Raman‐Active Interlayer Phonons and Moiré Phonons in Twisted Thin‐Layer MoTe2

Youxuan Wu,Shiyuan Wang,Chuoqi Chen,Cong Zhou,Kun Chen,Jian Zhou,Zhi Wang,Ya-Qing Bie,Shaozhi Deng
DOI: https://doi.org/10.1002/adom.202301747
IF: 9
2024-01-01
Advanced Optical Materials
Abstract:A wide range of artificially twist-stacked van der Waals materials offer versatile building blocks for quantum optoelectronic devices. Among these, twisted bilayer MoTe2 has excellent optical properties in the near-infrared range and can be integrated with silicon photonics. While recent studies mainly focus on the emission properties in twisted bilayer MoTe2, a comprehensive investigation of how Moir & eacute; superlattice affects phonon modes in twisted thin-layer MoTe2 remains unexplored. These phonon modes can serve as indicators of stacking configuration and interface uniformity. Here, a series of twisted bilayer and tetralayer MoTe2 with precisely controlled twist angles ranging from 0 degrees to 60 degrees are prepared. Using polarization-dependent low-frequency Raman spectroscopy, the evolution of interlayer phonon modes at different twist angles is identified. Additionally, a range of acoustic phonon modes activated by Moir & eacute; potentials in both twisted bilayer MoTe2 and twisted tetralayer MoTe2 are observed and analyzed. The findings provide experimental evidence of the interlayer phonon coupling and Moir & eacute; phonons in MoTe2, offering insights for the future development of near-infrared optoelectronic devices based on twisted thin-layer MoTe2.
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