Abstract:A quantum anomalous Hall (QAH) state is a two-dimensional topological insulating state that has a quantized Hall resistance of h/(Ce2) and vanishing longitudinal resistance under zero magnetic field (where h is the Planck constant, e is the elementary charge, and the Chern number C is an integer)1,2. The QAH effect has been realized in magnetic topological insulators3–9 and magic-angle twisted bilayer graphene10,11. However, the QAH effect at zero magnetic field has so far been realized only for C = 1. Here we realize a well quantized QAH effect with tunable Chern number (up to C = 5) in multilayer structures consisting of alternating magnetic and undoped topological insulator layers, fabricated using molecular beam epitaxy. The Chern number of these QAH insulators is determined by the number of undoped topological insulator layers in the multilayer structure. Moreover, we demonstrate that the Chern number of a given multilayer structure can be tuned by varying either the magnetic doping concentration in the magnetic topological insulator layers or the thickness of the interior magnetic topological insulator layer. We develop a theoretical model to explain our experimental observations and establish phase diagrams for QAH insulators with high, tunable Chern number. The realization of such insulators facilitates the application of dissipationless chiral edge currents in energy-efficient electronic devices, and opens up opportunities for developing multi-channel quantum computing and higher-capacity chiral circuit interconnects. The number of edge channels in quantum anomalous Hall insulators is controlled by varying either the magnetic dopant concentration or the interior spacer layer thickness, yielding Chern numbers up to 5.

Topological Junctions in High-Chern-number Quantum Anomalous Hall Systems

Quantum Anomalous/valley Hall Effect and Tunable Quantum State in Hydrogenated Arsenene Decorated with a Transition Metal

Topological Materials: Quantum Anomalous Hall System

Chern Number Tunable Quantum Anomalous Hall Effect in Compensated Antiferromagnets

Anomalous Fraunhofer-like patterns in quantum anomalous Hall Josephson junction

Tuning the Chern number in quantum anomalous Hall insulators

Spin-Chirality-Driven Quantum Anomalous and Quantum Topological Hall Effects in Chiral Magnets

Anomalous Fraunhofer-like Patterns in Quantum Anomalous Hall Josephson Junctions

Rational Design Principles of the Quantum Anomalous Hall Effect in Superlatticelike Magnetic Topological Insulators

Unveiling the Chirality of the Quantum Anomalous Hall Effect

Quantum Anomalous Hall Effect With Tunable Chern Number In Magnetic Topological Insulator Film

Rational design principles of quantum anomalous Hall effect from superlattice-like magnetic topological insulators

Quantum Anomalous Hall Effects Controlled by Chiral Domain Walls

Scale-invariant Quantum Anomalous Hall Effect in Magnetic Topological Insulators Beyond the Two-Dimensional Limit.

Tuning the Number of Chiral Edge Channels in a Fixed Quantum Anomalous Hall System

Non-Majorana Origin of the Half-Quantized Conductance Plateau in Quantum Anomalous Hall Insulator and Superconductor Hybrid Structures

Quantum Anomalous Hall Effect in 2D Organic Topological Insulators.

Tunable quantum anomalous hall effects in ferromagnetic van der Waals heterostructures

Quasi-one-dimensional Quantum Anomalous Hall Systems As New Platforms for Scalable Topological Quantum Computation

Creation of chiral interface channels for quantized transport in magnetic topological insulator multilayer heterostructures

Metallic Quantized Anomalous Hall Effect without Chiral Edge States