A Schottky Diodes Based W-band 4Th-Harmonic Mixer

Yang Liu,Bo Zhang,Lisen Zhang,Yong Fan

2017-01-01

Abstract:In this paper, a broadband fourth-harmonic mixer based on gallium arsenide (GaAs) Schottky barrier diodes working at 80–100GHz is designed. This fourth-harmonic mixer is simulated and attains low conversion loss below 14dB in the whole band. The design process and simulation results are explained in detail.

What problem does this paper attempt to address?

The Study of 0.34 Thz Monolithically Integrated Fourth Subharmonic Mixer Using Planar Schottky Barrier Diode

Xiaodong Tong,Qian Li,Ning An,Wenjie Wang,Xiaodong Deng,Liang Zhang,Haitao Liu,Jianping Zeng,Zhiqiang Li,Hailing Tang,Yong-Zhong Xiong

DOI: https://doi.org/10.1007/s10762-015-0208-y

2015-01-01

Journal of Infrared Millimeter and Terahertz Waves

Abstract:A planar Schottky barrier diode with the designed Schottky contact area of approximately 3 μm2 is developed on gallium arsenide (GaAs) material. The measurements of the developed planar Schottky barrier diode indicate that the zero-biased junction capacitance Cj0 is 11.0 fF, the parasitic series resistance RS is 3.0 Ω, and the cut off frequency fT is 4.8 THz. A monolithically integrated fourth subharmonic mixer with this diode operating at the radio frequency (RF) signal frequency of 0.34 THz with the chip area of 0.6 mm2 is implemented. The intermediate frequency (IF) bandwidth is from DC to 40 GHz. The local oscillator (LO) bandwidth is 37 GHz from 60 to 97 GHz. The RF bandwidth is determined by the bandwidth of the on chip antenna, which is 28 GHz from 322 to 350 GHz. The measurements of the mixer demonstrated a conversion loss of approximately 51 dB.
Fabrication and Characterization of 8.87 THz Schottky Barrier Mixer Diodes for Mixer

Wenjie Wang,Qian Li,Ning An,Xiaodong Tong,Jianping Zeng

DOI: https://doi.org/10.1063/1.5033841

2018-01-01

AIP Conference Proceedings

Abstract:In this paper we report on the fabrication and characterization of GaAs-based THz schottky barrier mixer diodes. Considering the analyzed results as well as fabrication cost and complexity, a group of trade-off parameters was determined. Electron-beam lithography and air-bridge technique have been used to obtain schottky diodes with a cut off frequency of 8.87 THz. Equivalent values of series resistance, ideal factor and junction capacitance of 10.2 (1) Omega, 1.14 (0.03) and 1.76(0.03) respectively have been measured for 0.7um diameter anode devices by DC and RE measurements. The schottky barrier diodes fabrication process is fully planar and very suitable for integration in THz frequency multiplier and mixer circuits. THz Schottky harrier diodes based on such technology with 2 jam diameter anodes have been tested at 1.6 THz in a sub-harmonic mixer.
A High-Performance 330-GHz Subharmonic Mixer Using Schottky Diodes

Yang Liu,Zhongqian Niu,Bo Zhang,Yi Hu,Bingli Dai,Chuanqi Qiao,Yinian Feng,Yong Fan,Xiaodong Chen

DOI: https://doi.org/10.1109/lmwc.2022.3149378

IF: 3

2022-01-01

IEEE Microwave and Wireless Components Letters

Abstract:This letter presents the design of a state-of-the-art 330-GHz subharmonic mixer (SHM) using planar Schottky diodes. Unlike conventional mixers, the embedded impedances of the diode chip are accurately extracted and then used for direct synthesis of the diode’s peripheral circuit to efficiently design SHMs with good performance. Band-stop filters (BSFs) using symmetrical open stubs are adopted to recycle RF and local oscillator (LO) energy while simplifying the circuit. At room temperature, the mixer exhibits a single sideband (SSB) conversion loss (CL) of less than 10 dB from 292 to 356 GHz, with 3 mW of LO power at 164.5 GHz. A minimum SSB CL of 7.5 dB is achieved at 334 GHz. The measured return losses at RF and IF ports are typically better than 14 dB.

