Epitaxial growth, structural characterization and exchange bias of non-collinear antiferromagnetic Mn$_{3}$Ir thin films
James M. Taylor,Edouard Lesne,Anastasios Markou,Fasil Kidane Dejene,Benedikt Ernst,Adel Kalache,Kumari Gaurav Rana,Neeraj Kumar,Peter Werner,Claudia Felser,Stuart S. P. Parkin
DOI: https://doi.org/10.1103/PhysRevMaterials.3.074409
2019-03-13
Abstract:Antiferromagnetic materials are of great interest for spintronics. Here we present a comprehensive study of the growth, structural characterization, and resulting magnetic properties of thin films of the non-collinear antiferromagnet Mn$_{3}$Ir. Using epitaxial engineering on MgO (001) and Al$_{2}$O$_{3}$ (0001) single crystal substrates, we control the growth of cubic ${\gamma}$-Mn$_{3}$Ir in both (001) and (111) crystal orientations, and discuss the optimization of growth conditions to achieve high-quality crystal structures with low surface roughness. Exchange bias is studied in bilayers, with exchange bias fields as large as -29 mT (equivalent to a unidirectional anisotropy constant of 11.5 nJ cm$^{-2}$) measured in Mn$_{3}$Ir (111) / permalloy heterostructures at room temperature. In addition, a distinct dependence of blocking temperature on in-plane crystallographic direction in Mn$_{3}$Ir (001) / Py bilayers is observed. These findings are discussed in the context of chiral antiferromagnetic domain structures, and will inform progress towards topological antiferromagnetic spintronic devices.
Materials Science,Mesoscale and Nanoscale Physics