Light-emitting devices based on atomically thin MoSe 2
Xinyu Zhang,Xuewen Zhang,Hanwei Hu,Vanessa Li Zhang,Weidong Xiao,Guangchao Shi,Jingyuan Qiao,Nan Huang,Ting Yu,Jingzhi Shang
DOI: https://doi.org/10.1088/1674-4926/45/4/041701
2024-04-27
Journal of Semiconductors
Abstract:Atomically thin MoSe 2 layers, as a core member of the transition metal dichalcogenides (TMDs) family, benefit from their appealing properties, including tunable band gaps, high exciton binding energies, and giant oscillator strengths, thus providing an intriguing platform for optoelectronic applications of light-emitting diodes (LEDs), field-effect transistors (FETs), single-photon emitters (SPEs), and coherent light sources (CLSs). Moreover, these MoSe 2 layers can realize strong excitonic emission in the near-infrared wavelengths, which can be combined with the silicon-based integration technologies and further encourage the development of the new generation technologies of on-chip optical interconnection, quantum computing, and quantum information processing. Herein, we overview the state-of-the-art applications of light-emitting devices based on two-dimensional MoSe 2 layers. Firstly, we introduce recent developments in excitonic emission features from atomically thin MoSe 2 and their dependences on typical physical fields. Next, we focus on the exciton-polaritons and plasmon-exciton polaritons in MoSe 2 coupled to the diverse forms of optical microcavities. Then, we highlight the promising applications of LEDs, SPEs, and CLSs based on MoSe 2 and their heterostructures. Finally, we summarize the challenges and opportunities for high-quality emission of MoSe 2 and high-performance light-emitting devices.
physics, condensed matter