Observation of Non-Fermi Liquid Behavior in Hole-Doped LiFe_1-xV_xAs

L. Y. Xing,X. Shi,P. Richard,X. C. Wang,Q. Q. Liu,B. Q. Lv,J. -Z. Ma,B. B. Fu,L. -Y. Kong,H. Miao,T. Qian,T. K. Kim,M. Hoesch,H. Ding,C. Q. Jin

DOI: https://doi.org/10.1103/physrevb.94.094524

2016-01-01

Abstract:We synthesized a series of V-doped LiFe_1-xV_xAs single crystals. The superconducting transition temperature T_c of LiFeAs decreases rapidly at a rate of 7 K per 1% V. The Hall coefficient of LiFeAs switches from negative to positive with 4.2% V doping, showing that V doping introduces hole carriers. This observation is further confirmed by the evaluation of the Fermi surface volume measured by angle-resolved photoemission spectroscopy (ARPES), from which a 0.3 hole doping per V atom introduced is deduced. Interestingly, the introduction of holes does not follow a rigid band shift. We also show that the temperature evolution of the electrical resistivity as a function of doping is consistent with a crossover from a Fermi liquid to a non-Fermi liquid. Our ARPES data indicate that the non-Fermi liquid behavior is mostly enhanced when one of the hole d_xz/d_yz Fermi surfaces is well nested by the antiferromagnetic wave vector to the inner electron Fermi surface pocket with the d_xy orbital character. The magnetic susceptibility of LiFe_1-xV_xAs suggests the presence of strong magnetic impurities following V doping, thus providing a natural explanation to the rapid suppression of superconductivity upon V doping.