Enhancing LiAlOX synaptic performance by reducing the Schottky barrier height for deep neural network applications

Yaoyao Fu,Boyi Dong,Wan-Ching Su,Chih‐Yang Lin,Kuan‐Ju Zhou,Ting–Chang Chang,Fuwei Zhuge,Yang Li,Yuhui He,Bin Gao,Xiangshui Miao

DOI: https://doi.org/10.1039/d0nr04782a

IF: 6.7

2020-01-01

Nanoscale

Abstract:The synaptic behaviors of LiAlOX devices are optimized by lowering the Schottky barrier height.

What problem does this paper attempt to address?

Enhancing Lialox Synaptic Performance By Reducing The Schottky Barrier Height For Deep Neural Network Applications

Yaoyao Fu,Boyi Dong,Wan-Ching Su,Chih-Yang Lin,Kuan-Ju Zhou,Ting-Chang Chang,Fuwei Zhuge,Yi Li,Yuhui He,Bin Gao,Xiang-Shui Miao

DOI: https://doi.org/10.1039/d0nr04782a

IF: 6.7

2020-01-01

Nanoscale

Abstract:Although good performance has been reported in shallow neural networks, the application of memristor synapses towards realistic deep neural networks has met more stringent requirements on the synapse properties, particularly the high precision and linearity of the synaptic analog weight tuning. In this study, a LiAlOX memristor synapse was fabricated and optimized to address these demands. By delicately tuning the initial conductance states, 120-level continuously adjustable conductance states were obtained and the nonlinearity factor was substantially reduced from 8.96 to 0.83. The significant enhancements were attributed to the reduced Schottky barrier height (SBH) between the filament tip and the electrode, which was estimated from the measured I-V curves. Furthermore, a deep neural network for realistic action recognition task was constructed, and the recognition accuracy was found to be increased from 15.1% to 91.4% on the Weizmann video dataset by adopting the above-described device optimization method.
Photonic Synapses with Ultra‐Low Energy Consumption Based on Vertical Organic Field‐Effect Transistors

Tianqi Chen,Xin Wang,Dandan Hao,Shilei Dai,Qingqing Ou,Junyao Zhang,Jia Huang

DOI: https://doi.org/10.1002/adom.202002030

IF: 9

2021-01-01

Advanced Optical Materials

Abstract:Artificial synapses have shown great potential in the research of artificial intelligence and brain-like computing. Artificial synaptic devices based on vertical organic field-effect transistors (VOFETs) exhibit shorter carrier transmission distances and more stable source-drain currents than conventional planar organic transistors due to their smaller channel lengths. By taking advantage of the vertical structure, low working voltage can be achieved. Here, vertical synaptic devices with working voltage as low as 10 mu V and ultra-low power consumption (approximate to 1.3 fJ per spike) are proposed. VOFET-based artificial photonic synaptic devices can successfully simulate typical synaptic behavior, including excitatory post-synaptic current, short-term plasticity, and long-term plasticity. Furthermore, VOFET arrays are demonstrated to enable image contrast enhancement function. This work provides a new approach for the realization of artificial synapses through a simple manufacturing process.
Nanostructured CuAlO2@ZnO Optoelectronic Device for Artificial Synaptic Applications

Chunmei Li,Nasir Ilyas,Jinyong Wang,Yanan Li,Haolin Luo,Dongyang Li,Deen Gu,Fucai Liu,Yadong Jiang,Wei Li

DOI: https://doi.org/10.1016/j.apsusc.2022.155682

IF: 6.7

2023-01-01

Applied Surface Science

Abstract:Developing a neuromorphic system beyond conventional von Neumann’s architecture is necessary for future artificial intelligence applications and data-intensive computation. Optoelectronic synapses, like biological synapses, are extremely comparable in structure and operating mechanism and can learn directly from the light stimulus, making them a suitable technology for brain-inspired neuromorphic computing. Here, by constructing a core–shell structure of CuAlO2@ZnO oxide heterojunction, we have successfully fabricated the optoelectronic synaptic devices structured as ITO/CuAlO2@ZnO/ITO-glass that can be effectively motivated by light signal at visual light range. Moreover, there is an ultra-high gain of photocurrent generated in the device, resulting in an excitatory postsynaptic current (EPSC) of µA level even at a lower light intensity. In addition, the device could mimic multiple synaptic plasticities at the micro-level such as EPSC, paired-pulse facilitation (PPF), short-term plasticity (STP), spike-number-dependent plasticity (SNDP), and “advanced behaviors” of human-like innate learning and memory functions. The results presented here may serve as a new benchmark for the use of optoelectronic synaptic devices in artificial intelligence.
Artificial Synapses Based on Lead-Free Perovskite Floating-Gate Organic Field-Effect Transistors for Supervised and Unsupervised Learning