engineering, electrical & electronic
Design of A 664ghz Wideband Sub-Harmonic Mixer Based on Master Technology

DongFeng Ji,Bo Zhang,Yong Fan,Yu Jian Cheng,Jin Li,Ming Hua Zhao,Li Sen Zhang,Dong Xing,Jun Long Wang,Yong Hong Zhang,Xiao Bo Yang

DOI: https://doi.org/10.1109/ucmmt.2015.7460613

2015-01-01

Abstract:In this paper, a terahertz wideband sub-harmonic mixer based on the Schottky anti-parallel diodes pair and MASTER technology is presented. The mixer circuit is fabricated on a 0.05mm quartz substrate including Schottky anti-parallel diodes pair, RF/LO transition, IF matching networks and filtering circuits. The diode circuit is fabricated on a quartz substrate directly by MASTER technology. The research analyzed the topology of sub-harmonic mixer, device modeling of Schottky diodes, the 3D electromagnetic passive circuits and the mixer circuitry with optimum performance. Conversion loss of the mixer is less than 10dB range from 513GHz to 705GHz when the LO pumped power was 5dBm at 260GHz to 400GHz.
The Design of a 310&Amp;#x2013;350-Ghz Sub-Harmonic Mixer with Planar Schottky Diodes

Bo Zhang,Yong Fan,Xiaofan Yang,Fuqun Zhong,Zhe Chen,S X Zhang,Xian Qi Lin,Ke Song

DOI: https://doi.org/10.1109/issse.2010.5606977

2010-01-01

Abstract:This paper presents the design and simulation of a novel fixed-tuned 310-350-GHz wide-band sub-harmonic mixer. The mixer is based on an anti-parallel pair of GaAs Schottky diodes fabricated at European company. The circuits are fully integrated with the RF/IF filter and flip-chipped onto a suspended quartz-based substrate. A best double-sideband-mixer loss of 5.7 dB was achieved with 5 mW of LO power at 332 GHz. Over an RF band of 310-350 GHz, the double-sideband loss is below 11 dB. This state-of-the-art optimization is attributed to lower parasitic devices and a low-loss waveguide circuit.
A 27 - 57 GHz Down-conversion Mixer with Bulk Injection Technique

Qianyi Dong,Liang Qiu,Shengjie Wang,Huiyan Gao,Kailong Zhao,Zhonglan Qian,Jiangbo Chen,Yen-Cheng Kuan,Qun Jane Gu,Chunyi Song,Zhiwei Xu

DOI: https://doi.org/10.1109/ims37962.2022.9865567

2022-01-01

Abstract:A millimeter-wave (mm-Wave) down-conversion mixer biased at Class-B condition with bulk injection (BI) to reduce the local oscillation (LO) power requirement is proposed to enhance the conversion gain (CG) and linearity. The measurement shows this mixer achieves a peak CG of 18 dB, a measured 3-dB radio frequency (RF) simultaneous bandwidth of 27 - 57 GHz (71.4%) and dc power consumption of 6 mW at LO drive power of −7 dBm. The mixer demonstrates a 4-dBm input third-order intercept point (IIP3), a −8-dBm input 1-dB compression point (IP1dB) and a 12.8-dB noise figure (NF) at 39 GHz.
1.1 THz Tenth Harmonic Mixer Based on Planar GaAs Schottky Diode

Bo Zhang,Xiaolin Lv,Jie He,Dong Xing,Yong Fan,Xiaodong Chen

DOI: https://doi.org/10.1049/iet-map.2018.6194

2019-01-01

IET Microwaves Antennas & Propagation

Abstract:Here, the tenth harmonic mixing technology based on planar GaAs Schottky diode is first proposed for the 1.1 terahertz (THz) frequency conversion module. The first higher order mode cut-off frequency of the suspended microstrip line has been investigated to determine the appropriate cross-sectional dimension of transmission line shield cavity in the radio frequency (RF) circuit portion. The height of shield cavity of transmission line is designed to be discontinuous in order to facilitate the assembly of the diode. A modelling approach combining field and circuit is used to achieve joint simulation of linear passive structure and diode non-linear characteristics. The simulation results show that the frequency conversion loss of this mixer is <55 dB in the RF frequency range of 1.03-1.154 THz, and the best frequency conversion loss is 50 dB at RF of 1.098 THz.
Development of a Wideband 220-Ghz Subharmonic Mixer Based on GaAs Monolithic Integration Technology

Yilin Yang,Bo Zhang,Dongfeng Ji,Xiangyang Zhao,Yong Fan,Xiaodong Chen

DOI: https://doi.org/10.1109/access.2020.2973399

IF: 3.9

2020-01-01

IEEE Access

Abstract:A wideband 220 GHz subharmonic mixer based on monolithic integration technology is proposed in this paper. It features $12~\mu \text{m}$ -thick GaAs membrane with anti-parallel Schottky diodes working at THz band monolithically integrated on the membrane. The optimization principles of low-parastics Schottky diodes and the fabrication process of GaAs MMIC membrane diodes are elaborated. To realize optimum performances of the mixer, the dimensions of the integrated diodes and the matching network are optimized with harmonic balance simulation and load-pull techniques. An IF low pass filter with compact microstrip resonance cell (CMRC) configuration and an improved perpendicular coax-to-microstrip connection are used to realize wide IF band. The measured results show that the single sideband (SSB) conversion loss of this mixer is less than 10.5 dB from 185 to 255 GHz with fixed IF of 1 GHz, while the double sideband (DSB) noise temperature is better than 1400 K in this frequency range. Using fixed local oscillator (LO) frequency of 110 GHz, the measured SSB conversion loss is 7.4–10.7 dB within 185–255 GHz, indicating the good performances of the mixer with IF from DC to 35 GHz. The GaAs monolithic integration technology provides an approach for massive manufacturing of identical circuits and the proposed mixer with wideband characteristics will be applied in 220 GHz imaging systems in the near future.
1X4 Gaas Optical Switch Array with Asymmetric X-Junction

JY Yang,H Feng,WQ Zhou,Q Zhou,MH Wang

DOI: https://doi.org/10.1117/12.253185

1996-01-01

Abstract:In this paper, the asymmetric X-junction is applied in the GaAs Mach-Zehnder optical switch instead of the traditional Y-branch and a 1 X 4 switch array is designed and fabricated. The basic mechanism of the asymmetric X-junction is briefly narrated. The considerations for the device's designing and the fabrication process are also presented. The switch unit in this device operating at 1.15 micrometers has a switching voltage of 12 V and a crosstalk of less than -20 dB. The propagation loss in the waveguide of this device is about 7 dB/cm.
A Novel 180–210 GHz Single Sideband Mixer Using Filtering Waveguide-Microstrip Transition Structure

Yang Liu,Bo Zhang,Zhongqian Niu,Yinian Feng,Yong Fan

DOI: https://doi.org/10.1109/lmwt.2023.3248061

2023-01-01

Abstract:In this letter, we proposed a novel 180–210 GHz single sideband (SSB) Schottky diode-based subharmonic mixer (SHM), which features in simpler structure and fabrication compared with existing methods. Image rejection of the 220–250 GHz upper sideband (USB), as well as impedance matching, was achieved by a filtering waveguide-microstrip transition structure at the radio frequency (RF) input, rather than using traditional waveguide filters. Eventually, the mixer was measured to show great performance, including a SSB conversion loss (CL) of 8–12 dB across the passband, and an image rejection ratio (IRR) of 15–35 dB.
Development of an Improved Sub-harmonic Mixer Based on Planar Schottky Diodes at 94 Ghz

Fuqun Zhong,Bo Zhang,Fan Yang,Minghui Zhao,Kang Xu

2012-01-01

Abstract:Accompany with the rapid development of millimeter-wave science and technology, sub- harmonically pumped mixers has received more and more attention. In this study, a balanced sub-harmonic fix- tuned mixer is designed based on combination of linear/nonlinear circuit simulation. It is realized based on rogers substrate process to minimize the cost and simplify the assembly. The mixer works in the 91-98 GHz band with SSB conversion loss 8~11 dB when pumped with 6 mW of local oscillator power and minimum SSB conversion loss of 8 dB is measured at 93 GHz. The measured performance of this mixer is sufficient and robust for the foreseen applications.
Design and Analysis of an Ultrawide-Band Distributed Drain-Pumped Mixer Using 0.18µm CMOS Technology

Boyu Nie,Jinfang Zhou,Kangsheng Chen

DOI: https://doi.org/10.1109/primeasia.2009.5397456

2009-01-01

Abstract:This paper proposes the design and analysis of a broadband 2–40 GHz passive distributed drain-pumped mixer using 0.18µm CMOS technology for ultrawide-band (UWB) receivers. To achieve broad bandwidth for the UWB communications, a distributed topology is introduced. A closed-form analytical model for the conversion loss of distributed drain-pumped mixer is presented for the first time. The designed three-stage drain-pumped mixer consumes zero dc power and exhibits a low and flat conversion loss of 5±1dB from 2 to 40 GHz. The single side-band (SSB) noise figure (NF) is below 12.6 dB for the entire range of frequencies and the minimal SSB NF of 10.7 dB achieves at 33 GHz. An input third-order intercept point of 17 dBm achieves at 10 GHz. This mixer is well suitable for low power-consuming, wideband monolithic microwave integrated circuit (MMIC) implementation.
A 290–310 GHz Single Sideband Mixer with Integrated Waveguide Filters

Cheng Guo,Xiaobang Shang,Michael J. Lancaster,Jun Xu,Jeffrey Powell,Hui Wang,Kai Parow-Souchon,Manju Henry,Colin Viegas,Byron Alderman,Peter G. Huggard

DOI: https://doi.org/10.1109/tthz.2018.2841771

IF: 3.2

2018-01-01

IEEE Transactions on Terahertz Science and Technology

Abstract:A 290-310 GHz Schottky diode based subharmonic mixer with integrated, low loss, impedance matching waveguide cavity filters is presented in this paper. This mixer was designed for use in a 300 GHz communication system with a 20 GHz intermediate frequency band centred at 15 GHz. Image rejection of the 260-280 GHz lower sideband, as well as impedance matching, was achieved using an integrated third-order filter in the RF waveguide. The conventional coupling matrix was used to design the filter even though the impedance presented to the RF port was complex and frequency dependent. The mixer was measured to have: 1) single sideband conversion loss of 9-10 dB across the upper sideband, with a mixer noise temperature of 2000-2600 K; 2) a return loss at the RF port better than 12 dB, with three filter reflection zeroes (poles) distinguishable; and 3) a sideband rejection ratio from 13 to 25 dB, demonstrating the RF filter's excellent performance in terms of impedance matching and filtering.
Development of 340-GHz Transceiver Front End Based on GaAs Monolithic Integration Technology for THz Active Imaging Array

Yang Liu,Bo Zhang,Yinian Feng,Xiaolin Lv,Dongfeng Ji,Zhongqian Niu,Yilin Yang,Xiangyang Zhao,Yong Fan

DOI: https://doi.org/10.3390/app10217924

2020-11-09

Applied Sciences

Abstract:Frequency multipliers and mixers based on Schottky barrier diodes (SBDs) are widely used in terahertz (THz) imaging applications. However, they still face obstacles, such as poor performance consistency caused by discrete flip-chip diodes, as well as low efficiency and large receiving noise temperature. It is very hard to meet the requirement of multiple channels in THz imaging array. In order to solve this problem, 12-μm-thick gallium arsenide (GaAs) monolithic integrated technology was adopted. In the process, the diode chip shared the same GaAs substrate with the transmission line, and the diode’s pads were seamlessly connected to the transmission line without using silver glue. A three-dimensional (3D) electromagnetic (EM) model of the diode chip was established in Ansys High Frequency Structure Simulator (HFSS) to accurately characterize the parasitic parameters. Based on the model, by quantitatively analyzing the influence of the surface channel width and the diode anode junction area on the best efficiency, the final parameters and dimensions of the diode were further optimized and determined. Finally, three 0.34 THz triplers and subharmonic mixers (SHMs) were manufactured, assembled, and measured for demonstration, all of which comprised a waveguide housing, a GaAs circuit integrated with diodes, and other external connectors. Experimental results show that all the triplers and SHMs had great performance consistency. Typically, when the input power was 100 mW, the output power of the THz tripler was greater than 1 mW in the frequency range of 324 GHz to 352 GHz, and a peak efficiency of 6.8% was achieved at 338 GHz. The THz SHM exhibited quite a low double sideband (DSB) noise temperature of 900~1500 K and a DSB conversion loss of 6.9~9 dB over the frequency range of 325~352 GHz. It is indicated that the GaAs monolithic integrated process, diodes modeling, and circuits simulation method in this paper provide an effective way to design THz frequency multiplier and mixer circuits.
Optimization and design of a suspended 215–235-GHz subharmonically pumped mixer for space-borne radiometers

Bo Zhang,Yong Fan,Xiaofan Yang,Fuqun Zhong,Zhe Chen,Xianqi Lin,Minghua Zhao

DOI: https://doi.org/10.1109/ICMMT.2010.5524955

2010-01-01

Abstract:This paper presents the optimization and design of a low-loss fixed-tuned 215-235-GHz sub-harmonic mixer, pumped by planar GaAs Schottky diodes fabricated by European company for space-borne radiometers. The circuits are fully integrated with the RF/IF filter and flip-chipped onto a suspended quartz-based substrate. The GaAs Gunn oscillator is used as the local-oscillator (LO) and this paper also found an innovative nonlinear circuit model for GaAs Gunn diode in oscillator based on the physical mechanism. Its equivalent nonlinear circuit can assist the design of the Gunn LO. A best double-sideband-mixer loss of 6.4dB was achieved with 7mW of LO power at 224GHz. Over an RF band of 215-235GHz, the doublesideband loss is below 12dB. This state-of-the-art optimization is attributed to lower parasitic devices and a low-loss waveguide circuit.
Design of Ka-band half mode substrate integrated waveguide (HMSIW) mixer

Yitao Wang,Xiaowei Zhu,Changjiang You,GuangQi Yang

DOI: https://doi.org/10.1109/ICUWB.2009.5288705

2009-01-01

Abstract:In this paper, a half mode substrate integrated waveguide (HMSIW) mixer at Ka-band is proposed. A newly developed 3-dB cruciform HMSIW coupler was employed to add LO and RF signal on Schottky diodes. Size of the mixer is more compact than traditional narrow-wall aperture coupling SIW or HMSIW configuration mixer. The mixer was designed and fabricated on Roggers 5880 substrate with beam lead Schottky diodes. In experimental test, conversion loss was measured in frequency range from 34 to 38 GHz under different LO power. The conversion loss of 8.2 dB was reached at 36 GHz.
A Ka-Band High IF Frequency 4th Harmonic Mixer

LIANG Liang,XU Jun,XUE Liang-Jin

DOI: https://doi.org/10.3969/j.issn.1001-0548.2005.04.009

2005-01-01

Abstract:This paper gives the particular description of a theoretical analysis and practical design for high IF frequency millimeter-wave subharmonic mixer with three one-dimensional photonic bandgap (PEG) cells. Base on computer aided design, a Ka-band 4th harmonic mixer has been designed and tested. When IF frequency is 3 GHz, and RF frequency varied from 34-35.8 GHz, the conversion loss is less than 14.5 dB and the least is 11 dB. The results of simulation and test show that the formulas are correct and the scheme is practicable.
PLANAR W-BAND MIXER WITH A NOVEL IF-BLOCK

Ming Zhou Zhan,Quansheng Xu,Wei Zhao,Yong Zhang,Rui-Min Xu,Weigan Lin

DOI: https://doi.org/10.2528/pierc11022405

2011-01-01

Progress In Electromagnetics Research C

Abstract:A planar W-band single balanced mixer is designed and measured in this paper. This mixer is realized by using two novel IF- block, a rat-race ring with the flfth port, two beamlead GaAs Schottky diodes and two RF chokes. The novel IF-block which designed the flrst time in W-band is employed to provide re∞ection points for IF signal and to provide low loss path in wide bandwidth for the RF and LO signals. To our knowledge, the mixer shows the best conversion loss at 95GHz and the highest 1dB power compression (Pi1dB) point among the W-band planar hybrid microwave integrated circuit (HMIC) mixers.
Analysis and Design of a Broadband SiGe HBT Image-Reject Mixer Integrating Quadrature Signal Generator

