System

TL-nvSRAM-CIM: Ultra-High-Density Three-Level ReRAM-Assisted Computing-in-nvSRAM with DC-Power Free Restore and Ternary MAC Operations

Resistive Memory‐Based In‐Memory Computing: From Device and Large‐Scale Integration System Perspectives

Intelligent Computing with RRAM

Modeling-Based Design of Memristive Devices for Brain-Inspired Computing

A Compact Model of Analog RRAM for Neuromorphic Computing System Design

Fully Hardware Memristive Neuromorphic Computing Enabled by the Integration of Trainable Dendritic Neurons and High‐Density RRAM Chip

CREAM: Computing in ReRAM-Assisted Energy- and Area-Efficient SRAM for Reliable Neural Network Acceleration.

15.3 A 351TOPS/W and 372.4GOPS Compute-in-Memory SRAM Macro in 7nm FinFET CMOS for Machine-Learning Applications

CLEAR: a Full-Stack Chip-in-loop Emulator for Analog RRAM Based Computing-in-memory System

A compute-in-memory chip based on resistive random-access memory