Abstract:Extraction of hot carriers (HCs) over the band-edge is a key to harvest solar energy beyond Shockley-Queisser limit1. Graphene is known as a HC-layered material due to phonon bottleneck effect near Dirac point, but limited by low photocarrier density2. Graphene/transition metal dichalcogenide (TMD) heterostructures circumvent this issue by ultrafast carrier transfer from TMD to graphene2,3. Nevertheless, efficient extraction of photocurrent by means of HCs together with carrier multiplication (CM) is still missing. Here, we introduce an ultrathin broadband resonant tunneling (BRT) barrier, TiOX to efficiently extract photocurrent with simultaneous CM and HC measurements in MoS2/graphene/TiOX heterostructure. The BRT layer gives rise to boosting open circuit voltage which is linearly proportional to incident photon energy. Meanwhile, short circuit current rises rapidly over 2Eg with obvious CM feature. This was explained by defining the joint density of states between graphene and TiOX layer over positive and negative voltage. The broadband resonant tunneling states inherently constructed from oxidation states varying from Ti3+ to Ti4+ allow the ultrafast HCs to efficiently transfer from graphene to TiOX layer. We find that the number of available tunneling states is directly proportional to short circuit current, which is well corroborated with TiOX and MoS2 thickness variance. We obtained an optimum thickness of BRT layer of ~2.8 nm, yielding cascade open circuit voltage as high as ~0.7 V, two orders of magnitude higher than that without BRT layer to reach a record efficiency of 5.3% with improved fill factor owing to synergistic HC and CM conversion under 1-SUN with long-term stability.

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