Dirac-source Diode with Sub-Unity Ideality Factor
Gyuho Myeong,Wongil Shin,Kyunghwan Sung,Seungho Kim,Hongsik Lim,Boram Kim,Taehyeok Jin,Jihoon Park,Taehun Lee,Michael S. Fuhrer,Kenji Watanabe,Takashi Taniguchi,Fei Liu,Sungjae Cho
DOI: https://doi.org/10.1038/s41467-022-31849-5
IF: 16.6
2022-01-01
Nature Communications
Abstract:An increase in power consumption necessitates a low-power circuit technology to extend Moore's law. Low-power transistors, such as tunnel field-effect transistors (TFETs), negative-capacitance field-effect transistors (NC-FETs), and Dirac-source field-effect transistors (DS-FETs), have been realised to break the thermionic limit of the subthreshold swing (SS). However, a low-power diode rectifier, which breaks the thermionic limit of an ideality factor (n) of 1 at room temperature, has not been proposed yet. In this study, we have realised a DS Schottky diode, which exhibits a steep-slope characteristic curve, by utilising the linear density of states (DOSs) of graphene. For the developed DS Schottky diode, n<1 for more than two decades of drain current with a minimum value of 0.8, and the rectifying ratio is large (100000). The realisation of a DS Schottky diode paves the way for the development of low-power electronic circuits.