P2–28: Evaluation of Simplified Simulation Approach for Thin-Film Type Gated Field-Emitter

Jie Luo,Jun Chen,S. Z. Deng,Ning Xu
DOI: https://doi.org/10.1109/ivnc.2010.5563139
2010-01-01
Abstract:A simplified simulation approach has been introduced for gated field emitters. F-N equation fitted with experimental field emission characteristic is used to calculate the characteristics of a double-gated field emitters. By assuming the cathode is a flat thin film, the anode current and gate current are simulated. The validity of the simulation is evaluated by experimental results.
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