Ruizhi Wang,Pengyue Chen,Dandan Hao,Junyao Zhang,Qianqian Shi,Dapeng Liu,Li,Lize Xiong,Junhe Zhou,Jia Huang

DOI: https://doi.org/10.1021/acsami.1c08424

IF: 9.5

2021-01-01

ACS Applied Materials & Interfaces

Abstract:Synaptic devices are expected to overcome von Neumann's bottleneck and served as one of the foundations for future neuromorphic computing. Lead halide perovskites are considered as promising photoactive materials but limited by the toxicity of lead. Herein, lead-free perovskite CsBi3I10 is utilized as a photoactive material to fabricate organic synaptic transistors with a floating-gate structure for the first time. The devices can maintain the Ilight/Idark ratio of 103 for 4 h and have excellent stability within the 30 days test even without encapsulation. Synaptic functions are successfully simulated. Notably, by combining the decent charge transport property of the organic semiconductor and the excellent photoelectronic property of CsBi3I10, synaptic performance can be realized even with an operating voltage as low as -0.01 V, which is rare among floating-gate synaptic transistors. Furthermore, artificial neural networks are constructed. We propose a new method that can simulate the synaptic weight value in multiple digit form to achieve complete gradient descent. The image recognition test exhibits thrilling recognition accuracy for both supervised (91%) and unsupervised (81%) classifications. These results demonstrate the great potential of floating-gate organic synaptic transistors in neuromorphic computing.
High-performance Asymmetric Electrode Structured Light-stimulated Synaptic Transistor for Artificial Neural Networks

Yixin Ran,Wanlong Lu,Xin Wang,Zongze Qin,Guanyu Lu,Xinsu Qin,Zhen Hu,Yuanwei Zhu,Laju Bu,Guanghao Lu

DOI: https://doi.org/10.1039/d3mh00775h

IF: 13.3

2023-07-20

Materials Horizons

Abstract:Photonics neuromorphic computing shows great prospect due to the advantages of low latency, low power consumption and high bandwidth. Transistors with asymmetric electrode structures are receiving increasing attention due to their low power consumption, high optical response, and simple preparation technology. However, intelligent optical synapses constructed by asymmetric electrodes are still lacking systematic research and mechanism analysis. Herein, we present an asymmetric electrode structure of the light-stimulated synaptic transistor (As-LSST) with bulk heterojunction as the semiconductor layer. The As-LSST exhibits superior electrical properties, photosensitivity and multiple biological synaptic functions, including excitatory postsynaptic currents, paired-pulse facilitation, and long-term memory. Benefitting from the asymmetric electrode configuration, the devices can operate under a very low drain voltage of 1 × 10-7 V, and achieve an ultra-low energy consumption of 2.14 × 10-18 J per light stimulus event. Subsequently, As-LSST implemented the optical logic function and associative learning. Utilizing As-LSST, an artificial neural networks(ANN) with ultra-high recognition rate (over 97.5%) of handwritten numbers was constructed. This work presents an easily-accessible concept for future neuromorphic computing and intelligent electronic devices.

materials science, multidisciplinary,chemistry
(Invited) Silicon Nanocrystals for Optoelectronic Synaptic Devices

Xiaodong Pi

DOI: https://doi.org/10.1149/ma2020-01161057mtgabs

2020-01-01

ECS Meeting Abstracts

Abstract:Nowadays neuromorphic computing is regarded as one of the most promising solutions to the Von Neumann bottleneck due to its high intelligence and low energy consumption. The development of neuromorphic computing critically depends on synaptic devices, which simulate biological synapses in neural systems. The incorporation of light into synaptic devices has been recently inspired by the exciting development of optogenetics in neuroscience. Although optically stimulated synaptic devices with electrical output have been realized, the use of light as the output of synaptic devices under electrical stimulation has not been demonstrated. This may impede the full optoelectronic integration of artificial neural systems for neuromorphic computing. In this talk I shall introduce our recent work on using light-emitting silicon nanocrystals (Si NCs) [1] to fabricate electroluminescent synaptic devices [2,3]. These devices exhibit a series of important synaptic functionalities, including paired-pulse facilitation (PPF), transition from short-term plasticity (STP) to long-term plasticity (LTP) and spike-timing-dependent plasticity (STDP). In the meantime, logic functions such as "AND", "OR", "NAND" and "NOR" can also be realized by using these electroluminescent synaptic devices. References Y. Ni, S. Zhou, S. Y. Zhao, W. B. Peng, D. Yang and X. D. Pi, Silicon nanocrystals: unfading silicon materials for optoelectronics, Materials Science & Engineering R 138, 85-117 (2019). Y. Zhao, Y. Wang, W. Huang, H. Jin, P. W. Huang, H. Wang, K. Wang, D. S. Li, M. S. Xu, D. Yang and X. D. Pi, Developing near-infrared quantum-dot light-emitting diodes to mimic synaptic plasticity, Science China Materials 62, 1470–1478 (2019). Y. Zhao, Z. Y. Ni, H. Tan, Y. Wang, H. Jin, T. X. Nie, M. S. Xu, X. D. Pi and D. Yang, Electroluminescent synaptic devices with logic functions, Nano Energy 54, 383-389 (2018).
Covalent Coupling of Porphyrins with Monolayer Graphene for Low-Voltage Synaptic Transistors

Junyao Zhang,Dapeng Liu,Qingqing Ou,Yang Lu,Jia Huang

DOI: https://doi.org/10.1021/acsami.1c22073

IF: 9.5

2022-01-01

ACS Applied Materials & Interfaces

Abstract:Synaptic devices emulating biological synapses are a key building component of artificial neural networks. Porphyrins and graphene, as two kinds of emerging electronic materials, have attracted extensive attention in the research of photoelectric devices due to their excellent structural and functional properties. Herein, we present a photonic synaptic transistor based on porphyrin-graphene covalent hybrids utilizing 5,10,15,20-tetrakis (4-aminophenyl)-21H,23H-porphine and monolayer graphene linked through the diazo addition reaction. The photonic synaptic device successfully simulates several essential biological functions, and the synaptic plasticity can be regulated by adjusting the parameters of light spikes and gate voltages of the device. Moreover, learning and memory behaviors under different wavelengths are studied to imitate the learning efficiency of humans in diverse emotional states. It is worth noting that all the synaptic functions can be realized at a low operating voltage of -10 mV, which is much lower than that required by most reported photonic synaptic devices. These results indicate that covalent coupling products of porphyrins with graphene have broad prospects in the construction of synaptic transistors and may arouse new research advances in neuromorphic devices with ultralow operating voltage and low energy consumption.
Oxygen Vacancy-Induced Synaptic Plasticity in InAlZnO Nanofiber Transistors for Low-Power Neuromorphic Electronics

Wenlan Xiao,Yao Dong,Ranran Ci,Guoxia Liu,Fukai Shan

DOI: https://doi.org/10.1109/ted.2024.3449828

IF: 3.1

2024-09-28

IEEE Transactions on Electron Devices

Abstract:As an alternative for the future computer, the brain-like neuromorphic computing systems have been widely concerned for the characteristics of power efficiency, self-learning, and parallel computing. Meanwhile, the simulation of the synaptic behavior based on electronic devices has attracted widespread attention in past decades. In this report, indium-aluminum–zinc-oxide (InAlZnO) nanofibers were prepared by electrospinning, and the synaptic transistors based on InAlZnO nanofibers were integrated and investigated. With the excitatory response modes, the basic biological functions, including excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF), high-pass filtering properties, short-term memory (STM), and long-term memory (LTM), were simulated by the synaptic transistor. It is found that low-power consumption (~75 fJ/spike) and nonvolatility of the channel conductance for the synaptic transistor based on the InAlZnO nanofibers have been achieved. The pattern recognition training based on the long-term potentiation (LTP)/depression characteristics was developed by CrossSim simulation platform, and a recognition accuracy of 95.6% was achieved by using the Modified National Institute of Standards and Technology database. This work demonstrates a new approach for the establishment of the large-scale, energy-efficient artificial synapses for neuromorphic computing.

engineering, electrical & electronic,physics, applied
Floating-gate Photosensitive Synaptic Transistors with Tunable Functions for Neuromorphic Computing

Li Lingkai,Wang Xiao-Lin,Pei Junxiang,Liu Wen-Jun,Wu Xiaohan,Zhang David Wei,Ding Shi-Jin

DOI: https://doi.org/10.1007/s40843-020-1534-2

2020-01-01

Science China Materials

Abstract:Synaptic devices that merge memory and processing functions into one unit have broad application potentials in neuromorphic computing, soft robots, and human-machine interfaces. However, most previously reported synaptic devices exhibit fixed performance once been fabricated, which limits their application in diverse scenarios. Here, we report floating-gate photosensitive synaptic transistors with charge-trapping perovskite quantum dots (PQDs) and atomic layer deposited (ALD) Al2O3 tunneling layers, which exhibit typical synaptic behaviors including excitatory postsynaptic current (EPSC), pair-pulse facilitation and dynamic filtering characteristics under both electrical or optical signal stimulation. Further, the combination of the high-quality Al2O3 tuning layer and highly photosensitive PQDs charge-trapping layer provides the devices with extensively tunable synaptic performance under optical and electrical co-modulation. Applying light during electrical modulation can significantly improve both the synaptic weight changes and the non-linearity of weight updates, while the memory effect under light modulation can be obviously adjusted by the gate voltage. The pattern learning and forgetting processes for “0” and “1” with different synaptic weights and memory times are further demonstrated in the device array. Overall, this work provides synaptic devices with tunable functions for building complex and robust artificial neural networks.
Ecofriendly Solution-Combustion-Processed Thin-Film Transistors for Synaptic Emulation and Neuromorphic Computing.

Qihan Liu,Chun Zhao,Tianshi Zhao,Yina Liu,Ivona Z. Mitrovic,Wangying Xu,Li Yang,Ce Zhou Zhao

DOI: https://doi.org/10.1021/acsami.0c20947

IF: 9.5

2021-01-01

ACS Applied Materials & Interfaces

Abstract:The ecofriendly combustion synthesis (ECS) and self-combustion synthesis (ESCS) have been successfully utilized to deposit high-k aluminum oxide (AlOx) dielectrics at low temperatures and applied for aqueous In2O3 thin-film transistors (TFTs) accordingly. The ECS and ESCS processes facilitate the formation of high-quality dielectrics at lower temperatures compared to conventional methods based on an ethanol precursor, as confirmed by thermal analysis and chemical composition characterization. The aqueous In2O3 TFTs based on ECS and ESCS-AlOx show enhanced electrical characteristics and counterclockwise transfer-curve hysteresis. The memory-like counterclockwise behavior in the transfer curve modulated by the gate bias voltage is comparable to the signal modulation by the neurotransmitters. ECS and ESCS transistors are employed to perform synaptic emulation; various short-term and long-term memory functions are emulated with low operating voltages and high excitatory postsynaptic current levels. High stability and reproducibility are achieved within 240 pulses of long-term synaptic potentiation and depression. The synaptic emulation functions achieved in this work match the demand for artificial neural networks (ANN), and a multilayer perceptron (MLP) is developed using an ECS-AlOx synaptic transistor for image recognition. A superior recognition rate of over 90% is achieved based on ECS-AlOx synaptic transistors, which facilitates the implementation of the metal-oxide synaptic transistor for future neuromorphic computing via an ecofriendly route.
Doping-modulated lateral asymmetric Schottky diode as a high-performance self-powered synaptic device

Chengdong Yang,Linlin Su,Kaipeng Xia,Xinwei Li,Yilong Liu,Hui Li

DOI: https://doi.org/10.1364/OE.498708

2023-09-11

Abstract:In the post-Moore era, the gradually saturated computational capability of conventional digital computers showing the opposite trend as the exponentially increasing data volumes imperatively required a platform or technology to break this bottleneck. Brain-inspired neuromorphic computing promises to inherently improve the efficiency of information processing and computation by means of the highly parallel hardware architecture to reduce global data transmission. Here, we demonstrate a compact device technology based on the barrier asymmetry to achieve zero-consumption self-powered synaptic devices. In order to tune the device behaviors, the typical chemical doping is used to tailor the asymmetry for energy harvesting. Finally, in our demonstrated devices, the open-circuit voltage (VOC) and power-conversion efficiency (PCE) can be modulated up to 0.77 V and 6%, respectively. Optimized photovoltaic features affords synaptic devices with an outstanding programming weight states, involving training facilitation, stimulus reinforce and consolidation. Based on self-powered system, this work further presents a highly available modulation scheme, which achieves excellent device behaviors while ensuring the zero-energy consumption.
Modulation of Synaptic Plasticity Mimicked in Al Nanoparticle‐Embedded IGZO Synaptic Transistor

Jeehoon Kim,Younghun Kim,Ojun Kwon,Taehyeon Kim,Seyoung Oh,Soeun Jin,Woojin Park,Jung‐Dae Kwon,Seung‐Woo Hong,Chang‐Sik Lee,Ho‐Yong Ryu,Seoksu Hong,Jaehoon Kim,Tae‐Young Heo,Byungjin Cho

DOI: https://doi.org/10.1002/aelm.201901072

IF: 6.2

2020-01-31

Advanced Electronic Materials

Abstract:Diverse artificial synapse structures and materials are widely proposed for neuromorphic hardware systems beyond von Neumann architecture owing to their capability to mimic complex information processing tasks such as image recognition, natural language processing, and learning. Nevertheless, temporal and spatial randomness in the movement of ion and electron particles that exist in materials usually prevents the solid‐state‐based synaptic devices from enabling the reliable modulation of synaptic plasticity. An aluminum nanoparticle (Al NP)‐embedded indium gallium zinc oxide (IGZO) synaptic transistor whose spike peak level and conductance change can be precisely modulated by the density of Al NPs within the IGZO channel is demonstrated. Essential synaptic functions including excitatory or inhibitory postsynaptic current, paired pulse facilitation, and short‐term potentiation or depression are also thoroughly emulated in the synaptic transistor device with the most optimized Al NP density: IGZO:Al NPs (6 nm). Moreover, controllable switching from short‐term to long‐term memory regimes essential for a learning task is demonstrated. Simulation results prove that this transistor can provide a decent recognition accuracy for neuromorphic computing. Indeed, the integrated IGZO:Al NP synaptic circuit with the effective synaptic plasticity will facilitate the implementation of a reconfigurable neuromorphic computing system.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
All-solid-state Ion Doping Synaptic Transistor for Bionic Neural Computing

Q. N. Wang,C. Zhao,W. Liu,H. van Zalinge,Y. N. Liu,L. Yang,C. Z. Zhao

DOI: https://doi.org/10.1109/icicdt51558.2021.9626468

2021-01-01

Abstract:Artificial synapses are the critical component for low-power neuromorphic computing, which surpasses the limitations of von Neumann’s structure. Compared with two-terminal memristors and three-terminal transistors with wire formation and charge trapping mechanisms, the emerging electrolytic gated transistor (EGT) has proven to be a promising neuromorphic application due to its outstanding analog switching performance. Candidate. This paper presents a new low-temperature solution-based oxide thin film transistor, which uses an ion-doped dielectric layer. The device also has a low-noise linear conductance update and a relatively high Gmax/Gmin. The realization of ANN neuromorphic calculation has nearly ideal accuracy. These results highlight the potential of EGT based on AlOx-Li/InOx thin-film transistors in the next generation of low-power electronics outside of the von Neumann architecture.
AlGaN/GaN MOS-HEMT enabled optoelectronic artificial synaptic devices for neuromorphic computing

Jiaxiang Chen,Haitao Du,Haolan Qu,Han Gao,Yitian Gu,Yitai Zhu,Wenbo Ye,Jun Zou,Hongzhi Wang,Xinbo Zou

DOI: https://doi.org/10.1063/5.0194083

2024-04-24

Abstract:Artificial optoelectronic synaptic transistors have attracted extensive research interest as an essential component for neuromorphic computing systems and brain emulation applications. However, performance challenges still remain for synaptic devices, including low energy consumption, high integration density, and flexible modulation. Employing trapping and detrapping relaxation, a novel optically stimulated synaptic transistor enabled by the AlGaN/GaN hetero-structure metal-oxide semiconductor high-electron-mobility transistor has been successfully demonstrated in this study. Synaptic functions, including excitatory postsynaptic current (EPSC), paired-pulse facilitation index, and transition from short-term memory to long-term memory, are well mimicked and explicitly investigated. In a single EPSC event, the AlGaN/GaN synaptic transistor shows the characteristics of low energy consumption and a high signal-to-noise ratio. The EPSC of the synaptic transistor can be synergistically modulated by both optical stimulation and gate/drain bias. Moreover, utilizing a convolution neural network, hand-written digit images were used to verify the data preprocessing capability for neuromorphic computing applications.
Realize low-power artificial photonic synapse based on (Al,Ga)N nanowire/graphene heterojunction for neuromorphic computing

Min Zhou,Yukun Zhao,Xiushuo Gu,Qianyi Zhang,Jianya Zhang,Min Jiang,Shulong Lu

DOI: https://doi.org/10.1063/5.0152156

IF: 5.6

2023-07-01

APL Photonics

Abstract:The fast development of brain-inspired neuromorphic computing systems has stimulated urgent requirements for artificial synapses with low-power consumption. In this work, a photonic synaptic device based on (Al,Ga)N nanowire/graphene heterojunction has been proposed and demonstrated successfully. In the artificial synaptic device, the incident light, the nanowire/graphene heterojunction, and the light-generated carriers play the roles of action potential, pre-synaptic/post-synaptic membrane, and neurotransmitter in a biological synapse, respectively. As a key synaptic function, the paired pulse facilitation index of the photonic synapse can reach 202%, which can be modulated by the interval time between two adjacent light pulses. It is found that the graphene defects, the surface band bending, and the Al vacancies on the surface of (Al,Ga)N nanowires can be the key reasons contributing to the synaptic characteristics of artificial photonic devices. Hence, the dynamic “learning–forgetting” performance of the artificial synaptic device can resemble the “learning–forgetting” behavior of the human brain. Furthermore, the hand-written digits are set up to mimic a typical characteristic of human perceptual learning. After only three training epochs, the simulated network can achieve a high recognition rate of over 90% based on the experimental conductance for long-term potentiation and long-term depression. In supervised learning processes, such few training times are beneficial to reduce energy consumption significantly. Therefore, in the area of neuromorphic computing technology and artificial intelligence systems requiring low-power consumption, this work paves a potential way to develop the optoelectronic synapse based on semiconductor nanowires.

optics,physics, applied
Artificial Neurosynaptic Device Based on Amorphous Oxides for Artificial Neural Network Constructing

Qiujiang Chen,Ruqi Yang,Dunan Hu,Zhizhen Ye,Jianguo Lu

DOI: https://doi.org/10.1039/d4tc01244e

IF: 6.4

2024-01-01

Journal of Materials Chemistry C

Abstract:The von Neumann architecture places restrictions on how much energy conventional computers can use for artificial intelligence training. We created a three-terminal artificial neural synapse that is electronically controlled using amorphous InAlZnO, which was inspired by biological synapses. With electrical pulses of -5 V and 5 V, respectively, the device can produce excitatory postsynaptic current (EPSC) and inhibitory postsynaptic current (IPSC), demonstrating good biological synaptic characteristics. A single pulse can use as little as 456.69 pJ of energy. Meanwhile, the synaptic device will transition from the short-term plasticity (STP)/short-term depression (STD) state to the long-term plasticity (LTP)/long-term depression (LTD) state as the number of pulses grows, more closely mimicking the features of brain learning and memory. Furthermore, conductance stability of the synaptic device is maintained after several LTP-LTD cycles, and we built a three-layer artificial neural network (ANN) on the basis of this attribute. Its handwritten digit recognition accuracy reaches 92.26% after training it with the MINST dataset. The amorphous oxide artificial neural synapse device developed in this work will be crucial in addressing the issue of artificial intelligence training's energy consumption as well as the development of artificial neural networks in the future. An artificial synaptic device based on amorphous oxides is created inspired by biological synapse, and a three-layer artificial neural network is constructed using the data of a LTP-LTD circle.
Low-power and high PPF feature synaptic transistors with 3D interface based on SnO2 nanofibers for neuromorphic application

