Non-Fermi Liquid Behavior Induced by Inter-Orbital Scattering in Hole-Doped LiFe$_{1-x}$V$_x$As

Lingyi Xing,Xingqiang Shi,P. Richard,X. C. Wang,Q. Q. Liu,Bing Lv,J. Z.,Futing Bao,Lingmei Kong,H. Miao,Tian Qian,T. K. Kim,Moritz Hoesch,Hong Ding,Jin Chen
2016-01-01
Abstract:We synthesized a series of V-doped LiFe$_{1-x}$V$_x$As single crystals. The superconducting transition temperature $T_c$ of LiFeAs decreases rapidly at a rate of 7 K per 1\% V. The Hall coefficient of LiFeAs switches from negative to positive with 4.2\% V doping, showing that V-doping introduces hole carriers. This observation is further confirmed by the evaluation of the Fermi surface volume measured by angle-resolved photoemission spectroscopy (ARPES), from which a 0.3 hole doping per V atom introduced is deduced. Interestingly, the introduction of holes does not follow a rigid band shift. We also show that the temperature evolution of the electrical resistivity as a function of doping indicates a crossover from a Fermi liquid to a non-Fermi liquid, and back again towards a Fermi liquid. Our ARPES data indicate that the non-Fermi liquid behavior is mostly enhanced when one of the hole $d_{xz}/d_{yz}$ Fermi surfaces is well nested by the antiferromagnetic wave vector to the inner electron Fermi surface pocket with the $d_{xy}$ orbital character. The magnetic susceptibility of LiFe$_{1-x}$V$_x$As indicates that V acts as a strong magnetic impurity, thus providing a natural explanation to the rapid suppression of superconductivity upon V doping.
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