Abstract:By establishing the function between input current and resonant current, the voltage gain model of the converter is obtained according to the power conservation. Moreover, considering the parasitic capacitance charge and resonant current commutation time, the condition for soft switching is derived. Furthermore, the piecewise proportional integral (PI) controller is adopted, so that the converter has excellent dynamic performance in both modes. An experimental prototype with 200–340 V input and 28 V/1 kW output was built based. The peak efficiency was 97.82%. The voltage gain range of LLC converter can be effectively broadened by using the hybrid modulation of phase‐shift modulation (PSM) and pulse frequency modulation (PFM). However, the harmonic of resonant tank increases dramatically in PSM mode, and the first harmonic approximation is no longer suitable for solving the voltage gain. Moreover, the conditions for soft switching in PSM mode are not clear. Meanwhile, the small‐signal models of the converter in different modulation modes are quite different, and it is difficult for a fixed controller to ensure a good dynamic performance of the converter in both modulation modes. To address above issues, a voltage gain modeling method of PSM mode LLC converter is proposed. By establishing the function between input current and resonant current, the voltage gain model of the converter is obtained according to the power conservation. Moreover, considering the parasitic capacitance charge and resonant current commutation time, the condition for soft switching is derived. Furthermore, a control strategy of LLC converter in hybrid modulation is proposed. The piecewise proportional integral (PI) controller is adopted, and the parameters of the controller are dynamically adjusted with the modulation mode, so that the converter has excellent dynamic performance in both modes. And the hysteresis control is used to ensure the stability of mode switching. An experimental prototype with 200–340 V input and 28 V/1 kW output was built based on gallium nitride (GaN) devices. The peak efficiency was 97.82%, and the power density was 65.76 w/in3.

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