Shengkai Wen,Jun Li,Zexin Wang,Zhenzhao Zhang,Jianhua Zhang

DOI: https://doi.org/10.1063/5.0159012

IF: 4

2023-07-24

Applied Physics Letters

Abstract:Featuring excellent computational rates and highly parallel computing, human brain-based neuromorphic devices have attracted the attention of more and more researchers. There have been numerous reports investigating the use of transistors to simulate synaptic functions; however, the majority of the dielectric and channel layers in these devices are layer-stacked structures, which are not conducive to the modulation of the active layers. Moreover, optimizing the paired pulse facilitation index is a critical factor in enhancing the short-term memory of synaptic devices and constructing high-precision synaptic systems, but it has received inadequate attention. In this study, we present a low-cost electrolyte-gated synaptic transistor with three-dimensional (3D) interfacial contacts, in which the channel layer is SnO2 nanofibers, and the 3D interface reduces the power consumption to 9.6 fJ. This study has simulated some important synaptic behaviors; importantly, the PPF value is as high as 223%, which is related to the slow kinetics of sodium ions. In addition, the Ebbinghaus forgetting curve and its application to image memory are also simulated. These findings provide valuable insight for the future development of complex neuromorphic systems.

physics, applied
Optoelectronic Artificial Synaptic Device Based on Amorphous InAlZnO Films for Learning Simulations

Ruqi Yang,Lei Yin,Jianguo Lu,Bojing Lu,Xiaodong Pi,Siqin Li,Fei Zhuge,Yangdan Lu,Wenyi Shao,Zhizhen Ye

DOI: https://doi.org/10.1021/acsami.2c14029

IF: 9.5

2022-01-01

ACS Applied Materials & Interfaces

Abstract:Neuromorphic computing, which mimics brain function, can address the shortcomings of the "von Neumann" system and is one of the critical components of next-generation computing. The use of light to stimulate artificial synapses has the advantages of low power consumption, low latency, and high stability. We demonstrate amorphous InAlZnO-based light-stimulated artificial synaptic devices with a thin-film transistor structure. The devices exhibit fundamental synaptic properties, including excitatory postsynaptic current, paired-pulse facilitation (PPF), and short-term plasticity to long-term plasticity conversion under light stimulation. The PPF index stimulated by 375 nm light is 155.9% when the time interval is 0.1 s. The energy consumption of each synaptic event is 2.3 pJ, much lower than that of ordinary MOS devices and other optical-controlled synaptic devices. The relaxation time constant reaches 277 s after only 10 light spikes, which shows the great synaptic plasticity of the device. In addition, we simulated the learning-forgetting-relearning-forgetting behavior and learning efficiency of human beings under different moods by changing the gate voltage. This work is expected to promote the development of high-performance optoelectronic synaptic devices for neuromorphic computing.
IGZO/Al2O3 Based Depressed Synaptic Transistor

Yu Liu,Xiawa Wang,Wenjie Chen,Linyuan Zhao,Wei Zhang,Weijun Cheng,Ziting Zhuo,Jing Wang,Tian-Ling Ren,Jun Xu

DOI: https://doi.org/10.1016/j.spmi.2019.01.026

IF: 3.22

2019-01-01

Superlattices and Microstructures

Abstract:Bionic devices, such as potentiated synaptic devices, have obtained a lot of attention over the past IGZO years. However, depressed synaptic devices, which are equally significant in brain-inspired Al2O3 computation devices, have attracted less attention due to the lack of a proper electrolyte. In this Depressed synaptic work, an indium-gallium-zinc-oxide (IGZO) and aluminum oxide (Al2O3) film based synaptic Neuromorphic computation transistor was fabricated for depressed neuromorphic applications. An Al2O3 film desposited by the atomic layer deposition (ALD) at 100 degrees C was used as the insulator. The low temperature introduced a lot of electron trappings at the IGZO-Al2O3 interface, which contributed to the depression feature of the synaptic transistor. The energy consumption of the fabricated transistor was estimated to be as low as similar to 3.8 pJ/spike. The recovery time of a pulse was as short as similar to 150 ms. Paired-pulse depression (PPD) and low-frequency filter behaviors were also mimicked in the transistor.
Lithium titanate synaptic device imitating lithium-ion battery structure

