Multi‐Carrier Generation in Organic‐Passivated Black Silicon Solar Cells with Industrially Feasible Processes
Xin Zhou,Lu Wan,Han Li,Xueliang Yang,Jingwei Chen,Kunpeng Ge,Jun Yan,Cuili Zhang,Qing Gao,Xuning Zhang,Jianxin Guo,Feng Li,Jianming Wang,Dengyuan Song,Shufang Wang,Benjamin S. Flavel,Jianhui Chen
DOI: https://doi.org/10.1002/smll.202205848
IF: 13.3
2022-12-25
Small
Abstract:An inverse Auger multiple carrier generation is achieved by the infiltration of an organic passivation agent into nanostructuring of silicon, and an external quantum efficiency that is >100% is reported. The approaches are shown to match perfectly with existing solution‐based processing of the metal‐assisted chemical etching black silicon. The innate inverse Auger effect within bulk silicon can result in multiple carrier generation. Observation of this effect is reliant upon low high‐energy photon reflectance and high‐quality surface passivation. In the photovoltaics industry, metal‐assisted chemical etching (MACE) to afford black silicon (b‐Si) can provide a low high‐energy photon reflectance. However, an industrially feasible and cheaper technology to conformally passivate the outer‐shell defects of these nanowires is currently lacking. Here, a technology is introduced to infiltrate black silicon nanopores with a simple and vacuum‐free organic passivation layer that affords millisecond‐level minority carrier lifetimes and matches perfectly with existing solution‐based processing of the MACE black silicon. Advancements such as the demonstration of an excellent passivation effect whilst also being low reflectance provide a new technological route for inverse Auger multiple carrier generation and an industrially feasible technical scheme for the development of the MACE b‐Si solar cells.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology