The Design of a 310&Amp;#x2013;350-Ghz Sub-Harmonic Mixer with Planar Schottky Diodes

Bo Zhang,Yong Fan,Xiaofan Yang,Fuqun Zhong,Zhe Chen,S X Zhang,Xian Qi Lin,Ke Song
DOI: https://doi.org/10.1109/issse.2010.5606977
2010-01-01
Abstract:This paper presents the design and simulation of a novel fixed-tuned 310-350-GHz wide-band sub-harmonic mixer. The mixer is based on an anti-parallel pair of GaAs Schottky diodes fabricated at European company. The circuits are fully integrated with the RF/IF filter and flip-chipped onto a suspended quartz-based substrate. A best double-sideband-mixer loss of 5.7 dB was achieved with 5 mW of LO power at 332 GHz. Over an RF band of 310-350 GHz, the double-sideband loss is below 11 dB. This state-of-the-art optimization is attributed to lower parasitic devices and a low-loss waveguide circuit.
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