Transistor Compact Model Based On Gradient Constrainted Convolution Neural Network

Zijia Zhang,Yiyang Tao,Dan Niu,Bowen Zhou,Lang Zeng,Hongwei Zhou,Lining Zhang
DOI: https://doi.org/10.1109/ISEDA59274.2023.10218711
2023-01-01
Abstract:In semiconductor research, the characteristic curves of analog devices under different combinations of process and device structure parameters are very important. Traditional TCAD simulation plays a very important role, but building a compact model based on quantum physics requires a lot of effort and time, and shows relatively weak technical adaptability. The derivative of the model output may also lose continuity. In order to solve these problems, this work proposes a gradient supervised convolution neural network model with adaptive dynamic adjustment of learning rate. It is employed to model the I-V characteristics of GAA and PLANAR devices and achieves the continuity of higher-order derivatives. In addition, this work designs effective data preprocessing and new weighted loss function to enhance model expressivity. The I-V curves and physical verification of GAA and PLANAR devices by the proposed model show that the model can obtain high-precision fitting and achieve high-order differentiable continuity.
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