Yatao Peng,Lijun Zhang,Jun Fu,Yudong Wang

DOI: https://doi.org/10.1109/tmtt.2015.2503754

IF: 4.3

2015-01-01

IEEE Transactions on Microwave Theory and Techniques

Abstract:In this paper, a broadband upconversion image-reject mixer integrating a quadrature signal generator is presented. The polyphase networks (PPNs) are used to convert the single-ended local-oscillator input signal to quadrature signals. A pair of inductors is added to traditional PPN to enhance the return loss performance, while optimizing the image-reject ratio. A common-emitter tranconductance using the feedforward technique is applied to a quadrature active Gilbert mixer to obtain relative high linearity, and the optical solution for high-frequency applications is given and analyzed. An active differential to single totem-pole balun is applied as the output stage, which is well matched to load impedance and can provide medium output power. Measured results show excellent performance in the designed frequency from 400 MHz to 6 GHz.
Systematic Design of 7‐to‐40‐ghz On‐chip Mixer Based on Optimal Impedance Deviation Coefficient

Yao Li,Xiao-Wei Zhu,Rui-Jia Liu,Ling Tian

DOI: https://doi.org/10.1002/mmce.22144

IF: 1.987

2020-01-01

International Journal of RF and Microwave Computer-Aided Engineering

Abstract:In this article, a 7-GHz to 40-GHz ultra-wideband passive double-balanced mixer MMIC using compact wideband Marchand balun (CWMB) is presented. The CWMB is analyzed and designed by introducing a novel optimal impedance deviation coefficient. A trade-off between the needed bandwidth and the acceptable insertion loss in an ultra-wideband passive-doubly-balanced mixer design can be made through introducing the optimal impedance deviation coefficient. Finally, to verify the proposed methodology, a compact wideband passive double-balanced mixer monolithic microwave integrated circuit (MMIC) was designed and fabricated using a standard gallium arsenide (GaAs) pHEMT technology according to the process characteristics. Experimental results show that an ultra-wideband mixer MMIC is realized from 7 GHz to 40 GHz (140% fractional bandwidth) with a measured conversion loss between 9.5 dB similar to 12.5 dB (in-band fluctuation less than 3 dB) and a LO-to-RF isolation larger than 34 dB. The measurement results are in good agreement with the simulation results.

A Schottky Diodes Based W-band 4Th-Harmonic Mixer

The Study of 0.34 Thz Monolithically Integrated Fourth Subharmonic Mixer Using Planar Schottky Barrier Diode

Fabrication and Characterization of 8.87 THz Schottky Barrier Mixer Diodes for Mixer

A High-Performance 330-GHz Subharmonic Mixer Using Schottky Diodes

Design of A 664ghz Wideband Sub-Harmonic Mixer Based on Master Technology

The Design of a 310&Amp;#x2013;350-Ghz Sub-Harmonic Mixer with Planar Schottky Diodes

A 27 - 57 GHz Down-conversion Mixer with Bulk Injection Technique

1.1 THz Tenth Harmonic Mixer Based on Planar GaAs Schottky Diode

Development of a Wideband 220-Ghz Subharmonic Mixer Based on GaAs Monolithic Integration Technology

1X4 Gaas Optical Switch Array with Asymmetric X-Junction

A Novel 180–210 GHz Single Sideband Mixer Using Filtering Waveguide-Microstrip Transition Structure

Development of an Improved Sub-harmonic Mixer Based on Planar Schottky Diodes at 94 Ghz

Design and Analysis of an Ultrawide-Band Distributed Drain-Pumped Mixer Using 0.18µm CMOS Technology

A 290–310 GHz Single Sideband Mixer with Integrated Waveguide Filters

Development of 340-GHz Transceiver Front End Based on GaAs Monolithic Integration Technology for THz Active Imaging Array

Optimization and design of a suspended 215–235-GHz subharmonically pumped mixer for space-borne radiometers

Design of Ka-band half mode substrate integrated waveguide (HMSIW) mixer

A Ka-Band High IF Frequency 4th Harmonic Mixer

PLANAR W-BAND MIXER WITH A NOVEL IF-BLOCK

Analysis and Design of a Broadband SiGe HBT Image-Reject Mixer Integrating Quadrature Signal Generator

Systematic Design of 7‐to‐40‐ghz On‐chip Mixer Based on Optimal Impedance Deviation Coefficient