Ye Liao,Gongying Chen,Jiulong Yu,Wei Huang,Guangyang Lin,Jianyuan Wang,Jianfang Xu,Cheng Li,Songyan Chen

DOI: https://doi.org/10.1088/1361-6463/ad5aaa

2024-06-22

Journal of Physics D Applied Physics

Abstract:With the growing prevalence of neuromorphic computing algorithms, there is a growing need for electronic synaptic devices. In this study, using Li4+xTi5O12 (LTO) as the resistive switching layer, C as the lithium ions storage layer, and Li1+xAlxTi2-x(PO4)3 (LATP) as ions transmission layer, a synaptic device is designed with the structure of Pt/C/LATP/LTO/PtSi to imitate the lithium-ion battery. Variation of the thickness of the LATP layer in the LTO device is explored to show the impact on the device's synaptic performance. With a LATP thickness of 100 nm, the LTO synaptic device exhibits a high potentiation/depression cyclic stability of over 50 cycles, improved potentiation/depression linearity and smoothness. The synaptic potentiation/depression is ascribed to migration of lithium ions from the LTO layer. A conductance relaxation characteristic of the device is explained by battery self-discharge phenomenon. The battery effect in the LTO device also led to generation of electromotive force (EMF). The study of battery-imitating LTO synaptic device offers new perspectives on the connection between battery and analog synaptic device.

physics, applied

Enhancing LiAlO<sub>X</sub> synaptic performance by reducing the Schottky barrier height for deep neural network applications

Enhancing Lialox Synaptic Performance By Reducing The Schottky Barrier Height For Deep Neural Network Applications

Photonic Synapses with Ultra‐Low Energy Consumption Based on Vertical Organic Field‐Effect Transistors

Nanostructured CuAlO2@ZnO Optoelectronic Device for Artificial Synaptic Applications

Artificial Synapses Based on Lead-Free Perovskite Floating-Gate Organic Field-Effect Transistors for Supervised and Unsupervised Learning

High-performance Asymmetric Electrode Structured Light-stimulated Synaptic Transistor for Artificial Neural Networks

(Invited) Silicon Nanocrystals for Optoelectronic Synaptic Devices

Covalent Coupling of Porphyrins with Monolayer Graphene for Low-Voltage Synaptic Transistors

Oxygen Vacancy-Induced Synaptic Plasticity in InAlZnO Nanofiber Transistors for Low-Power Neuromorphic Electronics

Floating-gate Photosensitive Synaptic Transistors with Tunable Functions for Neuromorphic Computing

Ecofriendly Solution-Combustion-Processed Thin-Film Transistors for Synaptic Emulation and Neuromorphic Computing.

Doping-modulated lateral asymmetric Schottky diode as a high-performance self-powered synaptic device

Modulation of Synaptic Plasticity Mimicked in Al Nanoparticle‐Embedded IGZO Synaptic Transistor

All-solid-state Ion Doping Synaptic Transistor for Bionic Neural Computing

AlGaN/GaN MOS-HEMT enabled optoelectronic artificial synaptic devices for neuromorphic computing

Realize low-power artificial photonic synapse based on (Al,Ga)N nanowire/graphene heterojunction for neuromorphic computing

Artificial Neurosynaptic Device Based on Amorphous Oxides for Artificial Neural Network Constructing

Low-power and high PPF feature synaptic transistors with 3D interface based on SnO2 nanofibers for neuromorphic application

Optoelectronic Artificial Synaptic Device Based on Amorphous InAlZnO Films for Learning Simulations

IGZO/Al2O3 Based Depressed Synaptic Transistor

Lithium titanate synaptic device imitating lithium-ion battery structure